Did You Know...
...that after Walter Hunt patented the safety pin in 1849, he sold the rights to it for $400?
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7507649 | Method for electrical doping a semiconductor material with Cesium The invention relates to a method for doping a semiconductor material with Cesium, wherein said semiconductor material is exposed to a cesium vapor. Said Cesium vapor is provided by Cesium sublimation from a Cesium alloy. There is also provided an organic light emit... | 03/24/2009 |
| 7323228 | Method of vaporizing and ionizing metals for use in semiconductor processing Techniques for vaporizing and handling a vaporized metallic element or metallic element salt with a heated inert carrier gas for further processing. The vaporized metallic element or salt is carried by an inert carrier gas heated to the same temperature as the vapor... | 01/29/2008 |
| 7244513 | Stain-etched silicon powder The present invention is for a porous silicon powder comprising silicon particles wherein the outermost layers of said particles are porous. The present invention is also directed to a method of making this porous silicon powder using a stain etch method. The presen... | 07/17/2007 |
| 7160811 | Laminated silicate glass layer etch stop method for fabricating microelectronic product A method for fabricating a microelectronic fabrication employs an undoped silicate glass layer as an etch stop layer when etching a doped silicate glass layer with an anhydrous hydrofluoric acid etchant. The method is particularly useful for forming a patterned sali... | 01/09/2007 |
| 6825104 | Semiconductor device with selectively diffused regions The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first majo... | 11/30/2004 |
| 6774012 | Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall An improved furnace system and method is provided to substantially minimize, if not eliminate, ambient air from entering a heated chamber of the furnace system during a critical processing step. The furnace system can be used in, for example, an oxidation step where... | 08/10/2004 |
| 6562705 | Method and apparatus for manufacturing semiconductor element A laser heating apparatus for forming an electrode on one surface of an Si chip provided on an Si wafer, thereby producing a semiconductor element, comprises a high vacuum chamber having a light transmission window, an XY table contained in the high vacuu... | 05/13/2003 |
| 6461947 | Photovoltaic device and making of the same To form an impurity diffusion layer on only one side of a semiconductor substrate at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is perfomed on them, or at least ... | 10/08/2002 |
| 6461948 | Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently ... | 10/08/2002 |
| 6426280 | Method for doping spherical semiconductors A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains ... | 07/30/2002 |
| 6426291 | Method of co-deposition to form ultra-shallow junctions in MOS devices using electroless or electrodeposition A method of forming ultra-shallow source/drain junctions in MOS devices by co-depositing cobalt or nickel with an n or p-type dopant following a seeding step. The co-deposition of cobalt or nickel with the dopant is done either via an electroless or an el... | 07/30/2002 |
| 6143633 | In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon A dendritic web formation process and apparatus for diffusing dopant impurities into a growing dendritic crystal web to produce photovoltaic cells. A solid dopant diffusion source is arranged in a holder mounted in a vertical thermal element either within... | 11/07/2000 |
| 6110276 | Method for making n-type semiconductor diamond A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B compound, both, are used at once. After doping, a diamond ... | 08/29/2000 |
| 5972784 | Arrangement, dopant source, and method for making solar cells Disclosed is an arrangement, dopant source and method used in the fabrication of photocells that minimize handling of cell wafers and involve a single furnace step. First, dopant sources are created by depositing selected dopants onto both surfaces of sou... | 10/26/1999 |
| 5926727 | Phosphorous doping a semiconductor particle A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphor... | 07/20/1999 |
| 5866472 | Direct gas-phase doping of semiconductor wafers using an organic dopant source A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process m... | 02/02/1999 |
| 5851909 | Method of producing semiconductor device using an adsorption layer An impurity adsorption layer is formed on a substrate surface and solid-phase thermal diffusion is carried out to form source and drain regions for a metal-insulator-semiconductor field-effect-transistor having lightly doped drain structure or double dope... | 12/22/1998 |
| 5851906 | Impurity doping method In order to dope impurities selectively at low temperature where the resist can be used, the invention presents an impurity doping method capable of performing not only cleaning process but also doping process at low temperature where the resist can be us... | 12/22/1998 |
| 5763320 | Boron doping a semiconductor particle A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dri... | 06/09/1998 |
| 5656541 | Low temperature P2 O5 oxide diffusion source The present invention relates to a solid low temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 5 and R i... | 08/12/1997 |
| 5635422 | Diffusing dopants into a semiconductor wafer Dopants from a diffusion source (16) are diffused into a product wafer (14) to form a uniform doping concentration within the product wafer (14). The source (16) has a thermal conductivity that is approximately equal to a thermal conductivity of the wafer... | 06/03/1997 |
| 5629234 | High temperature phosphorous oxide diffusion source The present invention relates to a solid high temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 3 and R ... | 05/13/1997 |
| 5550082 | Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing The present invention is, in part, a new process for dopant diffusion, both p-type (e.g., B) and n-type (e.g., P, As), into silicon wafers, using rapid thermal processing (RTP). It uses a surface layer of a new planar dopant as an active dopant source. Su... | 08/27/1996 |
| 5223452 | Method and apparatus for doping silicon spheres A method and apparatus for doping silicon spheres (48) with a solid phosphorous source (41, 42) is disclosed. Two solid sheets (41, 42) of solid phosphorous source are held in a chamber (32) and aligned substantially parallel to one another for holding th... | 06/29/1993 |
| 5208185 | Process for diffusing boron into semiconductor wafers In a boron diffusion process, a multiplicity of semiconductor wafers and pyrolytic boron nitride dopant disks are placed in a diffusion tube kept in an inert atmosphere at a high temperature, and boron diffusion is performed with hydrogen injection, the i... | 05/04/1993 |
| 4929572 | Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily pre... | 05/29/1990 |
| 4857480 | Method for diffusing P-type material using boron disks A method of depositing P-type material on one or more semiconductor substrate wafers in a MOSFET fabrication process, utilizing boron disks. The boron disks are passivated by exposing them to nitrogen gas within a reaction chamber, and then subsequently o... | 08/15/1989 |
| 4820656 | Method for producing a p-doped semiconductor region in an n-conductive semiconductor body A method for producing a p-doped semiconductor region in an n-conductive semiconductor body by means of diffusion using a combination of both aluminum and boron as dopants. The semiconductor body is positioned within a hollow silicon member which itself i... | 04/11/1989 |
| 4800175 | Phosphorous planar dopant source for low temperature applications A boron-containing heterocyclic compound prepared by reacting a primary amine of ammonia with an alkylene oxide or epoxide and then reacting concurrently or subsequently this reaction intermediate with a boric acid. This boron-containing heterocyclic comp... | 01/24/1989 |
| 4798764 | Arsenate dopant sources and method of making the sources New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500°-1400° C. to relea... | 01/17/1989 |
| 4749615 | Semiconductor dopant source Semiconductor dopant sources are prepared by mixing particles of elemental silicon and at least one dopant oxide and heating the mixture to a temperature sufficient to initiate a reduction reaction while excluding external oxygen sources from affecting th... | 06/07/1988 |
| 4742022 | Method of diffusing zinc into III-V compound semiconductor material Method of diffusing zinc into gallium arsenide and aluminum gallium arsenide. A wafer of gallium arsenide or aluminum gallium arsenide is placed in close proximity to a quantity of granular zinc gallium arsenide. The assemblage is heated in an open-tube f... | 05/03/1988 |
| 4734386 | Boron nitride dopant source for diffusion doping A solid body formed by the chemical vapor-phase deposition of, for example, boron nitride is used as a solid dopant source for diffusion doping of semiconductor substrates in place of conventional sintered bodies of boron nitride. By virtue of the extreme... | 03/29/1988 |
| 4725565 | Method of diffusing conductivity type imparting material into III-V compound semiconductor material Method of diffusing sulfur into gallium arsenide without degrading the surface of the gallium arsenide. A gallium arsenide wafer is placed in close proximity to a quantity of powdered gallium sulfide intermixed with powdered gallium arsenide. The assembla... | 02/16/1988 |
| 4661177 | Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources Doping of a semiconductor wafer is accomplished by placing the wafer in close proximity to a solid planar dopant source and rapidly heating the combination to a high temperature for a short time in a rapid thermal processing apparatus.... | 04/28/1987 |
| 4592793 | Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises: (a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which... | 06/03/1986 |
| 4588455 | Planar diffusion source Planar diffusion sources are provided wherein the source is a wafer of inert material, preferably silicon or silicon dioxide and wherein the wafer acts as a substrate for a surface coating comprising a salt, preferably the oxide, of the dopant element. An... | 05/13/1986 |
| 4526826 | Foam semiconductor dopant carriers New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, ... | 07/02/1985 |
| 4525429 | Porous semiconductor dopant carriers New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon,... | 06/25/1985 |
| 4415385 | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel A dual-enclosure semi-closed diffusion wherein an outer enclosure is evacuatable and an inner enclosure has a limited aperture, the inner enclosure includes a diffusion vessel having an aperture and a baffle for partially blocking the aperture to leave th... | 11/15/1983 |
