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Class 438/56 - Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a device or circuit responsive to atomic
No. of patents: 55
Last issue date: 04/17/2012


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NumberTitleIssue Date
8158449Particle emission analysis for semiconductor fabrication steps
A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabricat...
04/17/2012
7989250Membrane grating for beam steering device and method of fabricating same
A method of fabricating a membrane structure for a diffractive phased array assembly is provided. The method includes the steps of providing a wafer having a body and at least a membrane layer and a backside layer disposed on opposite faces of the body, forming a gr...
08/02/2011
7858425Monolithic nuclear event detector and method of manufacture
A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silic...
12/28/2010
7838324Neutron detection structure and method of fabricating
A method of fabricating a neutron detection structure includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer where at least a portion of the first substrate was removed, permanently bonding a ...
11/23/2010
7629196Method for manufacturing an integrated circuit having increased radiation hardness and reliability
A method is disclosed for manufacturing an integrated circuit that has increased radiation hardness and reliability. A device active area of an integrated circuit is provided and a layer of radiation resistant material is applied to the device active area of the int...
12/08/2009
7402736Method of fabricating a probe having a field effect transistor channel structure
A probe of a scanning probe microscope having a sharp tip and an increased electric characteristic by fabricating a planar type of field effect transistor and manufacturing a conductive carbon nanotube on the planar type field effect transistor. To achieve this, the...
07/22/2008
7368794Boron carbide particle detectors
Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha particles, neutrons, or photons. ...
05/06/2008
7364942Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor
This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor depositio...
04/29/2008
7338829Semiconductor structures having through-holes sealed with feed through metalization
The invention relates to a method for producing a detector for determining the energy of photons and charged particles; to be precise, a so-called ΔE detector or transmission detector. The invention also relates to a detector that can be produced by using said meth...
03/04/2008
7335890Method and apparatus for detecting atomic particles
An atomic particle detection assembly includes at least one atomic particle detector positioned within a first chamber having a first operating pressure. The assembly also includes at least one junction apparatus coupled to the at least one atomic particle detector....
02/26/2008
7311942Method for binding halide-based contaminants during formation of a titanium-based film
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition pr...
12/25/2007
7262400Image sensor device having an active layer overlying a substrate and an isolating region in the active layer
An image sensing device. An active layer is disposed overlying a substrate, wherein the active layer has different conductivity with the substrate. A plurality of photodiodes is disposed in the active layer. An isolating region is interposed between two adjacent pho...
08/28/2007
7259381Methodology for determining electron beam penetration depth
The Grunn equation: Depth = 0.046 ⁢ ⁢ ( ...
08/21/2007
7250323Methods of making energy conversion devices with a substantially contiguous depletion regions
A method of making an energy conversion device includes forming a plurality of pores within a substrate and forming a junction region within each of the plurality of pores. Each of the junction regions has a depletion region and each of the plurality of pores define...
07/31/2007
7220614Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor
This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor depositio...
05/22/2007
7186611High-density germanium-on-insulator photodiode array
A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a firs...
03/06/2007
7172910Web fabrication of devices
Apparatuses and methods for forming displays are claimed. One embodiment of the invention relates to forming an assembly using different sized blocks in either a flexible or rigid substrate. ...
02/06/2007
7151006Process to reduce the dark current in semiconducting films
A method of coating the joined crystals within a semiconductor conversion layer to reduce the dark current without compromising the sensitivity of the conversion layer is presented. A semiconductor conversion layer comprising a plurality of joined crystals and perme...
12/19/2006
7148078Integrated circuit package provided with cooperatively arranged illumination and sensing capabilities
An integrated circuit package includes an angled one-piece substrate having a light source fixed to one area and a sensor die fixed to a second area, such that the light source is directed to illuminate the field of view of the sensor die when a surface of interest ...
12/12/2006
7145104Silicon layer for uniformizing temperature during photo-annealing
An apparatus and method for uniformizing the temperature distribution across a semiconductor wafer during radiation annealing of process regions formed in the wafer is disclosed. The method includes forming a silicon layer atop the upper surface of the wafer and irr...
12/05/2006
7129556Method for fabricating array substrate for X-ray detector
An array substrate for use in an X-ray sensing device is fabricated using an etching stopper that enables good control of the etching process and that prevents over-etch of drain electrodes and second capacitor electrodes while forming contact holes and a cutting fu...
10/31/2006
7122396Semiconductor acceleration sensor and process for manufacturing the same
The present invention provides a semiconductor acceleration sensor wherein a semiconductor element is prevented from being damaged even when at least part of a weight is disposed in an internal space of a semiconductor sensor element and the mass of a weight is acco...
10/17/2006
7109087Absorber layer for DSA processing
A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, ...
09/19/2006
7008813Epitaxial growth of germanium photodetector for CMOS imagers
A method of fabricating a germanium photodetector includes preparing a silicon wafer as a silicon substrate; depositing a layer of silicon nitride on the silicon substrate; patterning and etching the silicon nitride layer; depositing a first germanium layer on the s...
03/07/2006
7001849Surface treatment and protection method for cadmium zinc telluride crystals
A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclose...
02/21/2006
6984540Surface acoustic wave device and method for producing the same
A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer and a second interdigital transducer formed on the substrate so that the first and second interdigital transducers are opposed to each other. The substrate includes a ...
01/10/2006
6952026Position sensitive photo detector
A radiation detector is of the type, which by use of electric signals, which indicates the position of an irradiated point on a detector surface of the detector. The detector includes a semiconductor wafer having at least two barrier layers, which are arranged in su...
10/04/2005
6933585Color image sensor on transparent substrate and method for making same
The invention concerns a color image sensor that can be used to make a miniature camera, and a corresponding method for making this sensor. The image sensor comprises a transparent substrate (40) on the upper part of which are superimposed, successivel...
08/23/2005
6911711Micro-power source
A micro-power generator, comprises an electrically insulating substrate; a semiconductor layer affixed to the substrate; electrodes affixed to the semiconductor layer for collecting electrical charges emitted by a radioisotope source; a radio-isotope source interpos...
06/28/2005
6861281Group III nitride compound semiconductor light-emitting device and method for producing the same
A reflective layer 10 is formed on a back surface 11b of a sapphire substrate 11. The reflective layer 10 includes an extension portion 10a which extends so as to cover almost all the sidewalls 21a of a ...
03/01/2005
6734516Monolithic lead-salt infrared radiation detectors and methods of formation
A hybridized Lead-Salt infrared radiation detector includes a focal plane having a substrate and a sensitized, delineated Lead-Salt layer upon the substrate, the delineations forming a plurality of sections in a two-dimensional array. The detector also includes elec...
05/11/2004
6696362Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of ti...
02/24/2004
6645787Gamma ray detector
A method for improving CdZnTe-based gamma-ray detectors is presented. A CdZnTe detector/crystal is exposed to acoustic waves. After exposure to acoustic waves, the CdZnTe gamma-detector gains higher resistivity and exhibits better spectral resolution and ...
11/11/2003
6607935Method for fabricating array substrate for X-ray detector
An array substrate for use in an X-ray sensing device is fabricated using an etching stopper that enables good control of the etching process and that prevents over-etch of drain electrodes and second capacitor electrodes while forming contact holes and a...
08/19/2003
6515218Photovoltaic element, process for the production thereof, method for removing a cover portion of a covered wire, and method for joining a covered wire and a conductor
A photovoltaic element having a wire disposed on a surface of the photovoltaic element for outputting a power generated by the photovoltaic element, and an electrode electrically joined with the wire while forming a joining portion, wherein the joining po...
02/04/2003
6495390Thermally induced reflectivity switch for laser thermal processing
A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a...
12/17/2002
6465857Semiconductor particle detector and a method for its manufacture
A chip of semiconductor material includes a first layer with a first type of conductivity having a surface on the first major surface of the chip, a second layer with the first type of conductivity having a surface on the second major surface of the chip,...
10/15/2002
6379986Method of forming tunnel oxide film for superconducting X-ray sensor element
To produce a high quality tunnel oxidation film on a bulk superconductor surface. A tunnel oxidation film is formed by anodizing a bulk aluminum material and then a tunnel oxidation film is formed by irradiating oxygen ions....
04/30/2002
6348356Method and apparatus for determining the robustness of memory cells to alpha-particle/cosmic ray induced soft errors
Method for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes. In one embodiment, the method includes the steps of estimating energies of the alpha-particle and/or cosmic ray strikes; computing a nu...
02/19/2002
6329668Quantum dots for optoelecronic devices
Aluminum Free InGaAs/InGaP quantum dot photoconductive detectors are grown on GaAs substrates by LP-MOCVD....
12/11/2001
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