Bizarre Patents
Behavior Modification Wristwatch
A wristwatch including a watch band and a watch body having an octagon shaped perimeter and being red in color and having the word STOP thereon to resemble a stop sign.
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| Number | Title | Issue Date |
| 8183154 | Selective metal deposition over dielectric layers Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow ... | 05/22/2012 |
| 8143161 | Method for passivating hardware of a microelectronic topography processing chamber An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectron... | 03/27/2012 |
| 8076241 | Methods for multi-step copper plating on a continuous ruthenium film in recessed features Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-... | 12/13/2011 |
| 8076240 | Techniques to improve characteristics of processed semiconductor substrates Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate afte... | 12/13/2011 |
| 8058171 | Stirring apparatus for combinatorial processing An apparatus and system for stirring liquid inside a flow cell. In one implementation, the apparatus includes a rotatable disc configured to receive liquid at a top side of the disc and distribute the liquid substantially evenly around a periphery of the flow cell. ... | 11/15/2011 |
| 8043966 | Method for monitoring patterning integrity of etched openings and forming conductive structures with the openings Disclosed are embodiments of a method that both monitors patterning integrity of etched openings (i.e., ensures that lithographically patterned and etched openings are complete) and forms on-chip conductive structures (e.g., contacts, interconnects, fuses, anti-fuse... | 10/25/2011 |
| 8043967 | Process for through silicon via filling A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that abou... | 10/25/2011 |
| 8003534 | Method of forming semiconductor devices in wafer assembly An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is conn... | 08/23/2011 |
| 7989347 | Process for filling recessed features in a dielectric substrate A process for filling recessed features of a dielectric substrate for a semiconductor device, comprises the steps (a) providing a dielectric substrate having a recessed feature in a surface thereof, wherein the smallest dimension (width) across said feature is less ... | 08/02/2011 |
| 7968462 | Noble metal activation layer Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion... | 06/28/2011 |
| 7955977 | Method of light induced plating on semiconductors Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit n... | 06/07/2011 |
| 7935631 | Method of forming a continuous layer of a first metal selectively on a second metal and an integrated circuit formed from the method A cap layer for a metal feature such as a copper interconnect on a semiconductor wafer is formed by immersion plating a more noble metal (e.g. Pd) onto the copper interconnect and breaking up, preferably by mechanical abrasion, loose nodules of the noble metal that ... | 05/03/2011 |
| 7919412 | Over-passivation process of forming polymer layer over IC chip A method for forming a semiconductor chip or wafer includes following steps. A semiconductor substrate is provided, and then a polymer layer is deposited over the semiconductor substrate, wherein the polymer layer comprises polyimide. The polymer layer with a temper... | 04/05/2011 |
| 7884017 | Thermal methods for cleaning post-CMP wafers Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in... | 02/08/2011 |
| 7875554 | Method for electroless depositing a material on a surface of a wafer Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution.... | 01/25/2011 |
| 7846838 | Method for producing an electronic component The invention relates to a method for producing an electronic component on a surface of a substrate with the electronic component having, seen at right angles to the surface of the substrate, at least two electrical functional layers which are arranged one above the... | 12/07/2010 |
| 7807572 | Micropad formation for a semiconductor A method forms a micropad to an external contact of a first semiconductor device. A stud of copper is formed over the external contact. The stud extends above a surface of the first semiconductor device. The stud of copper is immersed in a solution of tin. The tin r... | 10/05/2010 |
| 7795143 | Substrate processing apparatus and manufacturing method of semiconductor device A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the o... | 09/14/2010 |
| 7776741 | Process for through silicon via filing A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that abou... | 08/17/2010 |
| 7732330 | Semiconductor device and manufacturing method using an ink-jet method of the same The manufacturing method of the present invention includes steps of selectively forming a photocatalyst material or a material including an amino group by discharging a composition including the photocatalyst material or the material including an amino group; immers... | 06/08/2010 |
| 7718531 | Method for forming catalyst nanoparticles for growing elongated nanostructures Preferred embodiments provide a method for forming at least one catalyst nanoparticle on at least one sidewall of a three-dimensional structure on a main surface of a substrate, the main surface lying in a plane and the sidewall of the three-dimensional structure ly... | 05/18/2010 |
| 7709382 | Electroprocessing profile control Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the subst... | 05/04/2010 |
| 7700485 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 04/20/2010 |
| 7659203 | Electroless deposition process on a silicon contact Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an ... | 02/09/2010 |
| 7655565 | Electroprocessing profile control A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, a... | 02/02/2010 |
| 7655566 | Method for manufacturing semiconductor device A semiconductor device is manufactured by forming a gate electrode layer over a substrate having a light transmitting property; forming a gate insulating layer over the gate electrode layer; forming a photocatalyst material over the gate insulating layer; immersing ... | 02/02/2010 |
| 7648913 | Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth A film formation method is provided which includes positioning an object within an electroless deposition apparatus having means for instantaneous temperature control of the object and electrolessly depositing a material upon the object. More specifically, the metho... | 01/19/2010 |
| 7638431 | Composite nanostructure apparatus and method A metal is deposited onto a surface electrochemically using a deposition solution including a metal salt. In making a composite nanostructure, the solution further includes an enhancer that promotes electrochemical deposition of the metal on the nanostructure. In a ... | 12/29/2009 |
| 7615491 | Defectivity and process control of electroless deposition in microelectronics applications Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions. ... | 11/10/2009 |
| 7611987 | Defectivity and process control of electroless deposition in microelectronics applications Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions. ... | 11/03/2009 |
| 7611988 | Defectivity and process control of electroless deposition in microelectronics applications Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions. ... | 11/03/2009 |
| 7605082 | Capping before barrier-removal IC fabrication method Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed... | 10/20/2009 |
| 7595268 | Semiconductor package having re-distribution lines for supplying power and a method for manufacturing the same A semiconductor package and a method for manufacturing the same capable of supplying power easily without an increase in the number of pads for power supply. The semiconductor package includes a semiconductor chip having a plurality of pads including pads for power ... | 09/29/2009 |
| 7585768 | Combined copper plating method to improve gap fill A method of filling gaps in dielectric layers is disclosed. A wafer is provided having a dielectric layer containing gaps to be filled with copper, some of the gaps, denoted deeper gaps, having aspect ratios so large that filling these gaps with copper using ECP cou... | 09/08/2009 |
| 7579275 | Electric plating method, electric plating apparatus, program for plating, recording medium, and manufacturing method and manufacturing apparatus for semiconductor device In electric plating of supplying a current between an anode electrode and a cathode electrode as a plated body immersed in a plating solution thereby forming a plated film comprising a conductor on a surface of the cathode electrode, a preliminary electrolytic elect... | 08/25/2009 |
| 7521360 | Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby A through hole (114) is formed in a wafer (104) comprising a semiconductor substrate (110). A seed layer (610) is sputtered on the bottom surface of the wafer. The seed is not deposited over the through hole's sidewalls adjacent the top s... | 04/21/2009 |
| 7521361 | Method for manufacturing wiring substrate A method for manufacturing a wiring substrate by an electroless plating method that precipitates metal without using a plating resist is provided. The method includes the steps of: (a) providing a catalyst layer having a predetermined pattern on a substrate; (b) dip... | 04/21/2009 |
| 7498261 | Method and apparatus for forming metal film A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having em... | 03/03/2009 |
| 7476616 | Reagent activator for electroless plating A method for electroless plating of a substrate is provided that comprises exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material to form an activated electroless plating reagent p... | 01/13/2009 |
| 7473642 | Method for fabricating conductive layer A method for fabricating a conductive layer is provided. First, a substrate is provided and a patterned adhesion layer is formed on the substrate. Next, a chemical plating process is performed to form a first metal layer on the patterned adhesion layer by placing th... | 01/06/2009 |
