Class 438/648 - Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for forming at least one layer of the diverse
No. of patents: 942
Last issue date: 11/01/2011

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Number	Title	Issue Date
8048799	Method for forming copper wiring in semiconductor device A method for forming copper wirings in a semiconductor device may include depositing a lower insulating film over a semiconductor substrate; forming vias in the lower insulating film; depositing tungsten over the entire surface of upper portion of the lower insulati...	11/01/2011
8003525	Semiconductor device and method of manufacturing the same A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the so...	08/23/2011
7955972	Methods for growing low-resistivity tungsten for high aspect ratio and small features The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL...	06/07/2011
7947597	Methods of titanium deposition Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surf...	05/24/2011
7906429	Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas press...	03/15/2011
7846835	Contact barrier layer deposition process A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process. The IMP process includes: generating gaseous ions, accelerating the...	12/07/2010
7833903	Semiconductor device and method of manufacturing the same In a method of manufacturing a semiconductor device, a refractory metal film is stacked on a first wiring metal film. An antireflection film is deposited on the refractory metal film. A wiring including the first wiring metal film, the refractory metal film, and the...	11/16/2010
7820548	Semiconductor device and manufacturing method thereof A result of formation of an opening in a semiconductor substrate can be judged without cutting a semiconductor wafer and observing a cross-section of the cut wafer. A semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed o...	10/26/2010
7745329	Tungsten nitride atomic layer deposition processes In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen ...	06/29/2010
7709376	Method for fabricating semiconductor device and semiconductor device A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; r...	05/04/2010
7700480	Methods of titanium deposition Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surf...	04/20/2010
7674710	Method of integrating metal-containing films into semiconductor devices A method for integrating a metal-containing film in a semiconductor device, for example a gate stack. In one embodiment, the method includes providing a substrate in a process chamber, depositing the tungsten-containing film on the substrate at a first substrate tem...	03/09/2010
7589017	Methods for growing low-resistivity tungsten film Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods...	09/15/2009
7510966	Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines The invention includes an electrically conductive line, methods of forming electrically conductive lines, and methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines. In one implementation, a...	03/31/2009
7435679	Alloyed underlayer for microelectronic interconnects Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during...	10/14/2008
7435673	Methods of forming integrated circuit devices having metal interconnect structures therein Methods of forming metal interconnect structures include forming a first electrically insulating layer on a semiconductor substrate and forming a second electrically insulating layer on the first electrically insulating layer. The second and first electrically insul...	10/14/2008
7435670	Bit line barrier metal layer for semiconductor device and process for preparing the same The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of a substrate so as to expose a...	10/14/2008
7425503	Apparatus and method for enhanced thermal conductivity packages for high powered semiconductor devices An apparatus and method for an enhanced thermally conductive package for high powered semiconductor devices. The package includes a semiconductor die having an active surface and a non-active surface and a metal layer formed on the non-active surface of the die. The...	09/16/2008
7416974	Method of manufacturing semiconductor device, and semiconductor device A method of manufacturing a semiconductor device, comprising a first step of forming a layer insulation film on a lower layer wiring provided on a substrate and forming a connection hole in the layer insulation film, a second step of forming an alloy layer composed ...	08/26/2008
7416980	Forming a barrier layer in interconnect joints and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer. ...	08/26/2008
7407876	Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper A method for processing a substrate for forming TaC and TaCN films having good adhesion to Cu. The method includes disposing the substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, and dep...	08/05/2008
7407888	Semiconductor device and a fabrication process thereof A method of fabricating a semiconductor device comprises the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitrid...	08/05/2008
7405143	Method for fabricating a seed layer The present invention produces a seed layer for the deposition of copper for metallizing integrated circuits. A diffusion barrier is deposited upon the wafer. In one embodiment of the invention, a metal oxide layer is then formed on the diffusion barrier. The oxidiz...	07/29/2008
7371667	Semiconductor device and method of fabricating same There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/d...	05/13/2008
7371680	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A contact hole is formed to pass through the interlayer insulating film to...	05/13/2008
7371679	Semiconductor device with a metal line and method of forming the same A method of forming a metal line in a semiconductor device including forming an inter-metal dielectric (IMD) layer on the semiconductor substrate including the predetermined pattern, planarizing the IMD layer through a first CMP process, and patterning a via hole on...	05/13/2008
7368014	Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may b...	05/06/2008
7365430	Semiconductor device and method of manufacturing the same Disclosed herein is a semiconductor device and method of manufacturing the same. A step between a memory cell formed in a cell region and a transistor formed in a peripheral circuit region is minimized, and the height of a gate in the memory cell is minimized. Accor...	04/29/2008
7361533	Stacked embedded leadframe A method of forming a stackable embedded leadframe package includes coupling an electronic component having bond pads to a substrate; coupling on the substrate a leadframe having a plurality of leads, each lead having a lower mounting portion; encapsulating the elec...	04/22/2008
7358170	Methods of forming conductive interconnects, and methods of depositing nickel The invention includes methods of electroless plating of nickel selectively on exposed conductive surfaces relative to exposed insulative surfaces. The electroless plating can utilize a bath which contains triethanolamine, maleic anhydride and at least one nickel sa...	04/15/2008
7354853	Selective dry etching of tantalum and tantalum nitride The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers (30) are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which pass...	04/08/2008
7354842	Methods of forming conductive materials The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to rele...	04/08/2008
7344974	Metallization method of semiconductor device A method for forming a metallization contact in a semiconductor device includes the steps of: (a) forming an insulating layer on a semiconductor substrate including an active device region; (b) forming a contact hole to expose a portion of the active device region b...	03/18/2008
7335590	Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated thereby In a method of fabricating a semiconductor device by selectively forming a diffusion barrier layer, and a semiconductor device fabricated thereby, a conductive pattern and an insulating layer, which covers the conductive pattern, are formed on a semiconductor substr...	02/26/2008
7329599	Method for fabricating a semiconductor device Methods are provided for semiconductor devices having low contact resistance. The method in accordance with one embodiment of the invention comprises forming an insulating layer overlying a semiconductor substrate, the semiconductor substrate having a device region ...	02/12/2008
7316783	Method of wiring formation and method for manufacturing electronic components A method of wiring formation includes forming a feeder film partially on a substrate, forming on the substrate a plating base film via a physical film making method so that the plate base film partially overlaps the feeder film, forming a plated wiring on the platin...	01/08/2008
7315082	Semiconductor device having integrated circuit contact A process for forming vertical contacts in the manufacture of integrated circuits, and devices so manufactured, is disclosed. The process eliminates the need for precise mask alignment and allows the etch of the contact hole to be controlled independent of the etch ...	01/01/2008
7311946	Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially...	12/25/2007
7312111	Liquid crystal display panel An LCD panel includes a plurality of gate lines and gate electrodes formed on a substrate and a gate insulating film formed on the substrate including the gate lines and the gate electrodes. A semiconductor film is formed in a region on the gate insulating film and ...	12/25/2007
7312127	Incorporating dopants to enhance the dielectric properties of metal silicates The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. Accor...	12/25/2007

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Class 438/648 - Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)