Class 438/557 - From melt

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the source of the electrically active
No. of patents: 33
Last issue date: 03/29/2011

Number	Title	Issue Date
7915154	Laser diffusion fabrication of solar cells A method of semiconductor junction formation in Laser diffusion process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being diffused form a dopant source into the surface of the wafer irr...	03/29/2011
RE39988	Deposition of dopant impurities and pulsed energy drive-in A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure ...	01/01/2008
7288423	In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first l...	10/30/2007
7186068	Fixing element The invention relates to a fixing element for fixing a component to a support part. The element comprises a retaining part (1) for the component to be fixed and a hollow anchor foot (2), which is used to anchor the fixing element in a continuous bore o...	03/06/2007
7176115	Method of manufacturing Group III nitride substrate and semiconductor device The present invention provides a manufacturing method that allows a Group III nitride substrate with a low dislocation density to be manufactured, and a semiconductor device that is manufactured using the manufacturing method. The manufacturing method includes, in a...	02/13/2007
7125453	High temperature high pressure capsule for processing materials in supercritical fluids A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending ...	10/24/2006
6872643	Implant damage removal by laser thermal annealing A method of manufacturing a semiconductor device includes forming a layer over a substrate, and doping the layer with a dopant, after which the layer is laser thermal annealed. The layer can be a nitride, an oxide, or a polysilicon layer. The dopants can be arsenic,...	03/29/2005
6737340	Method and apparatus for self-doping contacts to a semiconductor The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously dop...	05/18/2004
6632730	Method for self-doping contacts to a semiconductor The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simulta...	10/14/2003
6521501	Method of forming a CMOS transistor having ultra shallow source and drain regions A method of forming a CMOS structure, the method including the acts of: forming a gate structure over a substrate layer; forming a silicide layer over the substrate layer; forming shallow source/drain areas in the substrate layer; forming an oxide diffusi...	02/18/2003
6355544	Selective high concentration doping of semiconductor material utilizing laser annealing Extremely high dopant concentrations are uniformly introduced into a semiconductor material by laser annealing aided by an anti-reflective coating (ARC). A spin-on-glass (SOG) film containing dopant is formed on top of the semiconductor material. An ARC i...	03/12/2002
6329272	Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent re...	12/11/2001
6313398	Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same There are disclosed multi-crystalline silicon which is added with Ga (gallium) as a dopant and a method for producing Ga-doped multi-crystalline silicon, which comprises adding Ga to silicon melt in a crucible, which is melted by heating, and cooling the ...	11/06/2001
6194309	Method for forming contact A method for forming a contact of a semiconductor device is described, in which a conductive layer pattern is electrically connected to a semiconductor substrate and an interlayer insulating film is formed on the semiconductor substrate including the cond...	02/27/2001
6143633	In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon A dendritic web formation process and apparatus for diffusing dopant impurities into a growing dendritic crystal web to produce photovoltaic cells. A solid dopant diffusion source is arranged in a holder mounted in a vertical thermal element either within...	11/07/2000
6086726	Method of modifying a surface The present invention provides a surface modification method that provides beneficial changes in surface properties, can modify a surface to a greater depth than previous methods, and that is suitable for industrial application. The present method compris...	07/11/2000
5918140	Deposition of dopant impurities and pulsed energy drive-in A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed b...	06/29/1999
5908307	Fabrication method for reduced-dimension FET devices Pre-amorphization of a surface layer of crystalline silicon to an ultra-shallow (e.g., less than 100 nm) depth provides a solution to fabrication problems including (1) high thermal conduction in crystalline silicon and (2) shadowing and diffraction-inter...	06/01/1999
5888843	Method for making light-emitting diode having improved moisture resistance characteristics A light-emitting diode having improved moisture resistance characteristics comprises a p-type gallium arsenide substrate and four epitaxial layers of Alx Ga1-x As (22, 23, 24 and 25). These epitaxial layers comprises an intervening l...	03/30/1999
5851850	Method for fabricating a gap type semiconductor substrate of red light emitting devices A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP sing...	12/22/1998
5561079	Stalagraphy A method of lithography is disclosed for making very small structures (10-6 m and smaller) on a surface such as in the manufacture of semiconductor devices. Many micron-sized or smaller droplets of a suitable material are formed on the surface,...	10/01/1996
5399524	Method of providing an ohmic type contact on p-type Zn(S)Se A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200° C. for more than two hours....	03/21/1995
5229321	Method of diffusing mercury into a crystalline semiconductor material including mercury A method of diffusing mercury into a crystalline compound semiconductor film including mercury includes forming an amalgam on a region of the semiconductor film into which mercury is to be diffused, forminq a protective film on the amalgam, and annealing,...	07/20/1993
4746398	Gallium arsenide planar tunnel diode method A gallium arsenide tunnel diode is fabricated using planar techniques from a wafer of gallium arsenide that has been heavily doped to form a P region. Tin is plated onto an exposed section of a surface of the wafer and then melted to cause individual tin ...	05/24/1988
4684415	Core annihilation method of Hg_1-x Cd_x Te Methods of doping Hg1-x Cdx Te (50) with fast diffusing dopants by immersion in a mercury reservoir (32) doped with the desired dopants are disclosed. Also, methods of core annihilation of Hg1-x Cdx Te slices or...	08/04/1987
4244753	Method for purification of II-VI crystals A method for purification of Group II-VI crystals by contacting with a zinc melt....	01/13/1981
4184897	Droplet migration doping using carrier droplets Carrier droplets are employed in moving melts of metal-rich semiconductor material through a solid body of semiconductor material by thermal gradient zone melting. One element of the droplet is selected for its ability to penetrate and migrate through the...	01/22/1980
4089713	Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy A method of adjusting donor concentration in a body of mercury cadmium telluride comprising the steps of contacting the mercury cadmium telluride with a quantity of donor material selected from the group consisting of gallium and gallium alloys containing...	05/16/1978
4081824	Ohmic contact to aluminum-containing compound semiconductors A consistently low resistance ohmic contact is made to an aluminum-containing compound semiconductor by a multilayer deposition and heat treatment process. The process includes the deposition of a transition layer on the semiconductor surface to be contac...	03/28/1978
4060432	Method for manufacturing nuclear radiation detector with deep diffused junction Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430° C. and is monitored by a quartz half cell containing...	11/29/1977
4050966	Method for the preparation of diffused silicon semiconductor components A method for preparing semiconductor components from silicon as the base material. The components have at least two zones, produced by diffusion, with different conduction type. The diffusion of the individual zones takes place from dopant containing nick...	09/27/1977
3948693	Process for the production of yellow glowing gallium phosphide diodes Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide, elemental tellurium, oxygen and nitrogen are injected into th...	04/06/1976

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Class 438/557 - From melt