Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 8173529 | Semiconductor device manufacturing method In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta2O5 ... | 05/08/2012 |
| 7875538 | Semiconductor device having schottky junction and method for manufacturing the same A semiconductor device includes: a nitride semiconductor layer including a channel layer, a Schottky electrode that contacts the nitride semiconductor layer and contains indium, and an ohmic electrode that contacts the channel layer. The nitride semiconductor layer ... | 01/25/2011 |
| 7825017 | Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the... | 11/02/2010 |
| 7785995 | Semiconductor buffer structures Pile ups of threading dislocations in thick graded buffer layer are reduced by enhancing dislocation gliding. During formation of a graded SiGe buffer layer, deposition of SiGe from a silicon precursor and a germanium precursor is interrupted one or more times with ... | 08/31/2010 |
| 7767563 | Method of forming a silicide layer on a thinned silicon wafer, and related semiconducting structure A semiconducting structure includes a thinned silicon substrate (110), a silicide layer (120) over the thinned silicon substrate, a metal layer (130) over the silicide layer, a solder interface layer (140) over the metal layer, and a cap ... | 08/03/2010 |
| 7687386 | Method of forming a semiconductor structure having metal migration semiconductor barrier layers A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded... | 03/30/2010 |
| 7419862 | Method of fabricating pseudomorphic high electron mobility transistor Provided is a method of fabricating a pseudomorphic high electron mobility transistor (PHEMT). The method includes the steps of: preparing a substrate including a channel layer and a capping layer that is the uppermost layer; forming a source and a drain on the capp... | 09/02/2008 |
| 7361313 | Methods for uniform metal impregnation into a nanoporous material The methods, systems 400 and apparatus disclosed herein concern metal 150 impregnated porous substrates 110, 210. Certain embodiments of the invention concern methods for producing metal-coated porous silicon substrates 110, 210 that exhi... | 04/22/2008 |
| 7274082 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 09/25/2007 |
| 7273790 | Method for fabricating trench capacitor with insulation collar electrically connected to substrate through buried contact, in particular, for a semiconductor memory cell Fabricating a trench capacitor with an insulation collar in a substrate, which is electrically connected thereto on one side through a buried contact, in particular, for a semiconductor memory cell with a planar selection transistor in the substrate and connected th... | 09/25/2007 |
| 7229903 | Recessed semiconductor device A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A f... | 06/12/2007 |
| 7219415 | Method of manufacturing thin film magnetic head The method of manufacturing a thin film magnetic head is capable of precisely forming a core section with preventing the variation of the write-core head caused by ion milling for removing an electric conductive film and capable of improving yield of products. The m... | 05/22/2007 |
| 7141279 | Transmissive or reflective liquid crystal display and novel process for its manufacture This invention relates to a liquid crystal display with improved contrast ratio, switching performance, reflectivity at the Dmin state and structural integrity, and methods for its manufacture. ... | 11/28/2006 |
| 7141498 | Method of forming an ohmic contact in wide band semiconductor A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction betwee... | 11/28/2006 |
| 7135369 | Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c... | 11/14/2006 |
| 7122451 | Method for fabricating a semiconductor device including exposing a group III-V semiconductor to an ammonia plasma A semiconductor device has an active region composed of a group III–V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potentia... | 10/17/2006 |
| 7122460 | Electromigration barrier layers for solder joints A microelectronic package is disclosed including a microelectronic device, a substrate, and a signaling path coupling the microelectronic device with the substrate. The signaling path includes a conductive material, a solder joint, and a barrier material disposed be... | 10/17/2006 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure.... | 06/06/2006 |
| 6949787 | Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one asp... | 09/27/2005 |
| 6929966 | Method for producing a light-emitting semiconductor component A method for producing a light-emitting semiconductor component having a thin-film layer sequence (14), in which a photon-emitting active zone (17) is formed. The thin-film layer sequence (14) is formed on a growth substrate. A reflection contac... | 08/16/2005 |
| 6924218 | Sulfide encapsulation passivation technique A method for passivating a III-V material Schottky layer of a field effect transistor. The transistor has a gate electrode in Schottky contact with a gate electrode contact region of the Schottky layer. The gate electrode is adapted to control a flow of carriers bet... | 08/02/2005 |
| 6884704 | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The ... | 04/26/2005 |
| 6852615 | Ohmic contacts for high electron mobility transistors and a method of making the same A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HE... | 02/08/2005 |
| 6838744 | Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method therefor are provided, the semiconductor device having a good reverse recovery characteristic, and having no reduction in breakdown voltage because no defect occurs in the upper main surface of a Si substrate even wh... | 01/04/2005 |
| 6812070 | Epitaxially-grown backward diode A method of epitaxially growing backward diodes and diodes grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thin, highly doped layer at the p-n juncti... | 11/02/2004 |
| 6797586 | Silicon carbide schottky barrier diode and method of making A Schottky barrier diode and process of making is disclosed. The process forms a metal contact pattern in masked areas on a silicon carbide wafer. A preferred embodiment includes on insulating layer that is etched in the windows of the mask. An inert edge terminatio... | 09/28/2004 |
| 6787826 | Heterostructure field effect transistor A high electron mobility transistor is constructed with a substrate, a lattice-matching buffer layer formed on the substrate, and a heavily doped p-type barrier layer formed on the buffer layer. A spacer layer is formed on the barrier layer, and a channel layer is f... | 09/07/2004 |
| 6777277 | Manufacturing method of Schottky barrier diode A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the ... | 08/17/2004 |
| 6770548 | Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of ... | 08/03/2004 |
| 6762083 | Method for manufacturing heterojunction field effect transistor device A method for manufacturing a hetero-junction field effect transistor (HFET) device, which includes sequentially forming a non-doped GaN semiconductor layer and an AlGaN semiconductor layer on a substrate, separating devices from each other by etching the substrate, ... | 07/13/2004 |
| 6737305 | Thin film transistor manufacture method A Thin Film Transistor (TFT) manufacture method, comprising manufacture of a gate, a gate isolation layer, a channel layer, and a source/drain. Wherein, the manufacture of the channel layer comprises: forming a first a-Si layer by using a low deposition rate (LDR) (... | 05/18/2004 |
| 6689673 | Method for forming a gate with metal silicide The proposed invention is related to a method for forming a gate with metal silicide. In short, the proposed method comprises the following steps: providing a substrate; forming a first dielectric layer on the substrate; forming a polysilicon layer on the... | 02/10/2004 |
| 6683362 | Metal-semiconductor diode clamped complementary field effect transistor integrated circuits The subject invention relates to a metal-semiconductor diode clamped semiconductor device and method for producing such device. A specific embodiment of the subject invention utilizes one or more Schottky barriers at, for example, the drain and/or source ... | 01/27/2004 |
| 6627473 | Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereof A high electron mobility transitor has a channel layer overlain by an electron supply layer held in contact with a gate electrode, and source/drain electrodes form ohmic contact together with cap layers, and resistive etching stopper are inserted between ... | 09/30/2003 |
| 6610999 | Multiple stage high power diode A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on ... | 08/26/2003 |
| 6576524 | Method of making a prismatic capacitor A method of making a flat capacitor includes forming at least one recess on an inside surface of a metal foil blank, leaving a surrounding peripheral flange. A coating performing as an electrode of the capacitor is applied to the inside surface of the met... | 06/10/2003 |
| 6569751 | Low via resistance system A method of forming a metallization interconnection system within a via. A first liner layer of titanium is deposited to a first thickness in the following manner. A substrate containing the via is placed within an ion metal plasma deposition chamber that... | 05/27/2003 |
| 6552411 | DC or AC electric field assisted anneal A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate a... | 04/22/2003 |
| 6548386 | Method for forming and patterning film Metallic films are formed on a silicon substrate on which an insulation film and a conductive portion are exposed. The metallic films include a first metallic film directly contacting the insulation film and the conductive portion and a second metallic fi... | 04/15/2003 |
| 6544674 | Stable electrical contact for silicon carbide devices An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3 SiC2 that is deposited on the silicon carbide com... | 04/08/2003 |
