Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
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| Number | Title | Issue Date |
| 8183153 | Method for manufacturing semiconductor device Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufactur... | 05/22/2012 |
| 8053361 | Interconnects with improved TDDB A method for forming a semiconductor device is presented. A substrate prepared with a dielectric layer formed thereon is provided. A first upper etch stop layer is formed on the dielectric layer. The first upper etch stop layer includes a first dielectric material. ... | 11/08/2011 |
| 7888263 | Cladded silver and silver alloy metallization for improved adhesion electromigration resistance In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially ... | 02/15/2011 |
| 7858517 | Method of manufacturing semiconductor device, and semiconductor device First, in a first step, a gate electrode is formed over a silicon substrate, with a gate insulation film therebetween. Next, in a second step, etching with the gate electrode as a mask is conducted so as to dig down a surface layer of the silicon substrate. Subseque... | 12/28/2010 |
| 7446037 | Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially ... | 11/04/2008 |
| 7435678 | Method of depositing noble metal electrode using oxidation-reduction reaction Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber; and generating plasma in the reaction chamber to form a ... | 10/14/2008 |
| 7435679 | Alloyed underlayer for microelectronic interconnects Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during... | 10/14/2008 |
| 7368416 | Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ... | 05/06/2008 |
| 7365007 | Interconnects with direct metalization and conductive polymer Embodiments include an interconnect or trace of electrically conductive material with a contact surface, and a dielectric layer overlying the contact surface with a via formed on the dielectric layer and to the contact surface. The via sidewalls and perimeter are la... | 04/29/2008 |
| 7361590 | Semiconductor device and manufacturing method thereof A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of four... | 04/22/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7348671 | Vias having varying diameters and fills for use with a semiconductor device and methods of forming semiconductor device structures including same A method for forming electrical interconnects having different diameters and filler materials through a semiconductor wafer comprises forming first and second openings through a semiconductor, wherein the first opening has a narrower width (smaller diameter) than th... | 03/25/2008 |
| 7341642 | Manufacturing method for electric device The present invention provides a method of manufacturing an electric device, wherein an adhesive applied on a flexible wiring board is heated to a first temperature to lower its viscosity to a sufficient level, after which a semiconductor chip is placed onto the adh... | 03/11/2008 |
| 7332383 | Switching device for a pixel electrode and methods for fabricating the same The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/... | 02/19/2008 |
| 7309651 | Method for improving reliability of copper interconnects Doping copper interconnects (100) with silicon (115) has been shown to improve Electromigration and Via Stress Migration reliability. After copper (118) is deposited by electrochemical deposition and chemically-mechanically polished back, doping... | 12/18/2007 |
| 7288474 | Suspension for filling via holes in silicon and method for making the same A metallization process and material system for metallizing either blind or through vias in silicon, involving forming a low coefficient of thermal expansion composite or suspension, relative to pure metals, such as copper, silver, or gold, and filling the via holes... | 10/30/2007 |
| 7279416 | Methods of forming a conductive structure in an integrated circuit device A conductive structure is formed in an integrated circuit device by forming a lower conductive pattern on a substrate. A barrier metal layer is formed on the lower conductive pattern. The barrier metal layer is flushed with a gas that includes a halogen group gas an... | 10/09/2007 |
| 7271099 | Forming a conductive pattern on a substrate A method of forming a conductive pattern on a substrate. The method comprising providing a substrate carrying a conductive layer; forming a first portion of the conductive pattern by exposing the conductive layer to a laser and controlling the laser to remove conduc... | 09/18/2007 |
| 7268073 | Post-polish treatment for inhibiting copper corrosion Methods (102) are presented for protecting copper structures (26) from corrosion in the fabrication of semiconductor devices (2), wherein a thin semiconductor or copper-semiconductor alloy corrosion protection layer (30) is formed on an e... | 09/11/2007 |
| 7259096 | Method for forming aluminum interconnect A method for forming an Al interconnect is disclosed. A disclosed method comprises: depositing a Ti layer on a substrate having predetermined devices; depositing a TiN layer on the entire surface of the Ti layer by performing a CVD process; performing a plasma treat... | 08/21/2007 |
| 7244675 | Electrical connection materials and electrical connection method The present invention is to provide an electrical connection material through which an electrical connection via conductive particles can be performed reliably regardless of a little unevenness of an object. The electrical connection material is an electrical connec... | 07/17/2007 |
| 7238626 | Chemically and electrically stabilized polymer films A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacu... | 07/03/2007 |
| 7232757 | Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device Cu interconnections embedded in an interconnection slot of a silicon oxide film are formed by polishing using CMP to improve the insulation breakdown resistance of a copper interconnection formed using the Damascene method, and after a post-CMP cleaning step, the su... | 06/19/2007 |
| 7229921 | Semiconductor device and manufacturing method for the same In a method of manufacturing a semiconductor device, a first wiring line composed of a copper containing metal film is formed on or above a semiconductor substrate. A first interlayer insulating film is formed on a whole surface of the semiconductor substrate to cov... | 06/12/2007 |
| 7223685 | Damascene fabrication with electrochemical layer removal The present application discloses process comprising providing a wafer, the wafer comprising an inter-layer dielectric (ILD) having a feature therein, an under-layer deposited on the ILD, and a barrier layer deposited on the under-layer, and a conductive layer depos... | 05/29/2007 |
| 7223692 | Multi-level semiconductor device with capping layer for improved adhesion A multi-layer semiconductor device including copper interconnects with improved interlayer adhesion and a method for forming the same, the method including providing a semiconductor substrate comprising a dielectric insulating layer comprising copper containing inte... | 05/29/2007 |
| 7217652 | Method of forming highly conductive semiconductor structures via plasma etch A process for making semiconductor structures uses a decoupled plasma source to produce a highly selective plasma etchant to form a structure with a thin adhesive layer and overlaying conductive layer. The preferred plasma is formed from chlorine and oxygen feed gas... | 05/15/2007 |
| 7214602 | Method of forming a conductive structure A method of forming a conductive structure is disclosed. The method includes forming an interconnect in a substrate, and forming a layer of iridium on the interconnect. The layer of iridium has a thickness of less than six hundred angstroms. The method further inclu... | 05/08/2007 |
| 7208418 | Sealing sidewall pores in low-k dielectrics Barrier metal layer discontinuities or gaps due to low-k dielectric porosity is reduced by sealing sidewall porosity before barrier metal layer deposition. Embodiments include sealing sidewall porosity by depositing a swelling agent, adhesion promoter or an addition... | 04/24/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7202154 | Suspension for filling via holes in silicon and method for making the same A metallization process and material system for metallizing either blind or through vias in silicon, involving forming a low coefficient of thermal expansion composite or suspension, relative to pure metals, such as copper, silver, or gold, and filling the via holes... | 04/10/2007 |
| 7199040 | Barrier layer structure A barrier layer structure includes a first dielectric layer forming on a conductive layer and having a via being formed in the first dielectric layer, wherein the via in the first dielectric layer is connected to the conductive layer. A first metal layer is steppedl... | 04/03/2007 |
| 7189641 | Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on ... | 03/13/2007 |
| 7183649 | Methods and procedures for engineering of composite conductive films by atomic layer deposition A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer b... | 02/27/2007 |
| 7176479 | Nitride compound semiconductor element A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crys... | 02/13/2007 |
| 7153735 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film 9, 10 above a semiconductor substrate 1; forming a capacitor Q having a lower electrode 11a, a dielectric film 13a, and ... | 12/26/2006 |
| 7148139 | Method for forming metal wiring of semiconductor device A method for forming a metal wiring of a semiconductor includes forming an inter metal dielectric layer on a semiconductor substrate having a predetermined low structure with a conductive layer. A plurality of contact holes is formed to expose the conductive layer t... | 12/12/2006 |
| 7144808 | Integration flow to prevent delamination from copper The present invention provides, in one embodiment, method of forming a barrier layer 300 over a semiconductor substrate 110. The method comprises forming an opening 120 in an insulating layer 130 located over a substrate thereby uncovering an underlying copper layer... | 12/05/2006 |
| 7144805 | Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with ... | 12/05/2006 |
| 7135775 | Enhancement of an interconnect A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid t... | 11/14/2006 |
