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| Number | Title | Issue Date |
| 7947599 | Laser annealing for 3-D chip integration A laser annealing method for annealing a stacked semiconductor structure having at least two stacked layers is disclosed. A laser beam is focused on a lower layer of the stacked layers. The laser beam is then scanned to anneal features in the lower layer. The laser ... | 05/24/2011 |
| 7709379 | Electrical device comprising conductors made of carbonized plastic, and method and apparatus for the production thereof An electrical device having carbonized conductors and a method and a device for the production thereof is disclosed. The electrical device has electrical components having connections. Furthermore, there are situated between the electrical components regions made of... | 05/04/2010 |
| 7682970 | Maskless nanofabrication of electronic components The present invention relates to systems, materials and methods for the formation of conducting, semiconducting, and dielectric layers, structures and devices from suspensions of nanoparticles. Drop-on-demand systems are used in some embodiments to fabricate various... | 03/23/2010 |
| 7494923 | Manufacturing method of wiring substrate and semiconductor device The present invention provides a method for forming a wiring having a minute shape on a large substrate with a small number of steps, and further a wiring substrate formed by the method. Moreover, the present invention provides a semiconductor device in which cost r... | 02/24/2009 |
| 7485576 | Method of forming conductive pattern, thin film transistor, and method of manufacturing the same A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transisto... | 02/03/2009 |
| 7442644 | Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating apparatus used for the same To remove the disparate substrate from nitride semiconductor layer grown over the disparate substrate, that is made of a material different from nitride semiconductor, by irradiating the disparate substrate with laser beam having a wavelength shorter than the band g... | 10/28/2008 |
| 7358151 | Microelectromechanical system microphone fabrication including signal processing circuitry on common substrate A MEMS microphone is formed on a single substrate that also includes microelectronic circuitry. High-temperature tolerance metals are used to form contacts in a metallization step before performing deep reactive ion etching and back patterning steps to form a MEMS m... | 04/15/2008 |
| 7338843 | Method for producing an electronic component, especially a memory chip A method for producing an electronic component, especially a memory chip, using a laser-induced correction to equalize an integrated circuit by means of at least one laser via in a layer at least partially covering the circuit. The component comprises a rewiring of ... | 03/04/2008 |
| 7319052 | Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method An alloying method includes the steps of forming a metal layer on a semiconductor having been transferred to a material having a low thermal conductivity, and alloying an interface between the semiconductor and the metal layer by irradiating the interface with a las... | 01/15/2008 |
| 7315082 | Semiconductor device having integrated circuit contact A process for forming vertical contacts in the manufacture of integrated circuits, and devices so manufactured, is disclosed. The process eliminates the need for precise mask alignment and allows the etch of the contact hole to be controlled independent of the etch ... | 01/01/2008 |
| 7312125 | Fully depleted strained semiconductor on insulator transistor and method of making the same An integrated circuit includes multiple layers. A semiconductor-on-insulator (SOI) wafer can be used to house transistors. Two substrates or wafers can be bonded to form the multiple layers. A strained semiconductor layer can be between a silicon germanium layer and... | 12/25/2007 |
| 7291523 | Method of manufacturing a semiconductor device After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performe... | 11/06/2007 |
| 7288480 | Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substra... | 10/30/2007 |
| 7256112 | Laser activation of implanted contact plug for memory bitline fabrication An example method of forming a bitline contact region and bitline contact plug for a memory device using a laser irradiation activation process. An example embodiment comprises: providing a substrate having a logic region and a SONOS memory region. We form in the me... | 08/14/2007 |
| 7205566 | Transistor-level signal cutting method and structure A modifiable circuit structure and its method of formation are disclosed. The modifiable circuit structure electrically couples one portion of an interconnect with another portion of the interconnect through vias disposed in a dielectric layer. The combination of th... | 04/17/2007 |
| 7205230 | Process for manufacturing a wiring board having a via A process for manufacturing a wiring board comprising a substrate made of an insulation material and having first and second surfaces, first and second conductor patterns formed on the first and second surfaces, respectively, and a via conductor penetrating the subs... | 04/17/2007 |
| 7192479 | Laser annealing mask and method for smoothing an annealed surface A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having ap... | 03/20/2007 |
| 7179695 | Method of forming wiring A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating laye... | 02/20/2007 |
| 7135405 | Method to form an interconnect Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described. ... | 11/14/2006 |
| 7115503 | Method and apparatus for processing thin metal layers A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern... | 10/03/2006 |
| 7112528 | Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates selective chemical vapor deposition aluminum (CVD ... | 09/26/2006 |
| 7106439 | Elementary analysis device by optical emission spectrometry on laser produced plasma This device comprises a pulsed laser source (6), means (8, 10, 12) for focusing light from this source onto an object to be analysed (2) to produce plasma on the surface of the object, means (16, 18) of analyzing a plasma radiation spectr... | 09/12/2006 |
| 7105264 | Method for forming patterned conductive film, electrooptical device, and electronic appliance Exemplary embodiments of the present invention provide a method to form a patterned conductive film by modifying a conductive thin film on a substrate irrespective of the material used for the substrate. Exemplary embodiments include a substrate having a conductive ... | 09/12/2006 |
| 7087523 | Method for producing a structure using nanoparticles For forming a fine structure of a desired material, nanoparticles of the same material are prepared in a suspension. A layer of the suspension is applied by a drop-on-demand printing system to a substrate. At least part of the layer is exposed to laser light for mel... | 08/08/2006 |
| 7064063 | Photo-thermal induced diffusion Formation of a mixed-material composition through diffusion using photo-thermal energy. The diffusion may be used to create electrically conductive traces. The diffusion may take place between material layers on one of a package substrate, semiconductor substrate, s... | 06/20/2006 |
| 7049227 | Method for alloying a wiring portion for a image display device An alloying method includes the steps of forming a metal layer on a semiconductor having been transferred to a material having a low thermal conductivity, and alloying an interface between the semiconductor and the metal layer by irradiating the interface with a las... | 05/23/2006 |
| 7045458 | Semiconductor and method of manufacturing the same A semiconductor comprises a substrate including a single crystal semiconductor region, and a pattern including a line pattern provided on the substrate, the line pattern having a longitudinal direction differing from a crystal orientation of the single crystal semic... | 05/16/2006 |
| 7041580 | Laser annealing method and laser annealing device A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and seco... | 05/09/2006 |
| 7037831 | Method of production of multilayer ceramic electronic device A method of production of a multilayer ceramic capacitor or other multilayer ceramic electronic device with few structural defects and improved highly accelerated life, that is, a method of production of a multilayer ceramic electronic device having a firing step of... | 05/02/2006 |
| 7011990 | Alloying method using laser irradiation for a light emitting device An alloying method includes the steps of forming a metal layer on a semiconductor having been transferred to a material having a low thermal conductivity, and alloying an interface between the semiconductor and the metal layer by irradiating the interface with a las... | 03/14/2006 |
| 7011994 | Method of forming wiring and method of manufacturing image display system by using the same A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating laye... | 03/14/2006 |
| 7011868 | Fluorine-free plasma curing process for porous low-k materials Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas... | 03/14/2006 |
| 7008827 | Alloy method using laser irradiation An alloying method includes the steps of forming a metal layer on a semiconductor having been transferred to a material having a low thermal conductivity, and alloying an interface between the semiconductor and the metal layer by irradiating the interface with a las... | 03/07/2006 |
| 6995096 | Method for forming multi-layer wiring structure For suppressing decomposition of an organic group (for example, a CH3 group) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming... | 02/07/2006 |
| 6992862 | Disk drive with controlled pitch static attitude of sliders on integrated lead suspensions by improved plastic deformation processing The pitch static attitude of a slider in an integrated lead suspension head gimbal assembly of a disk drive is controlled at the manufacturing stage. The integrated lead suspension includes a load beam, a mount plate, a hinge and a flexure made out of a multi-layer ... | 01/31/2006 |
| 6962860 | Method of manufacturing a semiconductor device To provide a continuous-oscillating laser apparatus capable of improving the efficiency of substrate treatment, a method of irradiating a laser beam, and a method of manufacturing a semiconductor device using the laser apparatus. Of the entire semiconductor film, a ... | 11/08/2005 |
| 6933186 | Method for BEOL resistor tolerance improvement using anodic oxidation A method of improving the tolerance of a back-end-of-the-line (BEOL) thin film resistor is provided. Specifically, the method of the present invention includes an anodization step which is capable of converting a portion of base resistor film into an anodized region... | 08/23/2005 |
| 6878574 | Alloying method for a image display device using laser irradiation An alloying method includes steps of forming a metal layer on a semiconductor that is then transferred to a material having a low thermal conductivity. An interface between the semiconductor and the metal layer is formed into an alloy by irradiating the interface wi... | 04/12/2005 |
| 6872649 | Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film A light emitting-layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-typ... | 03/29/2005 |
| 6872643 | Implant damage removal by laser thermal annealing A method of manufacturing a semiconductor device includes forming a layer over a substrate, and doping the layer with a dopant, after which the layer is laser thermal annealed. The layer can be a nitride, an oxide, or a polysilicon layer. The dopants can be arsenic,... | 03/29/2005 |
