Did You Know...
...that when IBM conducted a market study of Chester Carlson's invention in 1959, the company concluded that it would take only 5000 units of his new product to saturate the market? IBM therefore declined to be part of the new product introduction. Too bad for IBM. Carlson's invention was the xerography process, and his new product was the beginning of the Xerox Corporation. It is estimated that every day, worldwide, 3,000,000,000 copies are made!!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8097532 | Method for manufacturing a semiconductor light emitting device To provide a method for manufacturing a semiconductor light emitting device capable of providing sufficiently low operating voltage. The method for manufacturing a semiconductor light emitting device of the present invention includes: a semiconductor laminati... | 01/17/2012 |
| 7674700 | Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device using the same Disclosed are an apparatus and a method for manufacturing a semiconductor device. The apparatus comprises a transfer chamber for transferring a substrate, a first process chamber connected to the transfer chamber configured to form a TiSiN layer on the substrate, a ... | 03/09/2010 |
| 7476606 | Eutectic bonding of ultrathin semiconductors Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backsid... | 01/13/2009 |
| 7410817 | Liquid crystal display device including driving circuit and method of fabricating the same A method of fabricating an array substrate structure for a liquid crystal display device includes defining a display area and a non-display area on a substrate, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having a... | 08/12/2008 |
| 7396751 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes forming a second storage node contact hole with a mask for storage node and securing an overlay margin between a storage node contact hole and a storage node with a hard mask layer that serves as a hard mask... | 07/08/2008 |
| 7327036 | Method for depositing a group III-nitride material on a silicon substrate and device therefor The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on... | 02/05/2008 |
| 7303933 | Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In.... | 12/04/2007 |
| 7242034 | Method for fabricating a component having an electrical contact region, and component having an electrical contact region A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dop... | 07/10/2007 |
| 7176045 | Laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annea... | 02/13/2007 |
| 7170912 | Laser drilling system and method for flexible printed circuit board A laser drilling system for flexible printed circuit board includes a first mirror, a second mirror, a laser crystal, a third harmonic generator and a second harmonic generator. The first mirror and the second mirror are spaced apart and defined a resonator cavity t... | 01/30/2007 |
| 7132128 | Method and system for depositing material on a substrate using a solid precursor A system and method is disclosed for vaporizing a solid precursor and transporting the precursor vapor to a process chamber. The film precursor vaporization system is coupled to the process chamber and positioned directly above the substrate. A precursor valve syste... | 11/07/2006 |
| 7101780 | Method for manufacturing Group-III nitride compound semiconductor device After a p-seat electrode-forming layer is laminated onto a light-transmissive electrode-forming layer, a first heating step and a second heating step are carried out for alloying the two layers. In the first heating step, heat treatment is performed at a relatively ... | 09/05/2006 |
| 7081401 | Method of fabricating a p-type ohmic electrode in gallium nitride based optical device A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile structure transition metal layer, such as an Ru, Ir or Os layer, or ... | 07/25/2006 |
| 7071508 | Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped ... | 07/04/2006 |
| 7033949 | Structure and manufacturing method for nitride-based light-emitting diodes A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact ... | 04/25/2006 |
| 6998331 | Methods for fabricating three dimensional anisotropic thin films and products produced thereby A three dimensional structure comprising at least two materials capable of being deposited by vapor deposition. The structure is fabricated by the controlled vapor deposition of the materials onto a substrate. ... | 02/14/2006 |
| 6960541 | Process for fabrication of a semiconductor component having a tungsten oxide layer A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative premittivity of the tungsten oxide layer is higher than 50. ... | 11/01/2005 |
| 6955978 | Uniform contact A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap ... | 10/18/2005 |
| 6946313 | Method of making an aligned electrode on a semiconductor structure A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal. The mask has an ope... | 09/20/2005 |
| 6936500 | Method for the lateral contacting of a semiconductor chip A description is given of a method for the lateral contacting of a semiconductor chip in which, in the case of a first semiconductor chip (11), which has an electrical contact (17) in a side face (14), a layer (27) of an adhesive material... | 08/30/2005 |
| 6933220 | Thyristor switch for microwave signals A thyristor for switching microwave signals includes semiconductor layers disposed on a substrate. A first surface of the thyristor defines an anode, and a second surface of the thyristor defines a cathode. The semiconductor layers include at least one semi-insulati... | 08/23/2005 |
| 6924162 | Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In.... | 08/02/2005 |
| 6921928 | Nitride semiconductor element In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p... | 07/26/2005 |
| 6920167 | Semiconductor laser device and method for fabricating thereof A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured port... | 07/19/2005 |
| 6897137 | Process for fabricating ultra-low contact resistances in GaN-based devices A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic con... | 05/24/2005 |
| 6867120 | Method of fabricating a semiconductor device with a gold conductive layer and organic insulating layer In a semiconductor device, particles are removed from the surface of a gold conductive layer before an intermediate insulating layer of an amino silane compound is formed. An organic insulating layer is formed on the intermediate insulating layer. As a result, adhes... | 03/15/2005 |
| 6835636 | Method for fabricating source/drain devices A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed on the semiconductor substrate, and a hard mask layer formed on the gate. A first doped area is formed on a first side of the gate on the semiconductor substrate,... | 12/28/2004 |
| 6828599 | Semiconductor light-emitting diode The present invention relates to a semiconductor LED device comprising a pumping layer with high light emitting efficiency and an active layer with smaller bandgap converting the absorbed light into any kinds of light of wavelength as required, which generates light... | 12/07/2004 |
| 6774025 | Method for producing group III nitride compound semiconductor light-emitting element After a p seat electrode is laminated on a light-transmissive electrode, the two electrodes are heated at a relatively low temperature to thereby remove gas (degassing) from between the two electrodes. Then, the two electrodes are alloyed with each other at a high t... | 08/10/2004 |
| 6774449 | Semiconductor device and method for fabricating the same The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon. ... | 08/10/2004 |
| 6734033 | Ultraviolet light emitting diode A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of ... | 05/11/2004 |
| 6734091 | Electrode for p-type gallium nitride-based semiconductors An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over th... | 05/11/2004 |
| 6727167 | Method of making an aligned electrode on a semiconductor structure A method of making a transparent electrode for a light-emitting diode includes depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal, the mask... | 04/27/2004 |
| 6653215 | Contact to n-GaN with Au termination A contact for n-type III-V semiconductor such as GaN and related nitride-based semiconductors is formed by depositing Al,Ti,Pt and Au in that order on the n-type semiconductor and annealing the resulting stack, desirably at about 400-600° C. for about 1-... | 11/25/2003 |
| 6610589 | Semiconductor light emitting device and method of manufacturing the same A semiconductor lamination including an n-type layer and a p-type layer composed of a gallium nitride based compound semiconductor and forming a light emitting region is formed on the surface of a substrate. A p-side electrode is formed through a diffusio... | 08/26/2003 |
| 6589850 | Method and system for fabricating a bipolar transistor and related structure One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base lay... | 07/08/2003 |
| 6555456 | Method of forming iridium conductive electrode/barrier structure A conductive barrier, useful as a ferroelectric capacitor electrode, having high temperature stability has been provided. This conductive barrier permits the use of iridium (Ir) metal in IC processes involving annealing. Separating silicon substrate from ... | 04/29/2003 |
| 6555457 | Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer. During formation of the contact structure, this thin metal l... | 04/29/2003 |
| 6429111 | Methods for fabricating an electrode structure The electrode structure of the invention includes a p-type Alx Gay In1-x-y N (0ࣘxࣘ1, 0ࣘyࣘ1, x+yࣘ1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the ele... | 08/06/2002 |
| 6380064 | Semiconductor devices and process for producing the same A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrical... | 04/30/2002 |
