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| Number | Title | Issue Date |
| 8110502 | Method of improving adhesion strength of low dielectric constant layers A method for manufacturing a semiconductor device is provided. In a specific embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. Additionally... | 02/07/2012 |
| 8110503 | Surface preparation for thin film growth by enhanced nucleation Various processes and related systems are provided for making structures on substrate surfaces. Disclosed are methods of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving ... | 02/07/2012 |
| 8105945 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a do... | 01/31/2012 |
| 8058170 | Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the de... | 11/15/2011 |
| 8012875 | Method and apparatus for workpiece surface modification for selective material deposition In some embodiments, a workpiece-surface-influencing device preferentially contacts the top surface of the workpiece, to chemically modify the surface at desired field areas of the workpiece without affecting the surfaces of cavities or recesses in the field areas. ... | 09/06/2011 |
| 7919411 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a do... | 04/05/2011 |
| 7863190 | Method of selective coverage of high aspect ratio structures with a conformal film Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a ... | 01/04/2011 |
| 7842612 | Selective formation of a compound comprising a semi-conducting material and a metallic material in a substrate through a germanium oxide layer An area made from a compound of a metallic material and semi-conducting material is produced selectively in a substrate made from semi-conducting material by previously forming a germanium oxide layer with a thickness comprised between 3 nm and 5 nm over a predefine... | 11/30/2010 |
| 7842613 | Methods of forming microelectronic packaging substrates having through-substrate vias therein Methods of forming a substrate for microelectronic packaging may include electroplating a metal seed layer onto a sidewall of a trench extending through the substrate. The sidewall may be patterned to have at least one slot therein that extends through the substrate... | 11/30/2010 |
| 7807571 | Semiconductor device and methods of forming the same An example embodiment provides a method of forming a conductive pattern in a semiconductor device. The method includes forming one or more dielectric layers over a first conductive pattern formed on a substrate; forming an opening in the one or more dielectric layer... | 10/05/2010 |
| 7741219 | Method for manufacturing a semiconductor device using the self aligned contact (SAC) process flow for semiconductor devices with aluminum metal gates In one embodiment, a method, comprises forming a diffusion layer on a semiconductor substrate, forming a selectively deposited metal or metal alloy on an aluminum gate structure by removing an aluminum oxide layer from the aluminum gate structure and depositing a zi... | 06/22/2010 |
| 7732329 | Method and apparatus for workpiece surface modification for selective material deposition In some embodiments, a workpiece-surface-influencing device preferentially contacts the top surface of the workpiece, to chemically modify the surface at desired field areas of the workpiece without affecting the surfaces of cavities or recesses in the field areas. ... | 06/08/2010 |
| 7696091 | Method of forming a silicon layer and method of manufacturing a display substrate by using the same A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF... | 04/13/2010 |
| 7696090 | Rectifying diodes with self-aligned electrodes A rectifying diode comprising a semiconducting layer, a first electrode, and a second electrode, wherein the width of the region of closest contact between the two electrodes is on the order of the thickness of the semiconducting layer. ... | 04/13/2010 |
| 7625820 | Method of selective coverage of high aspect ratio structures with a conformal film Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a ... | 12/01/2009 |
| 7598171 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate 1 to form a first impurity region, introducing... | 10/06/2009 |
| 7592254 | Methods for coating and filling high aspect ratio recessed features The present invention provides methods for conformally or superconformally coating and/or uniformly filling structures with a continuous, conformal layer or superconformal layer. Methods of the present invention improve conformal or superconformal coverage of surfac... | 09/22/2009 |
| 7544614 | Method of forming a coated film, method of forming an electronic device, and method of manufacturing an electron emission element A slit forming process with respect to a coated film, includes: forming a step pattern having an end part on a substrate; coating a liquid material for forming a coated film on the substrate in the manner of coveri... | 06/09/2009 |
| 7534724 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a do... | 05/19/2009 |
| 7494926 | Method for forming highly conductive metal pattern on flexible substrate and EMI filter using metal pattern formed by the method Disclosed herein is a method for forming a highly conductive metal pattern which comprises forming a metal pattern on a substrate by the use of a photocatalyst and a selective electroless or electroplating process, and transferring the metal pattern to a flexible pl... | 02/24/2009 |
| 7452810 | Method of forming a barrier layer of a semiconductor device A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H2) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H2 | 11/18/2008 |
| 7416975 | Method of forming contact layers on substrates A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined re... | 08/26/2008 |
| 7405146 | Electroplating method by transmitting electric current from a ball side An electroplating method by transmitting electric current from a ball side is provided. In the electroplating method, the circuit layer is firstly formed on the bump side of the IC board, and the electric current is transmitted to the portion of the circuit layer un... | 07/29/2008 |
| 7405158 | Methods for depositing tungsten layers employing atomic layer deposition techniques In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process fo... | 07/29/2008 |
| 7405157 | Methods for the electrochemical deposition of copper onto a barrier layer of a work piece Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate d... | 07/29/2008 |
| 7393782 | Process for producing layer structures for signal distribution Structures for signal distribution are produced by applying a metallic seed layer over a semiconductor body. An insulating layer is applied over the metallic seed layer and openings in the insulating layer are produced by photolithographic patterning of the insulati... | 07/01/2008 |
| 7375024 | Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature The present invention relates to a method for fabricating a metal interconnection line with use of a barrier metal layer formed in a low temperature. The method includes the steps of: forming an inter-layer insulation layer on a substrate; etching predetermined regi... | 05/20/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
| 7368383 | Hillock reduction in copper films A method for treating a copper surface of a semiconductor device provides exposing the copper surface to a citric acid solution after the surface is formed using CMP (chemical mechanical polishing) or other methods. The citric acid treatment may take place during a ... | 05/06/2008 |
| 7358554 | Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane st... | 04/15/2008 |
| 7358185 | Device having contact pad with a conductive layer and a conductive passivation layer A method and apparatus is disclosed for sequential processing of integrated circuits, particularly for conductively passivating a contact pad with a material which resists formation of resistive oxides. In particular, a tank is divided into three compartments, each ... | 04/15/2008 |
| 7351656 | Semiconductor device having oxidized metal film and manufacture method of the same A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in ... | 04/01/2008 |
| 7341947 | Methods of forming metal-containing films over surfaces of semiconductor substrates The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least o... | 03/11/2008 |
| 7341943 | Post etch copper cleaning using dry plasma A method for post-etch copper cleaning uses a hydrogen plasma with a trace gas additive constituting about 3-10 percent of the plasma by volume to clean a copper surface exposed by etching. The trace gas may be atomic nitrogen or other species having an atomic mass ... | 03/11/2008 |
| 7341942 | Method for forming metal line of semiconductor device A method for forming a metal line of a semiconductor device forms an aluminum line having an excellent orientation. A specific resistance of a metal line is reduced, thereby enabling sufficient supply of a desired electric current. The method includes steps of formi... | 03/11/2008 |
| 7335594 | Method for manufacturing a memory device having a nanocrystal charge storage region A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. An absorption layer is formed on the first layer of dielectric material. The a... | 02/26/2008 |
| 7335591 | Method for forming three-dimensional structures on a substrate A method of forming a resist layer on a non-planar surface of a substrate includes placing the non-planar surface into an electrophoretic resist. While the non-planar surface is in the electrophoretic resist, an electrical voltage is applied between the substrate an... | 02/26/2008 |
| 7335586 | Sealing porous dielectric material using plasma-induced surface polymerization A method for sealing a porous dielectric layer atop a substrate, wherein the dielectric layer is patterned to form at least a trench and at least a via, comprises applying a first plasma to a surface of the dielectric layer to silanolize the surface, treating the su... | 02/26/2008 |
| 7332432 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a do... | 02/19/2008 |
| 7323411 | Method of selective tungsten deposition on a silicon surface In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on a silicon surface. The silane pre-flow helps minimize silicon consump... | 01/29/2008 |
