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| Number | Title | Issue Date |
| 8178441 | Semiconductor device and method for manufacturing the same A method for manufacturing a semiconductor device includes forming a gate insulating layer, a gate and a protective layer on a semiconductor substrate, forming a spacer on lateral sides of the protective layer and the gate, forming one or more junction regions in th... | 05/15/2012 |
| 8173542 | Method of forming conductive layer and semiconductor device Provided are a method of forming a conductive layer on an inner portion of a through-electrode in which uniform adhesion property of plating in the inner portion of a through-hole is enhanced and a tact time is short, and a semiconductor device. The method of formin... | 05/08/2012 |
| 8163647 | Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof An electronic device having a structure of an ohmic connection to a carbon element cylindrical structure body, wherein a metal material is positioned inside the junction part of a carbon element cylindrical structure body joined to a connection objective and the car... | 04/24/2012 |
| 8158510 | Semiconductor device and method of forming IPD on molded substrate A semiconductor device is made by depositing an encapsulant material between first and second plates of a chase mold to form a molded substrate. A first conductive layer is formed over the molded substrate. A resistive layer is formed over the first conductive layer... | 04/17/2012 |
| 8097537 | Phase change memory cell structures and methods Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creat... | 01/17/2012 |
| 8021980 | Methods of manufacturing semiconductor devices including a copper-based conductive layer Provided are methods of manufacturing semiconductor devices. The methods may include forming a first insulation layer on a semiconductor substrate, forming a groove by selectively etching the first insulation layer, filling the groove with a copper-based conductive ... | 09/20/2011 |
| 8008193 | Manufacturing method of semiconductor device and semiconductor manufacturing apparatus therefor Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element format... | 08/30/2011 |
| 7994051 | Implantation method for reducing threshold voltage for high-K metal gate device The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a high-k dielectric layer over a semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping lay... | 08/09/2011 |
| 7964499 | Methods of forming semiconductor solar cells having front surface electrodes Solar cells include a substrate having a light collecting surface thereon and a P-N rectifying junction within the substrate. The P-N rectifying junction includes a base region of first conductivity type (e.g., p-type) and a semiconductor layer of second conductivit... | 06/21/2011 |
| 7964498 | Phase-change memory device capable of improving contact resistance and reset current and method of manufacturing the same A phase-change memory device and a method of manufacturing the same, wherein the phase-change memory device includes a semiconductor substrate having a switching device, a phase-change layer formed on the semiconductor substrate having the switching device to change... | 06/21/2011 |
| 7960279 | Semiconductor device and manufacturing method therefor In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relati... | 06/14/2011 |
| 7947598 | Substrate for semiconductor device, resin-sealed semiconductor device, method for manufacturing said substrate for semiconductor device and method for manufacturing said resin-sealed semiconductor device A substrate for a semiconductor device includes: a base plate, a plurality of external terminal portions respectively arranged in a plane on the base plate and having external terminal faces respectively facing the base plate; a plurality of internal terminal portio... | 05/24/2011 |
| 7928009 | Method for making semiconductor electrodes A method for making semiconductor electrodes includes provided a wafer. The wafer includes at least one conductive unit, a plurality of first connective units connected to the conductive unit, a plurality of first metal layers connected to the first connective units... | 04/19/2011 |
| 7867897 | Low leakage metal-containing cap process using oxidation An interconnect structure which includes a metal-containing cap located atop each conductive feature that is present within a dielectric material is provided in which a surface region of the metal-containing cap is oxidized prior to the subsequent deposition of any ... | 01/11/2011 |
| 7855144 | Method of forming metal lines and bumps for semiconductor devices Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be fo... | 12/21/2010 |
| 7790610 | Methods of manufacturing memory units, and methods of manufacturing semiconductor devices Methods of fabricating a memory unit are provided including forming a plurality of first nanowire structures, each of which includes a first nanowire extending in a first direction parallel to the first substrate and a first electrode layer enclosing the first nanow... | 09/07/2010 |
| 7754603 | Multi-functional chalcogenide electronic devices having gain Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of a control signal to the control terminal permits the device to funct... | 07/13/2010 |
| 7704880 | Method of forming contact layers on substrates A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined re... | 04/27/2010 |
| 7700481 | Method for reliably removing excess metal during metal silicide formation A method for manufacturing a semiconductor device. The method comprises forming a metal layer on a silicon-containing layer located on a semiconductor substrate. The method also comprises reacting a portion of the metal layer with the silicon-containing layer to for... | 04/20/2010 |
| 7659197 | Selective resputtering of metal seed layers Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves depositing a first portion of seed layer material, subsequently selectively resputtering the deposited seed layer material in the presence of exposed diff... | 02/09/2010 |
| 7638429 | Thin film encapsulation of MEMS devices A method of manufacturing a miniature electromechanical system (MEMS) device includes the steps of forming a moving member on a first substrate such that a first sacrificial layer is disposed between the moving member and the substrate, encapsulating the moving memb... | 12/29/2009 |
| 7638430 | Method of forming contact plug of semiconductor device The present invention relates to a method of forming contact plugs of a semiconductor device. According to the method, a first insulating layer is formed over a semiconductor substrate in which a cell region and a peri region are defined and a first contact plug is ... | 12/29/2009 |
| 7560381 | Technique for metal deposition by electroless plating using an activation scheme including a substrate heating process In an enhanced technique for electroless metal deposition, the substrate is heated to or above the operating temperature for the specific plating solution, while the plating solution may be maintained at a non-critical low temperature to substantially prevent sponta... | 07/14/2009 |
| 7550380 | Electroless plating of metal caps for chalcogenide-based memory devices A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the ... | 06/23/2009 |
| 7507660 | Deposition processes for tungsten-containing barrier layers In one embodiment, a method for forming a barrier material on a substrate is provided which includes exposing a dielectric layer on the substrate to a plasma during a preclean process, wherein the dielectric layer contains a feature having sidewalls and a bottom sur... | 03/24/2009 |
| 7468319 | Method for preventing a metal corrosion in a semiconductor device The present invention relates to a method for preventing a metal corrosion in a semiconductor device. The present method includes the steps of etching of a metal layer in a chamber, the metal layer having a photoresist pattern thereon or thereover; oxidizing a surfa... | 12/23/2008 |
| 7443019 | Semiconductor device with conductor tracks between semiconductor chip and circuit carrier and method for producing the same The invention relates to a semiconductor device with conductor tracks between a semiconductor chip and a circuit carrier, and to a method for producing the same. The conductor tracks extend from contact areas on the top side of the semiconductor chip to contact pads... | 10/28/2008 |
| 7436067 | Methods for forming conductive structures and structures regarding same A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g., ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain bou... | 10/14/2008 |
| 7435680 | Method of manufacturing a circuit substrate and method of manufacturing an electronic parts packaging structure A method of manufacturing a circuit substrate of the present invention, includes the steps of forming an n-layered (n is an integer of 1 or more) wiring layer connected electrically to a metal plate on the metal plate, forming an electroplating layer on a connection... | 10/14/2008 |
| 7435672 | Metal-germanium physical vapor deposition for semiconductor device defect reduction The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130 | 10/14/2008 |
| 7427543 | Method to improve drive current by increasing the effective area of an electrode The present invention provides source/drain electrode 100 for a transistor 105. The source/drain electrode 100 comprises a plurality of polysilicon grains 100 located over a source/drain region 115. A metal salicide layer 120 | 09/23/2008 |
| 7416975 | Method of forming contact layers on substrates A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined re... | 08/26/2008 |
| 7413975 | Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the... | 08/19/2008 |
| 7413974 | Copper-metallized integrated circuits having electroless thick copper bond pads A metal structure (100) for a contact pad of a semiconductor, which has interconnecting traces of a first copper layer (102). The substrate is protected by an insulating overcoat (104). The first copper layer of first thickness and first crystal... | 08/19/2008 |
| 7411298 | Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and... | 08/12/2008 |
| 7407883 | Electronic package with improved current carrying capability and method of forming the same An electronic package and method for forming such package that expands the current capability of lines and/or reducing line resistance for packages with a given feature dimension while relaxing feature tolerances. The methods and structures include electrical wiring... | 08/05/2008 |
| 7402944 | Organic light emitting display device and method of fabricating the same An organic light emitting display device (OLED) and a method of fabricating the same, in which electric field influence between first and second electrodes is reduced in an edge region of a unit pixel. The OLED includes a substrate, and a thin film transistor (TFT) ... | 07/22/2008 |
| 7399706 | Manufacturing method of semiconductor device There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups | 07/15/2008 |
| 7396763 | Semiconductor package using flexible film and method of manufacturing the same A semiconductor package and a method of manufacturing the same: The package includes a substrate, an external connection terminal portion on at least one edge thereof; a semiconductor chip bonded to the substrate, the semiconductor chip including a plurality of bond... | 07/08/2008 |
| 7396750 | Method and structure for contacting two adjacent GMR memory bit A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via. ... | 07/08/2008 |
