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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 8173545 | Method for the fabrication of a transistor gate using at least one electron beam A microelectronic method for the fabrication of a transistor gate using a precursor material that is suitable for being broken down into at least one metallic material after having been exposed to an electron beam. The invention applies in particular to the fabricat... | 05/08/2012 |
| 7855147 | Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer Copper seed layers are formed on diffusion barrier layers (e.g., on Ta, and TaNx layers) without significant agglomeration of copper, with the use of an engineered barrier layer/seed layer interface. The engineered interface includes an adhesion layer, in... | 12/21/2010 |
| 7829463 | Plasma processing method and plasma processing apparatus A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second el... | 11/09/2010 |
| 7786009 | Universal connector assembly and method of manufacturing An advanced modular plug connector assembly incorporating an insert assembly disposed in the rear portion of the connector housing. In one embodiment, the connector has a plurality of ports in multi-row configuration, and the insert assembly includes a substrate ada... | 08/31/2010 |
| 7579274 | Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices. According to the invention, this method comprises: pro... | 08/25/2009 |
| 7482273 | Transmissive dynamic plasma steering method for radiant electromagnetic energy Radiant electromagnetic energy beam steering method achieved following antenna conversion from electrical current and voltage characterized signals to radiant wave characterized signals by way of the influence of gaseous plasma of controlled plasma density and elect... | 01/27/2009 |
| 7442634 | Method for constructing contact formations According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metall... | 10/28/2008 |
| 7442615 | Semiconductor processing system and method Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid ... | 10/28/2008 |
| 7439192 | Method of forming a layer on a semiconductor substrate In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a fi... | 10/21/2008 |
| 7410380 | Voice and data telecommunications connector The present voice and data telecommunications connector includes a set of wires each having a first end terminating in a first 50-pin amphenol connector for connecting to a 50-pin amphenol socket of a converged voice and data telecommunications device; a first group... | 08/12/2008 |
| 7399705 | Method for producing a local coating and combinatory substrate having such coating A method for producing at least one local coating on a substrate is provided, as well as a combinatory substrate having such a local coating, a mask that is removable in a non-destructive manner being arranged on the substrate in a first step; the mask having at lea... | 07/15/2008 |
| 7368379 | Multi-layer interconnect structure for semiconductor devices An interconnect structure for a semiconductor device and its method of manufacture is provided. The interconnect structure includes a multi-layer structure having one or more stress-relief layers. In an embodiment, stress-relief layers are positioned between layers ... | 05/06/2008 |
| 7365484 | Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device A patterned substrate includes a base layer; a droplet holding space surrounded by a barrier that is formed over the base layer; and a pattern formed by discharging droplets containing a pattern formation material into the droplet holding space surrounded by the bar... | 04/29/2008 |
| 7365008 | Pattern forming method, device, method of manufacture thereof, electro-optical apparatus, and electronic apparatus A method of forming a predetermined pattern by disposing a functional liquid on a substrate, the method includes the steps of forming banks on the substrate, and disposing the functional liquid on a region divided by the banks, wherein a width of the region is parti... | 04/29/2008 |
| 7365289 | Production of nanostructures by curie point induction heating An apparatus for synthesizing nanostructures. In one embodiment, the apparatus includes a heating device that defines a reaction zone therein and a susceptor made of a ferromagnetic material with a Curie temperature and placed in the reaction zone, where the Curie t... | 04/29/2008 |
| 7358169 | Laser-assisted deposition A method is provided for depositing a patterning material onto an optically transparent substrate by the use of a laser beam. A solid layer of a patterning material is placed adjacent to a receiving surface of the substrate. A laser beam is directed at an incident a... | 04/15/2008 |
| 7329612 | Semiconductor device and process for producing the same A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 | 02/12/2008 |
| 7316974 | Wiring pattern formation method, manufacturing method for multi layer wiring substrate, and electronic device A wiring pattern formation method in which a wiring pattern is formed by arranging, in a region which is demarcated by a partition wall, liquid material which includes an electrically conductive material, including: arranging a resin material around the periphery of... | 01/08/2008 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7288772 | Diagnostic system for profiling micro-beams An apparatus for characterization of a micro beam comprising a micro modified Faraday cup assembly including a first layer of material, a second layer of material operatively connected to the first layer of material, a third layer of material operatively connected t... | 10/30/2007 |
| 7288466 | Processing method, manufacturing method of semiconductor device, and processing apparatus A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed... | 10/30/2007 |
| 7285496 | Hardening of copper to improve copper CMP performance A method for reducing the topography from CMP of metal layers during the semiconductor manufacturing process is described. Small amounts of solute are introduced into the conductive metal layer before polishing, resulting in a material with electrical conductivity a... | 10/23/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7273823 | Situ oxide cap layer development A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is depos... | 09/25/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7268077 | Carbon nanotube reinforced metallic layer A method and apparatus including an interconnect structure having a surface, a plurality of nanotubes disposed adjacent to the surface, and a metallic layer disposed adjacent to the surface and substantially including the nanotubes. An assembly may include a first e... | 09/11/2007 |
| 7262106 | Absorber layer for DSA processing A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient... | 08/28/2007 |
| 7259101 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7259100 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7256123 | Method of forming an interface for a semiconductor device In a semiconductor device using a polysilicon contact, such as a poly plug between a transistor and a capacitor in a container cell, an interface is provided where the poly plug would otherwise contact the bottom plate of the capacitor. The interface bars silicon fr... | 08/14/2007 |
| 7253079 | Coplanar mounting member for a MEM sensor A coplanar mounting member for a MEM sensor includes a first surface coplanar with a connection pad on the surface of a MEM sensor board containing the MEM sensor control circuit; a second surface inclined to the surface of the board for mounting a MEM sensor and an... | 08/07/2007 |
| 7238629 | Deposition method, method of manufacturing semiconductor device, and semiconductor device The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic... | 07/03/2007 |
| 7239747 | Method and system for locating position in printed texts and delivering multimedia information Apparatus and methods are disclosed for processing printed material to provide an index of locations within the printed material that can be associated with external actions such as displaying a graphical image, providing an audio or video output, or providing a mul... | 07/03/2007 |
| 7232751 | Semiconductor device and manufacturing method therefor According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced ... | 06/19/2007 |
| 7224708 | Focused ion beam heater thermally tunable laser Platinum (Pt) thin film heaters are deposited by a focused ion beam for semiconductor manufacturing of thermally tunable distributed feedback lasers. An exemplar 1.3 μm InGaAsP/InP laser is integrated with a tuning element having a wide wavelength tuning range of 4... | 05/29/2007 |
| 7217995 | Apparatus for stacking electrical components using insulated and interconnecting via An efficient chip stacking structure is described that includes a leadframe having two surfaces to each of which can be attached stacks of chips. A chip stack can be formed by placing a chip active surface on a back surface of another chip. Electrical connections be... | 05/15/2007 |
| 7214617 | Method of forming thin film pattern, method of manufacturing device, electro-optical apparatus and electronic apparatus A method of forming a thin film pattern by placing a functional liquid on a substrate, includes a bank formation step of forming banks in accordance with the thin film pattern on the substrate, a residue processing step of removing residue between the banks, and a m... | 05/08/2007 |
| 7214618 | Technique for high efficiency metalorganic chemical vapor deposition A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced int... | 05/08/2007 |
| 7211805 | Liquid metal ion gun An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour s... | 05/01/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
