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| Number | Title | Issue Date |
| 7326596 | High voltage power device with low diffusion pipe resistance A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of t... | 02/05/2008 |
| 7190250 | Encapsulation with oxide bond to borosilicate mixture Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide inte... | 03/13/2007 |
| 7026230 | Method for fabricating a memory device The present invention is a method for fabricating a memory device. In one embodiment, an impurity concentration is created in a semiconductor substrate of a memory device. An annealing process is then performed. A second impurity concentration is created in a second... | 04/11/2006 |
| 6984565 | Method of manufacturing a semiconductor device A first insulating film is formed on a base substrate, then a second insulating film is formed on the first insulating film, the second insulating film having a relative permittivity higher than that of the first insulating film. A gate electrode is formed on the se... | 01/10/2006 |
| 6875676 | Methods for producing a highly doped electrode for a field effect transistor A highly localized diffusion barrier is incorporated into a polysilicon line to allow the doping of the polysilicon layer without sacrificing an underlying material layer. The diffusion barrier is formed by depositing a thin polysilicon layer and exposing the layer ... | 04/05/2005 |
| 6825104 | Semiconductor device with selectively diffused regions The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first majo... | 11/30/2004 |
| 6821875 | Low area metal contacts for photovoltaic devices In a method for forming a contact on semiconductor surface, a crystalline silicon surface is first oxidized, following which an aluminium layer is deposited onto the oxide layer. A layer of amorphous silicon is then deposited onto the aluminium layer. The structure ... | 11/23/2004 |
| 6815229 | In situ monitoring of sheet resistivity of silicides during rapid thermal annealing using electrical methods A system and method for analyzing sheet resistivity of a layer on a wafer employing electrical methods and for controlling rapid thermal annealing (RTA) of the layer is provided. The system includes components for performing RTA on the layer and components for analy... | 11/09/2004 |
| 6642119 | Silicide MOSFET architecture and method of manufacture The present invention relates to a method of forming a transistor and a transistor structure. The invention comprises forming the transistor using a double silicide process which reduces resistance and reduces the floating-body-effect when employed in con... | 11/04/2003 |
| 6461947 | Photovoltaic device and making of the same To form an impurity diffusion layer on only one side of a semiconductor substrate at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is perfomed on them, or at least ... | 10/08/2002 |
| 6458693 | Method of manufacturing a semiconductor device A semiconductor device which can reduce contact resistance, is disclosed. A semiconductor device according to the present invention includes a lower conductor pattern and an upper conductor pattern. The lower conductor pattern is in contact with the upper... | 10/01/2002 |
| 6380055 | Dopant diffusion-retarding barrier region formed within polysilicon gate layer A diffusion-retarding barrier region is incorporated into the gate electrode to reduce the downward diffusion of dopant toward the gate dielectric. The barrier region is a nitrogen-containing diffusion retarding barrier region formed between two separatel... | 04/30/2002 |
| 6365493 | Method for antimony and boron doping of spherical semiconductors A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains ... | 04/02/2002 |
| 6340535 | Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity, a ZnSe crystal substrate prepared by this heat treatment and a light-emitting device using the ZnSe crystal substrate, in particu... | 01/22/2002 |
| 6329273 | Solid-source doping for source/drain to eliminate implant damage A method of manufacturing a flash memory device in which minimal gate edge lifting is accomplished by minimally oxidizing the gate stack and exposed surface of the substrate, anisotropically etching the layer of oxide from the substrate, forming a doped s... | 12/11/2001 |
| 6300228 | Multiple precipitation doping process A multiple precipitation doping process for doping a semiconductor substrate (30) starts with forming an amorphous region (32) in the substrate (30). Through multiple laser exposures, multiple dopant precipitation films (52, 53) are formed on correspondin... | 10/09/2001 |
| 6238986 | Formation of junctions by diffusion from a doped film at silicidation High integrity shallow source/drain junctions are formed employing cobalt silicide contacts. A layer of cobalt and a cap layer of titanium or titanium nitride are deposited on a substrate above intended source/drain regions, followed by silicidation. Embo... | 05/29/2001 |
| 6200872 | Semiconductor substrate processing method A purchased silicon substrate 10 is subjected to D-HF treatment, SC-1 treatment, etc. to expose the surface of the silicon substrate 10. Then, the silicon substrate 10 having the surface exposed and containing grown-in defects 12 and micro oxygen precipit... | 03/13/2001 |
| 6180457 | Method of manufacturing non-volatile memory device A method of manufacturing a non-volatile memory device is provided. According to an aspect of this method, an isolation layer is formed on a semiconductor substrate including a cell array part and a peripheral circuit part. A floating gate pattern is form... | 01/30/2001 |
| 5902135 | Method for removing crystal defects in silicon wafers A method of removing vacancies in the crystal lattice of silicon wafers is provided. In particular, silicon wafers obtained from drawn rods have significantly higher defect densities in the central region as compared to the outer peripheries of the wafers... | 05/11/1999 |
| 5801087 | Method of forming improved contacts from polysilicon to siliconor other polysilicon layers The method of the present invention introduces a method of forming conductively doped contacts on a supporting substrate in a semiconductor device that minimizes the lateral out-diffusion of the conductive dopants and also provides for a low resistive con... | 09/01/1998 |
| 5786605 | Semiconductor device produced by a single furnace cycle diffusion and oxidation process A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then rampe... | 07/28/1998 |
| 5753530 | Impurity doping method with diffusion source of boron-silicide film A solid phase diffusion process using boron silicide film as diffusion source to improve controllability of diffusion of boron impurity into a silicon substrate in order to achieve a shallow junction. The process includes: cleaning the surface of a Si sub... | 05/19/1998 |
| 5624867 | Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology A low temperature process for forming palladium silicided shallow junctions in which ions are implanted into a palladium or a palladium silicide layer over a silicon substrate. The impurities are driven into the silicon substrate during the formation or r... | 04/29/1997 |
| 5543356 | Method of impurity doping into semiconductor A method of impurity doping into a semiconductor, which comprises irradiating energy rays such as excimer laser beam (or UV-rays) to a predetermined region of a hydrogen terminated silicon surface to remove hydrogen atom layers terminating the silicon sur... | 08/06/1996 |
| 5510271 | Processes for producing low cost, high efficiency silicon solar cells Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime ͌ and permit selective adjustment of the depth of the diffused ... | 04/23/1996 |
| 5496744 | Method of fabricating complementary poly emitter transistors In a method of manufacturing a bipolar transistor by forming emitter regions of PNP and NPN transistors with diffusion of impurity from the polycrystalline silicon film into the substrate, the B-doped polycrystalline silicon film is deposited on the inter... | 03/05/1996 |
| 5494852 | High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then rampe... | 02/27/1996 |
| 5476799 | Process for preparing semiconductor device using a tunnel oxidized layer A process for preparing a semiconductor device forms an insulating thin film capable of tunnelling phenomenon of carriers on a semiconductor substrate and forms a polycrystalline semiconductor layer on the thin film. An impurity is injected to the surface... | 12/19/1995 |
| 5472909 | Method for the preparation of discrete substrate plates of semiconductor silicon wafer An efficient method is proposed for the preparation of a silicon single crystal wafer for discrete semiconductor devices, such as transistors, deeply doped with a dopant on one surface, the other surface being mirror-polished. Different from the conventio... | 12/05/1995 |
| 5418184 | Method of manufacturing a semiconductor device in which dopant atoms are provided in a semiconductor body A method of manufacturing a semiconductor device includes the step of providing a dopant (4) near a surface (2) of a semiconductor body (1) in a deposition step, after which in a diffusion step the dopant (4) is diffused into the semiconductor body (1) by... | 05/23/1995 |
| 5316977 | Method of manufacturing a semiconductor device comprising metal silicide According to this invention, a method of manufacturing a semiconductor device includes the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a transitition layer c... | 05/31/1994 |
| 5278097 | Method of making doped silicon spheres Solar cells are formed of semi-conductor spheres of P-type interior having an N-type skin are pressed between a pair of aluminum foil members forming the electrical contacts to the P-type and N-type regions. The aluminum foils, which comprise 1.0% silicon... | 01/11/1994 |
| 5244831 | Method of doping a polysilicon layer on a semiconductor wafer The present invention concerns a method for doping a polysilicon layer with phosphorous in which phosphorous oxychloride is supplied to the silicon wafer near the beginning of the oven temperature ramping of the silicon wafer. By introducing the phosphoro... | 09/14/1993 |
| 5217539 | III-V solar cells and doping processes Zinc diffusion procedures applicable for large scale manufacture of GaAs and GaSb cells used in tandem solar cells having a high energy conversion efficiency. The zinc doping and carrier concentration are restricted to be less than about 1019 /... | 06/08/1993 |
| 5173440 | Method of fabricating a semiconductor device by reducing the impurities In fabricating a semiconductor device, when impurities are diffused from a silicon oxide layer containing the impurities to a semiconductor layer, a diffusion atmosphere is controlled so as to oxidize or reduce a specified impurity to thereby control the ... | 12/22/1992 |
| 5171708 | Method of boron diffusion into semiconductor wafers having reduced stacking faults A method of diffusing boron into semiconductor wafers is disclosed which essentially includes boron deposition and boron diffusion. The deposition is performed from 900° to 1,000° C. and the diffusion at a temperature of 890° to 1000° C. Oxidation ind... | 12/15/1992 |
| 4963509 | Gold diffusion method for semiconductor devices of high switching speed Gold is diffused into a silicon substrate by first depositing an ultrathin layer of gold on one of the main faces of the substrate and then by heating the substrate to a temperature range of about 300°-850° C., instead of to about 1000° according to ... | 10/16/1990 |
| 4925812 | Platinum diffusion process Platinum atoms are uniformly dispersed throughout a silicon wafer containing preformed junctions by depositing a layer of platinum on a clean silicon surface and thereafter immediately heating the wafer to about 500° C. to form platinum silicide. Alterna... | 05/15/1990 |
| 4843033 | Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source A method of diffusion of dopants (e.g. zinc) into III-V substrates (e.g. GaAs) using metal silicide and dopants (e.g. Wx Siy :Zn) is disclosed. A cap layer (e.g. SiO2 or Si3 N4) is also used. The zinc... | 06/27/1989 |
