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| Number | Title | Issue Date |
| 8105860 | Support with integrated deposit of gas absorbing material for manufacturing microelectronic microoptoelectronic or micromechanical devices The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment th... | 01/31/2012 |
| 8093089 | Methods of manufacturing image sensors including gettering regions Method of manufacturing image sensors having a plurality of gettering regions. In the method, a gate electrode may be formed on a semiconductor substrate. A source/drain region may be formed in the semiconductor substrate to be overlapped with the gate electrode. A ... | 01/10/2012 |
| 8084286 | Solid-state imaging device, camera and method of producing the solid-state imaging device Producing a solid-state imaging device by (1) forming a structure including (a) a substrate having a first impurity with a first concentration, (b) a first conductive type Si layer and (c) a first conductive type impurity layer stacked on one another in that order, ... | 12/27/2011 |
| 8008107 | Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contami... | 08/30/2011 |
| 8003423 | Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is les... | 08/23/2011 |
| 7964430 | Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer dispose... | 06/21/2011 |
| 7943414 | Method for manufacturing SOI substrate An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a... | 05/17/2011 |
| 7910391 | Getter formed by laser-treatment and methods of making same The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a... | 03/22/2011 |
| 7863075 | Method for manufacturing solar cell A manufacturing method of a polycrystalline solar cell is disclosed. A polycrystalline silicon solar cell in accordance with the present invention performs crystallization-annealing amorphous silicon with a metal catalyst so as to reduce a crystallization temperatur... | 01/04/2011 |
| 7575948 | Method for operating photosensitive device A method for operating a photosensitive device is provided. At first, the photosensitive device is provided, which comprising a photo sensor circuit and a photo sensor, where the photo sensor is located above and electrically coupled with the photo sensor circuit, a... | 08/18/2009 |
| 7572663 | Method for manufacturing CMOS image sensor A method for manufacturing a CMOS image sensor is provided. The method can include forming an interlayer dielectric layer on a semiconductor substrate including a gate electrode, photodiode area, and LDD region; selectively removing the interlayer dielectric layer s... | 08/11/2009 |
| 7462506 | Carbon dioxide gettering method for a chip module assembly A chip module assembly includes a CO2 getter exposed through a gas-permeable membrane to a chip cavity of a chip module. One or more chips is/are enclosed within the cavity. The CO2 getter comprises a liquid composition including 1,8-diaza-bicy... | 12/09/2008 |
| 7449358 | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates A method for forming a MEMS device is disclosed, where a final release step is performed just prior to a wafer bonding step to protect the MEMS device from contamination, physical contact, or other deleterious external events. Without additional changes to the MEMS ... | 11/11/2008 |
| 7387952 | Semiconductor substrate for solid-state image pickup device and producing method therefor A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface,... | 06/17/2008 |
| 7374978 | Method of manufacturing semiconductor device A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which i... | 05/20/2008 |
| 7348193 | Hermetic seals for micro-electromechanical system devices The invention is directed to a hermetically sealed device and a method for making such device. The device includes optical, micro-electromechanical, electronic and opto-electronic devices, having a substrate with one or a plurality of optical, opto-electronic, elect... | 03/25/2008 |
| 7327019 | Semiconductor device of a charge storage type According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. ... | 02/05/2008 |
| 7297927 | Fabrication of low leakage-current backside illuminated photodiodes Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As... | 11/20/2007 |
| 7297573 | Methods and apparatus for particle reduction in MEMS devices A method for assembling a micro-electromechanical system (MEMS) device that includes a micro-machine is described. The method comprises forming the micro-machine on a die, the die having a top surface and a bottom surface, providing a plurality of die bonding pedest... | 11/20/2007 |
| 7297630 | Methods of fabricating via hole and trench A method of fabricating a via and a trench is disclosed. A disclosed method comprises: forming a via hole and a trench in a interlayer dielectric layer on a semiconductor substrate where a predetermined device is formed; depositing a thin Hf layer on the substrate; ... | 11/20/2007 |
| 7268339 | Large area semiconductor detector with internal gain A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped semiconductor wafer; and forming a second plurality of top trenches in a top s... | 09/11/2007 |
| 7268084 | Method for treating a substrate A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma spac... | 09/11/2007 |
| 7256386 | Fabrication of low leakage-current backside illuminated photodiodes Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As... | 08/14/2007 |
| 7247575 | Multi-step EBR process for photoresist removal An edge bead removal process is disclosed. The process includes providing a wafer having a feature layer, coating a photoresist on the feature layer, rotating the wafer, and removing an edge bead from the wafer by removing an edge bump portion from the edge bead and... | 07/24/2007 |
| 7238545 | Method for fabricating tandem thin film photoelectric converter A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the ... | 07/03/2007 |
| 7232698 | Method for fabricating CMOS image sensor protecting low temperature oxide delamination A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predeterm... | 06/19/2007 |
| 7186597 | Method of manufacturing transistors A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which i... | 03/06/2007 |
| 7169631 | Silicon and silicon/germanium light-emitting device, methods and systems A light-emitting device and optical communication system based on the light-emitting device is disclosed. The light-emitting device is formed in a float-zone substrate. The light-emitting device includes on the substrate lower surface a reflective layer and on the u... | 01/30/2007 |
| 7160385 | Silicon wafer and method for manufacturing the same A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen... | 01/09/2007 |
| 7135351 | Method for controlling of thermal donor formation in high resistivity CZ silicon The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of for... | 11/14/2006 |
| 7112509 | Method of producing a high resistivity SIMOX silicon substrate The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Prec... | 09/26/2006 |
| 7084048 | Process for metallic contamination reduction in silicon wafers A process for removing a contaminant selected from among copper, nickel, and a combination thereof from a silicon wafer having a surface and an interior. The process comprises cooling the silicon wafer in a controlled atmosphere from a temperature at or above an oxi... | 08/01/2006 |
| 7075002 | Thin-film photoelectric conversion device and a method of manufacturing the same A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting... | 07/11/2006 |
| 7008813 | Epitaxial growth of germanium photodetector for CMOS imagers A method of fabricating a germanium photodetector includes preparing a silicon wafer as a silicon substrate; depositing a layer of silicon nitride on the silicon substrate; patterning and etching the silicon nitride layer; depositing a first germanium layer on the s... | 03/07/2006 |
| 6967114 | Large EL panel and manufacturing method therefor A manufacturing method is disclosed for a large EL panel in which a plurality of EL display panels are used. Each of said plurality of EL display panels are constructed of an EL display device and a sub-transparent substrate. The EL display device includes a base la... | 11/22/2005 |
| 6943051 | Method of fabricating heterojunction photodiodes integrated with CMOS A method in which thin-film p-i-n heterojunction photodiodes are formed by selective epitaxial growth/deposition on pre-designated active-area regions of standard CMOS devices. The thin-film p-i-n photodiodes are formed on active areas (for example n+-dop... | 09/13/2005 |
| 6924510 | Silicon and silicon/germanium light-emitting device, methods and systems A light-emitting device and optical communication system based on the light-emitting device is disclosed. The light-emitting device is formed in a float-zone substrate. The light-emitting device includes on the substrate lower surface a reflective layer and on the u... | 08/02/2005 |
| 6916678 | Surface modification method A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas inc... | 07/12/2005 |
| 6897117 | Method of manufacturing semiconductor device A transistor of a semiconductor device has an increased driving capacity. The semiconductor device has a first gate insulation film formed by a selective oxidation, a second gate insulation film formed by thermal oxidation and a gate electrode formed across the firs... | 05/24/2005 |
| 6897084 | Control of oxygen precipitate formation in high resistivity CZ silicon The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of for... | 05/24/2005 |
