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| Number | Title | Issue Date |
| 8110499 | Method of forming a contact structure An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal la... | 02/07/2012 |
| 8062973 | Semiconductor device manufacturing method A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silic... | 11/22/2011 |
| 8058167 | Dynamic Schottky barrier MOSFET device and method of manufacture A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device inclu... | 11/15/2011 |
| 7989344 | Method for forming a nickelsilicide FUSI gate Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in ... | 08/02/2011 |
| 7981795 | Semiconductor device manufacturing method A semiconductor device manufacturing method has forming a metal film containing platinum by depositing a metal on a source/drain diffusion layer primarily made of silicon formed on a semiconductor substrate and on a device isolation insulating film; forming a silici... | 07/19/2011 |
| 7972958 | Method of fabricating semiconductor device Provided is a method of fabricating a semiconductor device including a dual silicide process. The method may include sequentially siliciding and stressing a first MOS region, and sequentially siliciding and stressing a second MOS region after siliciding and stressin... | 07/05/2011 |
| 7943512 | Method for fabricating metal silicide A method for fabricating a metal silicide film is described. After providing a silicon material layer, a metal alloy layer is formed to cover the silicon material layer. A thermal process is performed to form a metal alloy silicide layer in a self-aligned way. A wet... | 05/17/2011 |
| 7888264 | MOSFET structure with multiple self-aligned silicide contacts A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field eff... | 02/15/2011 |
| 7829461 | Method for fabricating semiconductor device A semiconductor device fabrication method by which the thermal stability of nickel silicide can be improved. Nickel (or a nickel alloy) is formed over a semiconductor substrate on which a gate region, a source region, and a drain region are formed. Dinickel silicide... | 11/09/2010 |
| 7816261 | MOSFETS comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions. Specifically, each MOSFET comprises source and drain regions located in a semi... | 10/19/2010 |
| 7749898 | Silicide interconnect structure A method for forming an interconnect structure includes forming a dielectric layer above a first layer having a conductive region defined therein. An opening is defined in the dielectric layer to expose at least a portion of the conductive region. A metal silicide i... | 07/06/2010 |
| 7737032 | MOSFET structure with multiple self-aligned silicide contacts A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field eff... | 06/15/2010 |
| 7709380 | Method for gate electrode height control One inventive aspect relates to a method of controlling the gate electrode in a silicidation process. The method comprises applying a sacrificial cap layer on top of each of at least one gate electrode, each of the at least one gate electrode deposited with a given ... | 05/04/2010 |
| 7687396 | Method of forming silicided gates using buried metal layers A method comprises forming a gate stack comprising a polysilicon layer, a metal layer and a polysilicon layer over a gate dielectric and substrate. The metal layer is buried inside the gate stack to alloy the silicon and metal at the bottom of the gate. The gate sta... | 03/30/2010 |
| 7682971 | Semiconductor device and method for manufacturing the same Provided is a method for manufacturing a semiconductor device. In the method, a gate oxide layer, a gate polysilicon layer, and a capping oxide layer are sequentially formed on a semiconductor substrate. A photoresist pattern is formed on the capping oxide layer. Th... | 03/23/2010 |
| 7678694 | Method for fabricating semiconductor device with silicided gate A method for fabricating a semiconductor device having a silicided gate that is directed to forming the silicided structures while maintaining gate-dielectric integrity. Initially, a gate structure has, preferably, a poly gate electrode separated from a substrate by... | 03/16/2010 |
| 7659199 | Air break for improved silicide formation with composite caps Disclosed is a structure and method for tuning silicide stress and, particularly, for developing a tensile silicide region on a gate conductor of an n-FET in order to optimize n-FET performance. More particularly, a first metal layer-protective cap layer-second meta... | 02/09/2010 |
| 7569483 | Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus Methods of forming metal silicide layers include a convection-based annealing step to convert a metal layer into a metal silicide layer. These methods may include forming a silicon layer on a substrate and forming a metal layer (e.g., nickel layer) in direct contact... | 08/04/2009 |
| 7517795 | Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the ... | 04/14/2009 |
| 7419905 | Gate electrodes and the formation thereof A method of fabricating a gate electrode for a semiconductor comprising the steps of: providing a substrate; providing on the substrate a layer of a first material of thickness tp, the first material being selected from the group consisting of Si, Si... | 09/02/2008 |
| 7417290 | Air break for improved silicide formation with composite caps Disclosed is a structure and method for tuning silicide stress and, particularly, for developing a tensile silicide region on a gate conductor of an n-FET in order to optimize n-FET performance. More particularly, a first metal layer-protective cap layer-second meta... | 08/26/2008 |
| 7396764 | Manufacturing method for forming all regions of the gate electrode silicided The technology which can improve the performance of a MOS transistor in which all the regions of the gate electrode were silicided is offered. A gate insulating film and a gate electrode of an nMOS transistor are laminated and formed in this order on a semico... | 07/08/2008 |
| 7390729 | Method of fabricating a semiconductor device A method of fabricating semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively fo... | 06/24/2008 |
| 7361597 | Semiconductor device and method of fabricating the same A semiconductor device incorporating an alloy layer formed on a substrate; a gate electrode, a source electrode, and a drain electrode formed on the alloy layer at predetermined intervals therebetween; a gate insulating layer formed on the gate electrode in a gate e... | 04/22/2008 |
| 7354868 | Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform c... | 04/08/2008 |
| 7348230 | Manufacturing method of semiconductor device A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source... | 03/25/2008 |
| 7344983 | Clustered surface preparation for silicide and metal contacts A cluster tool is provided for the implementing of a clustered and integrated surface pre-cleaning of the surface of semiconductor devices. More particularly, there is provided a cluster tool and a method of utilization thereof in an integrated semiconductor device ... | 03/18/2008 |
| 7344978 | Fabrication method of semiconductor device A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over th... | 03/18/2008 |
| 7344984 | Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors A method and a semiconductor device are provided in which respective contact layers having a specific intrinsic stress may be directly formed on respective metal silicide regions without undue metal silicide degradation during an etch process for removing an unwante... | 03/18/2008 |
| 7341933 | Method for manufacturing a silicided gate electrode using a buffer layer The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes providing a capped polysilicon gate electrode ( | 03/11/2008 |
| 7338888 | Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device (100), among other possible steps, ... | 03/04/2008 |
| 7329604 | Semiconductor device and method for fabricating the same The method for fabricating a semiconductor device comprises the step of forming a Co film 72 on a gate electrode 30 having a gate length Lg of below 50 nm including 50 nm; the first thermal processing step of making thermal processing to rea... | 02/12/2008 |
| 7326622 | Method of manufacturing semiconductor MOS transistor device A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate having a main surface is prepared. A gate dielectric layer is formed on the main surface. A gate electrode is patterned on the gate dielectric layer... | 02/05/2008 |
| 7326644 | Semiconductor device and method of fabricating the same A method of fabricating a semiconductor device, includes (a) forming an oxide film entirely over a silicon substrate on which a MOS transistor is fabricated, (b) carrying out first thermal-annealing to the silicon substrate, (c) removing the oxide film in an area wh... | 02/05/2008 |
| 7320939 | Semiconductor device fabricated by a method of reducing the contact resistance of the connection regions A semiconductor device, fabricated by a method, having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate is disclosed. In one embodiment, the method includes i) forming, at least at the s... | 01/22/2008 |
| 7320938 | Method for reducing dendrite formation in nickel silicon salicide processes A method for reducing dendrite formation in a self-aligned, silicide process for a semiconductor device includes forming a silicide metal layer over a semiconductor substrate, the semiconductor device having one or more diffusion regions, one or more isolation areas... | 01/22/2008 |
| 7307322 | Ultra-uniform silicide system in integrated circuit technology A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform su... | 12/11/2007 |
| 7303990 | Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device A nickel-silicon compound forming method is disclosed which comprises forming nickel on at least one of only silicon and a compound containing silicon, and performing stepwise-heating of the nickel together with the at least one of only silicon and the compound cont... | 12/04/2007 |
| 7294570 | Contact integration method A method of making a contact plug and a metallization line structure is disclosed in which a substrate is provided with at least one contact hole within an insulation layer situated on a semiconductor substrate of a semiconductor wafer. A first metal layer is deposi... | 11/13/2007 |
| 7291555 | Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon A method of forming a reaction product includes providing a semiconductor substrate comprising a first material. A second material is formed over the first material. The first and second materials are of different compositions, and are proximate one another at an in... | 11/06/2007 |
