Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 6562705 | Method and apparatus for manufacturing semiconductor element A laser heating apparatus for forming an electrode on one surface of an Si chip provided on an Si wafer, thereby producing a semiconductor element, comprises a high vacuum chamber having a light transmission window, an XY table contained in the high vacuu... | 05/13/2003 |
| 6448167 | Process flow to reduce spacer undercut phenomena A process for forming a composite insulator spacer on the sides of a MOSFET gate structure, wherein the underlying component of the composite insulator spacer is comprised of a thin silicon oxide layer obtained via chemical vapor deposition procedures usi... | 09/10/2002 |
| 6426280 | Method for doping spherical semiconductors A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains ... | 07/30/2002 |
| 6399480 | Methods and arrangements for insulating local interconnects for improved alignment tolerance and size reduction At least one patterned dielectric layer is provided within a transistor arrangement to prevent a local interconnect from electrically contacting,the gate conductor due to misalignments during the damascene formation of etched openings used in forming loca... | 06/04/2002 |
| 6090722 | Process for fabricating a semiconductor structure having a self-aligned spacer A self-aligned dielectric spacer is etched by providing capped gate structure along a second layer of dielectric material located above the gate cap material. Dopant material at an increased doping level is provided in the second layer of dielectric mater... | 07/18/2000 |
| 6083833 | Method for forming conductive film for semiconductor device A method for forming a conductive film for a semiconductor device wherein a conductive film is formed on each wafer loaded in a boat of a vertical furnace of a low pressure chemical vapor deposition apparatus provided with a chamber, a reaction tube in a ... | 07/04/2000 |
| 5223452 | Method and apparatus for doping silicon spheres A method and apparatus for doping silicon spheres (48) with a solid phosphorous source (41, 42) is disclosed. Two solid sheets (41, 42) of solid phosphorous source are held in a chamber (32) and aligned substantially parallel to one another for holding th... | 06/29/1993 |
| 5049524 | Cd diffusion in InP substrates A process for diffusing Cd into an InP substrate comprising: a. pre-heating a sealed tube containing red P and Cd3 P2 at the opening of a diffusion furnace; b. effecting the diffusion within the diffusion furnace; and c. furnace cooling the se... | 09/17/1991 |
| 4742022 | Method of diffusing zinc into III-V compound semiconductor material Method of diffusing zinc into gallium arsenide and aluminum gallium arsenide. A wafer of gallium arsenide or aluminum gallium arsenide is placed in close proximity to a quantity of granular zinc gallium arsenide. The assemblage is heated in an open-tube f... | 05/03/1988 |
| 4725565 | Method of diffusing conductivity type imparting material into III-V compound semiconductor material Method of diffusing sulfur into gallium arsenide without degrading the surface of the gallium arsenide. A gallium arsenide wafer is placed in close proximity to a quantity of powdered gallium sulfide intermixed with powdered gallium arsenide. The assembla... | 02/16/1988 |
| 4559217 | Method for vacuum baking indium in-situ A method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vacuum in an open ended quartz ampoule to a temperature ... | 12/17/1985 |
| 4415385 | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel A dual-enclosure semi-closed diffusion wherein an outer enclosure is evacuatable and an inner enclosure has a limited aperture, the inner enclosure includes a diffusion vessel having an aperture and a baffle for partially blocking the aperture to leave th... | 11/15/1983 |
| 4266990 | Process for diffusion of aluminum into a semiconductor A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube fo... | 05/12/1981 |
| 4210473 | Process for producing a semiconductor device Disclosed is a process for producing a semiconductor device, especially, a high speed silicon gate field effect semiconductor device, by diffusing an impurity substance, such as arsenic or phosphorus, into a polycrystalline silicon layer to be converted i... | 07/01/1980 |
| 4193826 | Vapor phase diffusion of aluminum with or without boron A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concent... | 03/18/1980 |
| 4149915 | Process for producing defect-free semiconductor devices having overlapping high conductivity impurity regions A process for fabricating devices having overlapping heavily doped impurity regions of opposite conductivity wherein the formation of crystallographic faults emanating from the overlapping regions is eliminated. It has been discovered that crystallographi... | 04/17/1979 |
| 4129090 | Apparatus for diffusion into semiconductor wafers In diffusing an impurity into semiconductor wafers within a silica tube by the use of a heating furnace, a method of diffusion involves the following steps: the semiconductor wafers are inserted into the tube from an inlet thereof, the inlet is sealed by ... | 12/12/1978 |
| 4105479 | Preparation of halogen doped mercury cadmium telluride Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclos... | 08/08/1978 |
| 4089714 | Doping mercury cadmium telluride with aluminum or silicon A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a tempe... | 05/16/1978 |
| 4086106 | Halogen-doped Hg,Cd,Te Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclos... | 04/25/1978 |
| 4064621 | Cadmium diffused Pb1-x Snx Te diode laser A higher power infrared Pb1-x Snx Te diode laser that is tunable at this high output power at all wavelengths from 6.5 - 32 microns, particularly 6.5 - 9 microns. The diode laser has a P-type laser cavity with a degenerate carrier co... | 12/27/1977 |
| 4049478 | Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device A substantially square N-type impurity distribution profile in a silicon substrate produces much superior dc and ac characteristics in PN junction devices than can be expected from the usual phosphorus distribution profile. Such a square profile is obtain... | 09/20/1977 |
| 3984267 | Process and apparatus for diffusion of semiconductor materials Apparatus for semi-sealed diffusion of semiconductor materials includes a quartz tube with a quartz stopper at one end to facilitate the loading and unloading of semiconductor materials, the other end of the quartz tube having an inlet passage with a quar... | 10/05/1976 |
| 3979232 | Mercury cadmium telluride annealing procedure The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is heat treated in the presence of mercury and cadmium vapor.... | 09/07/1976 |
| 3963540 | Heat treatment of mercury cadmium telluride The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is slowly cooled from a temperature near the solidus temperature to room temperature in the presence of constituent va... | 06/15/1976 |
| 3954518 | Method for reducing compositional gradients in mercury cadmium telluride Compositional gradients in a body of mercury cadmium telluride are removed by heat treating the mercury cadmium telluride in a closed container at a temperature which is less than the solidus temperature. The constituent vapor pressure within the closed c... | 05/04/1976 |
| 3948695 | Method of diffusing an impurity into semiconductor wafers A method of diffusing an impurity into semiconductor wafers, wherein the semiconductor wafers and sources of the impurity are arranged in a pressure-reduced vessel or a vacuum vessel with their surfaces opposed, and the vessel is heated to deposit the imp... | 04/06/1976 |
| 3948696 | Method of diffusion into semiconductor wafers In diffusing an impurity into semiconductor wafers within a silica tube by the use of a heating furnace, a method of diffusion involves the following steps: the semiconductor wafers are inserted into the tube from an inlet thereof, the inlet is sealed by ... | 04/06/1976 |
| 3939017 | Process for depositing the deposition agent on the surface of a number of semiconductor substrates A novel process for depositing and diffusing an impurity on and into the surface of a number of semiconductor wafers placed in parallel on a quartz boat. The impurity source is formed as a plurality of long and slender bars or a unitary tunnel-shaped elem... | 02/17/1976 |
