Class 438/562 - Organic source

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the solid dopant source material is composed
No. of patents: 20
Last issue date: 10/14/2008

Number	Title	Issue Date
7435668	Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impuri...	10/14/2008
7247548	Doping method and semiconductor device using the same The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is condu...	07/24/2007
7203064	Heat exchanger with cooling channels having varying geometry A device may include an integrated circuit chip and channels to carry a coolant. The channels may be proximate to an upper surface of the integrated circuit chip, and the channels may extend along a length of the integrated circuit chip. A density of the channels ma...	04/10/2007
7160754	P-type OFET with fluorinated channels The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surfac...	01/09/2007
6989288	Organic EL display device having organic soluble derivative layer An organic EL display device includes first and second electrodes with a light-emitting layer interposed therebetween and an organic soluble derivative layer arranged between the first electrode and the light-emitting layer, wherein the organic soluble derivative la...	01/24/2006
6929950	Microprojectile delivery system and particulate product The invention relates to a particulate product comprising at least one microprojectile; characterized in that the or at least one of the microprojectiles comprises silicon. The invention also relates to devices and components used in the microprojectile implantation...	08/16/2005
6232207	Doping process for producing homojunctions in semiconductor substrates In doping process for producing homojunctions in a semiconductor substrate, and the semiconductor substrate, dopants penetrate by way of diffusion employing an ultraviolet light source. A mask is introduced between the light source and the semiconductor w...	05/15/2001
5855962	Flowable spin-on insulator A spin on insulating coating with ionic barrier properties is formed on a substrate, by mixing a P or B containing material such as phosphazene or borazine with a solution of silsesquioxane, spin coating on a substrate to form a film of pre-determined thi...	01/05/1999
5478776	Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate The invention is directed to a process for fabricating a device with a junction thereon with a depth of 0.06 microns or less. The substrate also has a silicon dioxide material thereon. A dopant source is applied over a junction on the substrate. The subst...	12/26/1995
5094976	Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer A dopant film contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive. Releasable sheets sandwich the dopant film. The dopant film permits automated alt...	03/10/1992
4619719	Process for forming a doped oxide film and composite article A process for forming a doped oxide film suitable for doping a semiconductor wafer substrate material and composite article. A silicon tetra-alkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. ...	10/28/1986
4605450	Process for forming a doped oxide film and doped semiconductor A process for forming a doped oxide film and a doped semiconductor suitable for electronic applications wherein a silicon tetraalkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorgano...	08/12/1986
4578283	Polymeric boron nitrogen dopant A polymeric borazole is produced by reacting BCl3 and an amine at temperatures between -60° C. and -5° C. in an inert solvent to form an intermediate triaminoborane, and then further polymerizing the intermediate after removal of the amine hy...	03/25/1986
4571366	Process for forming a doped oxide film and doped semiconductor A process for forming a doped oxide film and a doped semiconductor suitable for electronic applications wherein a silicon tetraalkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorgano...	02/18/1986
4490192	Stable suspensions of boron, phosphorus, antimony and arsenic dopants Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than ab...	12/25/1984
4350541	Doping from a photoresist layer A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurit...	09/21/1982
4251285	Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from clear solution derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N dopant compound by partial hydrolysis and polymerization. Th...	02/17/1981
4190458	Metal-silica solution for forming films on semiconductor surfaces An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having...	02/26/1980
4038111	Method for diffusion of aluminium The invention relates to a method for diffusing aluminium into a substrate by painting. According to this method, aluminium isopropylate is dissolved in ethoxyethanol at the maximum solubility. This solution is uniformly coated onto a substrate and a diff...	07/26/1977
3986905	Process for producing semiconductor devices with uniform junctions In a high temperature solid-solid diffusion process for diffusing impurities into a semiconductor body from a dopant source material, semiconductor surface attack is prevented by the presence of a layer comprising particles of a material substantially ine...	10/19/1976

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Class 438/562 - Organic source