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| Number | Title | Issue Date |
| 8183137 | Use of dopants to provide low defect gate full silicidation The disclosure provides a semiconductor device and method of manufacture therefore. The method for manufacturing the semiconductor device, in one embodiment, includes forming a layer of gate electrode material over a layer of gate dielectric material, wherein the la... | 05/22/2012 |
| 8163638 | Back side contact solar cell structures and fabrication processes In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant... | 04/24/2012 |
| 8138072 | Semiconductor structures and methods of manufacture Semiconductor structures and methods of manufacture semiconductors are provided which relate to transistors. The method of forming a transistor includes thermally annealing a selectively patterned dopant material formed on a high-k dielectric material to form a high... | 03/20/2012 |
| 8058159 | Method of making low work function component A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predeter... | 11/15/2011 |
| 7994032 | Method of making deep junction for electrical crosstalk reduction of an image sensor The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of senso... | 08/09/2011 |
| 7807556 | Method for doping impurities A method for doping impurities into a device layer includes providing a carbonized dopant layer including one or more dopant impurities over a device layer and heat treating the carbonized dopant layer to thermally diffuse the dopant impurities into the device layer... | 10/05/2010 |
| 7625812 | Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the ... | 12/01/2009 |
| 7611977 | Process of phosphorus diffusion for manufacturing solar cell This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950° C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride ... | 11/03/2009 |
| 7507648 | Methods of fabricating crystalline silicon film and thin film transistors A method by which solid phase crystallization (SPC) thermal budget for crystallizing an undoped (or a lightly doped) amorphous Si (a-Si) is significantly reduced. First, a composite layer structure consisting of an undoped (or a lightly doped) a-Si layer and a heavi... | 03/24/2009 |
| 7439165 | Method of fabricating tensile strained layers and compressive strain layers for a CMOS device A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation structures as well as application of high temperature oxidation and ac... | 10/21/2008 |
| 7435668 | Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impuri... | 10/14/2008 |
| 7364995 | Method of forming reduced short channel field effect transistor A method for manufacturing a semiconductor device capable of reducing a short channel effect, whereby the semiconductor device includes a pair of impurity regions for a source and a drain formed on a semiconductor substrate, a gate having a gate electrode used to co... | 04/29/2008 |
| 7326631 | Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another Consistent with an example embodiment, a method of manufacturing a semiconductor device comprises MOS transistors having gate electrodes formed in a number of metal layers deposited upon one another. Active silicon regions having a layer of a gate dielectric and fie... | 02/05/2008 |
| RE39988 | Deposition of dopant impurities and pulsed energy drive-in A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure ... | 01/01/2008 |
| 7303967 | Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an... | 12/04/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7247548 | Doping method and semiconductor device using the same The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is condu... | 07/24/2007 |
| 7235468 | FinFET device with reduced DIBL FinFET devices formed with a Silicon On Insulator (SOI) technology with reduced Drain Induced Barrier Lowering (DIBL) characteristics and methods for producing the same. The methods involve dopant implants into the insulator layer, thereby creating borophosphosilica... | 06/26/2007 |
| 7226803 | Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concent... | 06/05/2007 |
| 7211501 | Method and apparatus for laser annealing Numerous embodiments of a method and apparatus for laser annealing are disclosed. In one embodiment, a method of laser annealing includes performing one or more annealing processes on one or more portions of a semiconductor device, where one or more annealing proces... | 05/01/2007 |
| 7183158 | Method of fabricating a non-volatile memory A method of fabricating a nonvolatile memory is provided. The method includes forming a bottom dielectric layer, a charge trapping layer, a top dielectric layer and a conductive layer on the substrate sequentially. Portions of conductive layer, top dielectric layer,... | 02/27/2007 |
| 7157374 | Method for removing a cap from the gate of an embedded silicon germanium semiconductor device A method of removing the cap from a gate of an embedded SiGe semiconductor device includes the formation of the embedded SiGe semiconductor device with the cap consisting of a cap material on top of the gate, first sidewall spacers on side surfaces of the gate, and ... | 01/02/2007 |
| 7154129 | Semiconductor arrangement with a p-n transition and method for the production of a semiconductor arrangement A semiconductor system (200), particularly a diode, having a p-n junction is proposed, that is formed as a chip having an edge area, which includes a first layer (2) of a first conductivity type and a second layer (1, 3) of a second conductivity... | 12/26/2006 |
| 7144751 | Back-contact solar cells and methods for fabrication Methods for fabrication of emitter wrap through (EWT) back-contact solar cells and cells made by such methods. Certain methods provide for higher concentration of dopant in conductive vias compared to the average dopant concentration on front or rear surfaces, and p... | 12/05/2006 |
| 7144765 | Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs substrate 310, AlGaAs buffer layer 322, a channel l... | 12/05/2006 |
| 7118976 | Methods of manufacturing MOSFETs in semiconductor devices Methods of fabricating MOSFETs in semiconductor/r devices are disclosed. One example method may include forming an isolation layer on a semiconductor substrate and forming a capping layer thereon, forming an epitaxial active region which is not covered with the isol... | 10/10/2006 |
| 7118997 | Implantation of gate regions in semiconductor device fabrication A method for implanting gate regions essentially without implanting regions of the semiconductor layer where source/drain regions will be later formed. The method includes the steps of (a) providing (i) a semiconductor layer, (ii) a gate dielectric layer on the semi... | 10/10/2006 |
| 7119389 | Dynamic random access memory cells having laterally offset storage nodes DRAM cells include a common drain region in an integrated circuit substrate and first and second source regions in the integrated circuit substrate, a respective one of which is laterally offset from the common drain region along respective first and second opposite... | 10/10/2006 |
| 7109100 | Semiconductor device and method for manufacturing semiconductor device To provide a semiconductor device able to be made uniform in diffusion depth of the impurity in a diffusion layer by a single diffusion and to give the desired threshold voltage and improved in yield and a method of producing the same. The device has a channel layer... | 09/19/2006 |
| 7045417 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device, which comprises forming a first semiconductor film on a surface of a semiconductor substrate, adsorbing a first impurity on a surface of the first semiconductor film, adsorbing a second impurity on the surface of the... | 05/16/2006 |
| 7033873 | Methods of controlling gate electrode doping, and systems for accomplishing same The present invention is generally directed to various methods of controlling gate electrode doping, and various systems for accomplishing same. In one illustrative embodiment, the method disclosed herein comprises performing at least one process operation to form a... | 04/25/2006 |
| 7033916 | Shallow junction semiconductor and method for the fabrication thereof A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A super-saturated doped source silicide metallic layer is formed on the sem... | 04/25/2006 |
| 7022576 | Method of manufacturing a semiconductor device The present invention relates to a method of manufacturing a semiconductor device. According to the present invention, a sidewall layer containing impurities is formed on a part of gate electrode, thereby forming a low concentration source/drain electrode for a ligh... | 04/04/2006 |
| 7022577 | Method of forming ultra shallow junctions The present invention relates to a method of fabricating a semiconductor device. In specific embodiments, the method comprises providing a semiconductor substrate, and ion implanting dopant impurities over a time period into the semiconductor device by varying an io... | 04/04/2006 |
| 7011734 | Method of manufacturing semiconductor device having silicide layer A method of manufacturing a semiconductor device has the steps of: (a) evacuating a sputtering chamber to a pressure of 1.5×10−8 torr to 9×10−8 torr and heating a silicon substrate to a temperature of 330° C. to 395° C.; (b) sputtering ... | 03/14/2006 |
| 6972222 | Temporary self-aligned stop layer is applied on silicon sidewall A method is provided for forming NMOS and PMOS transistors with ultra shallow source/drain regions having high dopant concentrations. First sidewall spacers and nitride spacers are sequentially formed on the sides of a gate electrode followed by forming a self-align... | 12/06/2005 |
| 6969621 | Contamination distribution apparatus and method Embodiments of the invention include an apparatus for uniformly contaminating samples. The apparatus includes a housing that contains a rotatable carousel for the holding samples. A drive element is used for rotating the carousel. The apparatus includes a contaminan... | 11/29/2005 |
| 6967379 | Semiconductor device including metal insulator semiconductor field effect transistor A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate... | 11/22/2005 |
| 6960486 | Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser... | 11/01/2005 |
| 6936108 | Heat treatment device A film-forming unit of the invention includes: a processing furnace, gas-supplying means that supplies a process gas into the processing furnace, heating means that heats an inside of the processing furnace to a predetermined process-temperature, and a normal-pressu... | 08/30/2005 |
