Class 438/656 - Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein at least one of the diverse conductive
No. of patents: 956
Last issue date: 10/18/2011

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Number	Title	Issue Date
8039391	Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layer A method of forming a contact in a semiconductor device provides a titanium contact layer in a contact hole and a MOCVD-TiN barrier metal layer on the titanium contact layer. Impurities are removed from the MOCVD-TiN barrier metal layer by a plasma treatment in a ni...	10/18/2011
8003528	Semiconductor structure and method for making the same A method for forming a semiconductor structure is provided. The method includes providing a substrate; forming a dielectric layer on the substrate; forming a conductor pattern on a main surface of the dielectric layer, the conductor pattern having a top surface and ...	08/23/2011
7935628	Silicon carbide semiconductor device and method for producing the same A low on-resistance silicon carbide semiconductor device is provided to include an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. Specifically, the silicon carbide semiconductor device includes at l...	05/03/2011
7892970	Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the present invention comprises heating a porous silicon deposition s...	02/22/2011
7867901	Method for forming silicide in semiconductor device A method for forming silicide in a semiconductor device includes simultaneously performing a cleaning process and an etching process to remove a silicide metal layer if an excessive delay in time lapses after forming the silicide metal layer. This may prevent the oc...	01/11/2011
7842609	Method for manufacturing semiconductor device A hole is formed in an insulating layer. A semiconductor substrate is heated at a temperature of equal to or more than 330° C. and equal to or less than 400° C. Tungsten-containing gas and at least one of B2H6 gas and SiH4 gas are ...	11/30/2010
7772114	Method for improving uniformity and adhesion of low resistivity tungsten film Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. ...	08/10/2010
7754604	Reducing silicon attack and improving resistivity of tungsten nitride film The present invention provides improved methods of depositing tungsten-containing films on substrates, particularly on silicon substrates. The methods involve depositing an interfacial or “flash” layer of tungsten on the silicon prior to deposition of tungsten n...	07/13/2010
7754605	Ultrashallow semiconductor contact by outdiffusion from a solid source The surface of a conductive layer such as a conductive nitride, a conductive silicide, a metal, or metal alloy or compound, is exposed to a dopant gas which provides an n-type or p-type dopant. The dopant gas may be included in a plasma. Semiconductor material, such...	07/13/2010
7713868	Strained metal nitride films and method of forming A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing the substrate to a gas containing a nitrogen precursor ...	05/11/2010
7709377	Thin film including multi components and method of forming the same A thin film including multi components and a method of forming the thin film are provided, wherein a method according to an embodiment of the present invention, a substrate is loaded into a reaction chamber. A unit material layer is formed on the substrate. The unit...	05/04/2010
7691742	Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a ta...	04/06/2010
7598170	Plasma-enhanced ALD of tantalum nitride films Methods of controllably producing conductive tantalum nitride films are provided. The methods comprise contacting a substrate in a reaction space with alternating and sequential pulses of a tantalum source material, plasma-excited species of hydrogen and nitrogen so...	10/06/2009
7595264	Fabrication method of semiconductor device A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory met...	09/29/2009
7553762	Method for forming metal silicide layer The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an ox...	06/30/2009
7531452	Strained metal silicon nitride films and method of forming A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing the substrate to a gas containing a silicon precursor, ...	05/12/2009
7524762	Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a ta...	04/28/2009
7514360	Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing s...	04/07/2009
7510967	Method for manufacturing semiconductor device The present invention relates to a method for manufacturing a semiconductor device, comprising: forming a metal interconnect on a substrate; forming a refractory metal layer containing titanium (Ti) or tantalum (Ta) on a surface of the metal interconnect; forming an...	03/31/2009
7479451	Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of ...	01/20/2009
7468320	Reduced electromigration and stressed induced migration of copper wires by surface coating The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the n...	12/23/2008
7465660	Graded/stepped silicide process to improve MOS transistor A silicide having variable internal metal concentration tuned to surface conditions at the interface between the silicide and adjoining layers is employed within an integrated circuit. Higher silicon/metal (silicon-rich) ratios are employed near the interfaces to ad...	12/16/2008
7435670	Bit line barrier metal layer for semiconductor device and process for preparing the same The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of a substrate so as to expose a...	10/14/2008
7422979	Method of forming a semiconductor device having a diffusion barrier stack and structure thereof A diffusion barrier stack is formed by forming a layer comprising a metal over a conductor that includes copper; and forming a first dielectric layer over the layer, wherein the dielectric layer is of a thickness that alone it can not serve as a diffusion barrier la...	09/09/2008
7416932	Power composite integrated semiconductor device and manufacturing method thereof A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper...	08/26/2008
7410900	Metallisation This invention relates to photosensitive organometallic compounds which are used in the production of metal deposits. In particular, this invention relates to photosensitive organometallic compounds such as bis-(perfluoropropyl)-1,5-cyclooctadiene platinum (II) (i.e...	08/12/2008
7393781	Capping of metal interconnects in integrated circuit electronic devices A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap. ...	07/01/2008
7378339	Barrier for use in 3-D integration of circuits A method for forming a semiconductor device includes providing a first integrated circuit having a landing pad and attaching a second integrated circuit to the first integrated circuit using at least one bonding layer. The second integrated circuit has an inter-circ...	05/27/2008
7371681	Method of manufacturing a semiconductor device An electrode on a semiconductor substrate includes a polysilicon layer, a silicon-implanted layer on the polysilicon layer, a tungsten nitride layer on the silicon-implanted layer, a tungsten nitride layer on the silicon-implanted layer, and a tungsten layer on the ...	05/13/2008
7371668	Method for making a metal oxide semiconductor device A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the t...	05/13/2008
7371680	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A contact hole is formed to pass through the interlayer insulating film to...	05/13/2008
7371667	Semiconductor device and method of fabricating same There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/d...	05/13/2008
7361387	Plasma enhanced pulsed layer deposition A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing pl...	04/22/2008
7358143	Semiconductor device In an n-channel type power MISFET, a source electrode in contact with an n+-semiconductor region (source region) and a p+-semiconductor region (back gate contact region) is constituted with an Al film and an underlying barrier film comprised of...	04/15/2008
7354853	Selective dry etching of tantalum and tantalum nitride The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers (30) are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which pass...	04/08/2008
7344978	Fabrication method of semiconductor device A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over th...	03/18/2008
7341933	Method for manufacturing a silicided gate electrode using a buffer layer The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes providing a capped polysilicon gate electrode (	03/11/2008
7341959	Plasma enhanced atomic layer deposition system and method A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone prox...	03/11/2008
7338901	Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followe...	03/04/2008
7335587	Post polish anneal of atomic layer deposition barrier layers A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ab...	02/26/2008

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Class 438/656 - Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)