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| Number | Title | Issue Date |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7018728 | Boron phosphide-based semiconductor device and production method thereof A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (... | 03/28/2006 |
| 6825104 | Semiconductor device with selectively diffused regions The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first majo... | 11/30/2004 |
| 6770540 | Method of fabricating semiconductor device having L-shaped spacer A method of fabricating a semiconductor device having an L-shaped spacer is provided. A buffer dielectric layer, a first dielectric layer, and a second dielectric layer are sequentially formed on the surface of the gate electrode and on the semiconductor substrate. ... | 08/03/2004 |
| 6632721 | Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by surface roughening, an impurity is introduced into the polycr... | 10/14/2003 |
| 6516743 | Method and apparatus diffusing zinc into groups III-V compound semiconductor crystals An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing... | 02/11/2003 |
| 6413844 | Safe arsenic gas phase doping A method is described for safe gas phase doping a semiconductor with arsenic. The substrate including a semiconductor structure is exposed to arsine at elevated temperatures within a reaction chamber. Thereafter, prior to opening the reaction chamber, a s... | 07/02/2002 |
| 6214708 | Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing... | 04/10/2001 |
| 6194259 | Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants A method of forming a retrograde channel concentration profile in the NMOS region of a semiconductor device and forming a shallow LDD regions in a PMOS region of the semiconductor device. The retrograde channel concentration profile in the NMOS regions is... | 02/27/2001 |
| 6090690 | Direct gas-phase doping of semiconductor wafers using an organic dopant source A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process m... | 07/18/2000 |
| 5824596 | POCl3 process flow for doping polysilicon without forming oxide pillars or gate oxide shorts In a method of introducing phosphorous from phosphorous oxychloride (POCl3) into an undoped gate polysilicon region formed as part of an integrated circuit structure, an initial MOS structure is developed utilizing conventional techniques throu... | 10/20/1998 |
| 5599735 | Method for doped shallow junction formation using direct gas-phase doping Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping process... | 02/04/1997 |
| 5543356 | Method of impurity doping into semiconductor A method of impurity doping into a semiconductor, which comprises irradiating energy rays such as excimer laser beam (or UV-rays) to a predetermined region of a hydrogen terminated silicon surface to remove hydrogen atom layers terminating the silicon sur... | 08/06/1996 |
| 5506186 | Method of manufacturing an optoelectronic device The invention relates to a method of manufacturing an optoelectronic device. An indium phosphide part of a semiconductor body is contacted either directly or indirectly through a ternary or quaternary layer by means of a zinc diffusion. In order to improv... | 04/09/1996 |
| 5489550 | Gas-phase doping method using germanium-containing additive A germanium-containing compound may be used as an additive to dopant source gas to improve the direct GPD (Gas-Phase Doping) processes. This invention involves a gas-phase doping method for semiconductor wafers, including the steps of providing a semicond... | 02/06/1996 |
| 5418184 | Method of manufacturing a semiconductor device in which dopant atoms are provided in a semiconductor body A method of manufacturing a semiconductor device includes the step of providing a dopant (4) near a surface (2) of a semiconductor body (1) in a deposition step, after which in a diffusion step the dopant (4) is diffused into the semiconductor body (1) by... | 05/23/1995 |
| 5401686 | Method of uniformly diffusing impurities into semiconductor wafers The temperature of the front heater is set to a higher value than the set temperature of the center heater and the temperature of the rear heater is set to a lower value than the set temperature of the center heater to thereby provide such a temperature g... | 03/28/1995 |
| 5387545 | Impurity diffusion method An impurity diffusion method which can control a surface atomic concentration from a low to a high surface atomic concentration with a good uniformity is provided. Natural oxide is removed from the surface of a semiconductor substrate with a deoxidizing a... | 02/07/1995 |
| 5324684 | Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure A technique for doping silicon material or other semiconductors uses gas phase dopant sources under reduced pressure in a radiantly heated, cold-wall reactor. The technique is applied to the automated integrated circuit manufacturing techniques being adop... | 06/28/1994 |
| 5316977 | Method of manufacturing a semiconductor device comprising metal silicide According to this invention, a method of manufacturing a semiconductor device includes the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a transitition layer c... | 05/31/1994 |
| 5308789 | Method of preparing diffused silicon device substrate In a method of preparing a diffused silicon device substrate for use in the fabrication of a MOS power device, a drive-in diffusion step is followed by a thermal donor formation heat treatment which is achieved by heating the silicon device substrate at a... | 05/03/1994 |
| 5208185 | Process for diffusing boron into semiconductor wafers In a boron diffusion process, a multiplicity of semiconductor wafers and pyrolytic boron nitride dopant disks are placed in a diffusion tube kept in an inert atmosphere at a high temperature, and boron diffusion is performed with hydrogen injection, the i... | 05/04/1993 |
| 5098851 | Fabricating a semiconductor photodetector by annealing to smooth the PN junction A semiconductor photodetector is disclosed which comprises a pn junction formed in a semiconductor substrate and a pair of electrodes for applying a reverse bias to the pn junction, in which at least a part of the junction plane of the pn junction has bee... | 03/24/1992 |
| 4939103 | Method of diffusing plurality of dopants simultaneously from vapor phase into semiconductor substrate This invention relates to the manufacture of semiconductor devices and more particularly to a method of diffusing an impurity layer into a substrate. The disclosed method comprises the steps of placing a body of semiconductor in a vacuum doping chamber, e... | 07/03/1990 |
| 4820656 | Method for producing a p-doped semiconductor region in an n-conductive semiconductor body A method for producing a p-doped semiconductor region in an n-conductive semiconductor body by means of diffusion using a combination of both aluminum and boron as dopants. The semiconductor body is positioned within a hollow silicon member which itself i... | 04/11/1989 |
| 4588454 | Diffusion of dopant into a semiconductor wafer A process for doping a semiconductor material is performed during a deposition phase in a plurality of steps, first at a relatively low temperature to form a high concentration glass formation layer of the dopant on a semiconductor wafer at a high rate, a... | 05/13/1986 |
| 4514440 | Spin-on dopant method A single step method for boron dopant diffusion implementing both deposition and drive-in diffusions in one furnace process is provided. By using a spin-on dopant in a diffusion furnace with pyrogenic steam and thermal ramping capabilities, sheet resistiv... | 04/30/1985 |
| 4381213 | Partial vacuum boron diffusion process A method is presented for the uniform and reproducible boron doping of many closely spaced silicon wafers in a single batch, wherein a particular process sequence and specified ranges of reactant gas compositions, flow rate and pressure are utilized. The ... | 04/26/1983 |
| 4313773 | Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB6 solid source A method for doping silicon bodies by the diffusion of boron into the bodies is described. The method is an improvement of processes where the silicon bodies are exposed in a first heating process to a gas mixture containing a predetermined boron quantity... | 02/02/1982 |
| 4280858 | Method of manufacturing a semiconductor device by retarding the diffusion of zinc or cadmium into a device region A semiconductor device and a method for manufacturing the semiconductor device are disclosed for forming an abrupt and accurately positioned p-n junction between a substrate and a substrate-adjoining region. This is achieved in accordance with the present... | 07/28/1981 |
| 4266990 | Process for diffusion of aluminum into a semiconductor A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube fo... | 05/12/1981 |
| 4264381 | Fabrication of injection lasers utilizing a porous host diffusion layer Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is... | 04/28/1981 |
| 4234361 | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes constructed in accordance with the invention are capable of de... | 11/18/1980 |
| 4049478 | Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device A substantially square N-type impurity distribution profile in a silicon substrate produces much superior dc and ac characteristics in PN junction devices than can be expected from the usual phosphorus distribution profile. Such a square profile is obtain... | 09/20/1977 |
