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| Number | Title | Issue Date |
| 8110496 | Method for performing chemical shrink process over BARC (bottom anti-reflective coating) A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and ha... | 02/07/2012 |
| 8048797 | Multilayer low reflectivity hard mask and process therefor A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multila... | 11/01/2011 |
| 8039389 | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperatu... | 10/18/2011 |
| 8030206 | Coplanar solar cell metal contact annealing in plasma enhanced chemical vapor deposition A solar cell fabrication process is described that includes etching a cap layer into a front surface of a semiconductor structure, depositing an anti-reflective coating onto the front surface of the semiconductor structure, forming a front electrical contact on the ... | 10/04/2011 |
| 8017517 | Dual damascene process A method and system for forming dual damascene structures in a semiconductor package. In one embodiment, the method includes forming an intermediate dielectric layer on a bottom stop layer; forming an ashing removable dielectric layer on the intermediate dielectric ... | 09/13/2011 |
| 7951707 | Etching method for semiconductor element An etching method for semiconductor element is provided. The etching method includes the following procedure. First, a to-be-etched substrate is provided. Then, a silicon-rich silicon oxide (SRO) layer is formed on the to-be-etched substrate. Afterwards, an anti-ref... | 05/31/2011 |
| 7919408 | Methods for fabricating fine line/space (FLS) routing in high density interconnect (HDI) substrates A method for fabricating fine line and space routing described. The method includes providing a substrate having a dielectric layer and a seed layer disposed thereon. An anti-reflective coating layer and a photo-resist layer are then formed above the seed layer. The... | 04/05/2011 |
| 7910477 | Etch residue reduction by ash methodology Methods for forming dual damascene interconnect structures are provided. The methods incorporate an ashing operation comprising a first ash operation and a second overash operation. The ashing operation is performed prior to etching of an etch stop layer. The operat... | 03/22/2011 |
| 7902065 | Multi-layered metal line having an improved diffusion barrier of a semiconductor device and method for forming the same A multi-layered metal line of a semiconductor device and a process of forming the same are described. The multi-layered metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is subsequently formed on the semiconductor substr... | 03/08/2011 |
| 7863184 | System and method for reducing corrosion of an integrated circuit through its bond pads A bond pad structure has a first conductive layer and an anti-reflective coating layer disposed on the first conductive layer. The first conductive layer includes first and second portions (which could be formed by etching). Part of the first portion is exposed with... | 01/04/2011 |
| 7858515 | Method for forming metal line in semiconductor device A method for forming a metal line in a semiconductor device may include forming a silicon (Si) monolayer as an etching prevention layer over an exposed portion of a lower metal layer and sidewalls of an upper metal layer, middle metal layer, and the entire surface o... | 12/28/2010 |
| 7842606 | Method of depositing thin film and method of manufacturing semiconductor using the same Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The me... | 11/30/2010 |
| 7749895 | Capacitor of semiconductor device and method for fabricating the same A method for fabricating a semiconductor device includes forming an interlayer insulating film over a semiconductor substrate. The interlayer insulating film is selectively etched to form a hole defining a storage node region. A lower electrode is formed in the hole... | 07/06/2010 |
| 7718528 | Photoactive adhesion promoter in a SLAM A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, ... | 05/18/2010 |
| 7670945 | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer de... | 03/02/2010 |
| 7589015 | Fabrication of semiconductor devices using anti-reflective coatings Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic ... | 09/15/2009 |
| 7585763 | Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used as a gate sidewall spacer to block at least some dopants from an inte... | 09/08/2009 |
| 7575998 | Semiconductor device and metal line fabrication method of the same Embodiments relate to a method for forming a wiring in a semiconductor device, that may include laminating a conductive layer for wiring formation on a semiconductor substrate, forming a photoresist layer pattern on the conductive layer, performing primary dry etchi... | 08/18/2009 |
| 7557033 | Method of forming metal line of semiconductor memory device A method of forming a metal line of a semiconductor memory device includes the steps of forming plugs of a damascene structure in a first interlayer insulating layer over a semiconductor substrate, forming a barrier metal layer, a metal layer and an anti-reflection ... | 07/07/2009 |
| 7557034 | Semiconductor device and a method of manufacturing the same For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed the... | 07/07/2009 |
| 7538026 | Multilayer low reflectivity hard mask and process therefor A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multila... | 05/26/2009 |
| 7538025 | Dual damascene process flow for porous low-k materials A method of forming a dual damascene opening comprising the following steps. A structure having an overlying exposed conductive layer formed thereover is provided. A dielectric layer is formed over the exposed conductive layer. An anti-reflective coating layer is fo... | 05/26/2009 |
| 7498257 | Methods for metal ARC layer formation A process for forming an ARC layer in the fabrication of a semiconductor device comprises forming a modified ARC layer that increases the resistance to crown defects and bridging and also provides better adhesion for the ARC layer with the underlying metal layer. Th... | 03/03/2009 |
| 7485573 | Process of making a semiconductor device using multiple antireflective materials A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not pr... | 02/03/2009 |
| 7435676 | Dual damascene process flow enabling minimal ULK film modification and enhanced stack integrity Interconnect structures possessing an organosilicate glass interlayer dielectric material with minimal stoichiometeric modification and optionally an intact organic adhesion promoter for use in semiconductor devices are provided herein. The interconnect structure is... | 10/14/2008 |
| 7435354 | Treatment method for surface of photoresist layer and method for forming patterned photoresist layer A treatment method for a surface of a photoresist layer is provided. After forming a patterned photoresist layer over a wafer, a surface treatment step is performed to the photoresist layer by using at least one reaction gas comprising hydrogen bromide or hydrogen i... | 10/14/2008 |
| 7432194 | Etching method and method for forming contact opening An etching method is described, including a first etching step and a second etching step. The temperature of the second etching step is higher than that of the first etching step, such that the after-etching-inspection (AEI) critical dimension is smaller than the af... | 10/07/2008 |
| 7427559 | Method of reducing the surface roughness of spin coated polymer films According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer ... | 09/23/2008 |
| 7416834 | Antireflective coating compositions The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractiv... | 08/26/2008 |
| 7390738 | Fabrication of semiconductor devices using anti-reflective coatings Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic ... | 06/24/2008 |
| 7381637 | Metal spacer in single and dual damascence processing A method and structure for a single or dual damascene interconnect structure comprises forming wiring lines in a metallization layer over a substrate, shaping a laminated insulator stack above the metallization layer, patterning a hardmask over the laminated insulat... | 06/03/2008 |
| 7368173 | Siloxane resin-based anti-reflective coating composition having high wet etch rate Herein we disclose a composition, comprising a siloxane resin having the formula (HSiO3/2)a. (SiO4/2)b(HSiX3/2)c(SiX4/2)d, wherein each X is independently —O—, —OH, or —O... | 05/06/2008 |
| 7364924 | Silicon phosphor electroluminescence device with nanotip electrode An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top elect... | 04/29/2008 |
| 7365014 | Reticle fabrication using a removable hard mask We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull ba... | 04/29/2008 |
| 7364835 | Developer-soluble materials and methods of using the same in via-first dual damascene applications Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflectiv... | 04/29/2008 |
| 7364832 | Wet developable hard mask in conjunction with thin photoresist for micro photolithography A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion e... | 04/29/2008 |
| 7365408 | Structure for photolithographic applications using a multi-layer anti-reflection coating A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring feat... | 04/29/2008 |
| 7361455 | Anti-reflective coatings Anti-reflective materials such as bottom anti-reflective coatings (BARC's) and sacrificial light absorbing materials (SLAM) may be made more effective at preventing coherent light or electron beam reflection from a substrate by including in the anti-reflective mater... | 04/22/2008 |
| 7361588 | Etch process for CD reduction of arc material A method of reducing critical dimensions of a feature in a anti-reflective coating layer structure can utilize a polymerizing agent. The anti-reflective coating structure can be utilized to form various integrated circuit structures. The anti-reflective coating can ... | 04/22/2008 |
| 7358111 | Imageable bottom anti-reflective coating for high resolution lithography A semiconductor wafer may be coated with an imageable anti-reflective coating. As a result, the coating may be removed using the same techniques used to remove overlying photoresists. This may overcome the difficulty of etching anti-reflective coatings using standar... | 04/15/2008 |
