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Class 438/553 - Using metal mask


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes involving use of a mask made from metal to retard
No. of patents: 15
Last issue date: 07/26/2011


NumberTitleIssue Date
7985667Method for patterning semiconductor device having magnetic tunneling junction structure
A method for patterning a semiconductor device includes forming a lower electrode conductive layer over a substrate, forming a stack structure including a lower electrode conductive layer, a first ferromagnetic layer, an insulation layer and a second ferromagnetic l...
07/26/2011
7442625Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device
An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a ...
10/28/2008
7303949High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown ...
12/04/2007
7176114Method of depositing patterned films of materials using a positive imaging process
The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developin...
02/13/2007
6955726Mask and mask frame assembly for evaporation
A mask frame assembly includes a frame having an opening and a mask having at least two unit mask elements. Both ends of each unit mask element are fixed to the frame in a state of tension. The unit mask elements include a unit masking pattern, and overlap each othe...
10/18/2005
6780781Method for manufacturing an electronic device
A method for manufacturing an electronic device is provided. In one example of the method, the method prevents deformation of a resist mask caused by the irradiation of exposure light. The resist mask has a resist as an opaque element, and can afford mask patterns u...
08/24/2004
6703307Method of implantation after copper seed deposition
A method of fabricating an integrated circuit can include forming a barrier layer along lateral side walls and a bottom of a via aperture, forming a seed layer proximate and conformal to the barrier layer, and forming an implanted layer proximate and conf...
03/09/2004
6670251Method of fabricating semiconductor device
An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region (3), and one implantation of a dopant ion that does not influence a position...
12/30/2003
6444542Integrated circuit and method
A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch....
09/03/2002
6124167Method for forming an etch mask during the manufacture of a semiconductor device
A method used during the formation of a semiconductor device comprises the steps of forming a polycrystalline silicon layer over a semiconductor substrate assembly and forming a silicon nitride layer over the polycrystalline silicon layer. A silicon dioxi...
09/26/2000
6100172Method for forming a horizontal surface spacer and devices formed thereby
The present invention provides a method for forming self-aligned spacers on the horizontal surfaces while removing spacer material from the vertical surfaces. The preferred method uses a resist that can be made insoluble to developer by the use of an impl...
08/08/2000
6005260Non-linear switching element of an electro-optical display device with metallic protective layer
For contacting a non-linear switching element (10), for example for use in a display device (1), a metallic layer (14) is provided on a layer of non-linear resistive material by means of a low-energetic deposition technique. This layer may function as a c...
12/21/1999
5070029Semiconductor process using selective deposition
A process for fabricating semiconductor devices is disclosed which utilizes a selective deposition process to reduce the total number of process steps and especially the total number of photolithography steps required. In accordance with one embodiment of...
12/03/1991
4002513Bucket-brigade delay line having reduced parasitic capacitances and method for making the same
An MOS bucket brigade delay line having reduced parasitic capacitances and method for making the same, include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality ...
01/11/1977
3998675Method of doping a semiconductor body
A method of doping a semiconductor body comprises applying to a surface of the semiconductor body a layer through which the doping material can diffuse and provide the layer with a reducing agent to reduce the doping material to its elemental form at area...
12/21/1976
 
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