Class 438/550 - Nonuniform heating

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes including the nonuniform application of thermal
No. of patents: 22
Last issue date: 05/08/2012

Number	Title	Issue Date
8173528	Gallium-doped monocrystalline silicon solar cell and manufacture method for the same A manufacture method for a gallium-doped monocrystalline silicon solar cell is provided. The method includes classifying the sheets of gallium-doped monocrystalline silicon according to resistivity; texturing and washing the sheets of gallium-doped monocrystalline s...	05/08/2012
7622374	Method of fabricating an integrated circuit Methods of fabricating an integrated circuit, in particular a dynamic random access memory are described. After forming memory cells on a semiconductor substrate a mirror layer is provided, said mirror layer covering the memory cells. Then logic devices are formed a...	11/24/2009
7354842	Methods of forming conductive materials The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to rele...	04/08/2008
7176112	Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed ...	02/13/2007
7041582	Method of manufacturing semiconductor device The present invention relates to a method of manufacturing a semiconductor device. A barrier metal layer for blocking a metal material from being diffused into an insulating film is formed by means of an ALD method. At this time, the barrier metal layer is formed to...	05/09/2006
7022578	Heterojunction bipolar transistor using reverse emitter window A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, an intrinsic base region of a compound semiconductive material over the collector region, an extrinsic base region, an emitt...	04/04/2006
7001832	Method for limiting slip lines in a semiconductor substrate A method for limiting slip lines in a semiconductor substrate including a support layer and a useful semiconductor layer that is transferred to the support layer. The method includes precipitating at least a portion of interstitial oxygen in the support layer by a s...	02/21/2006
6551903	Melt through contact formation method A thin film photovoltaic devices is described, having a glass substrate 11 over which is formed a thin film silicon device having an n++ layer 12, a p layer 13 and a dielectric layer 14 (typically silicon oxide or silicon nitride). To create a ...	04/22/2003
6544811	Micromachined device having electrically isolated components and a method for making the same A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such ...	04/08/2003
6475888	Method for forming ultra-shallow junctions using laser annealing A method for forming an ultra-shallow junction using laser annealing wherein an amorphous carbon layer is used as an energy absorber layer comprises the steps of preparing a silicon substrate having isolation layers; forming a gate having a stacked struct...	11/05/2002
6413888	Method and apparatus for preventing rapid temperature variation of wafers during processing In a method for fabricating a semiconductor device, a semiconductor wafer is thermally treated with a wafer treatment device, such as in a diffustion process. The semiconductor wafer is deliverd to the treatment device using a conveyor system. The conveyo...	07/02/2002
6329272	Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent re...	12/11/2001
6083833	Method for forming conductive film for semiconductor device A method for forming a conductive film for a semiconductor device wherein a conductive film is formed on each wafer loaded in a boat of a vertical furnace of a low pressure chemical vapor deposition apparatus provided with a chamber, a reaction tube in a ...	07/04/2000
5773337	Method for forming ultra-shallow junction of semiconductor device There is disclosed a method for forming an ultra-shallow junction of a semiconductor device, comprising a four-stage RTA process following the ion implantation of dopants for source/drain junction, the RTA process being carried out with high temperature-e...	06/30/1998
5723356	Fabrication method for semiconductor device A first Poly-Si film and an a-Si film are formed on a semiconductor base body at a first step, and phosphorus ions (N-type impurity) are implanted in the a-Si film at an NMOS forming region and boron ions (P-type impurity) are implanted in the a-Si film a...	03/03/1998
5541138	Laser processing method, and method for forming insulated gate semiconductor device A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type op...	07/30/1996
5401686	Method of uniformly diffusing impurities into semiconductor wafers The temperature of the front heater is set to a higher value than the set temperature of the center heater and the temperature of the rear heater is set to a lower value than the set temperature of the center heater to thereby provide such a temperature g...	03/28/1995
4835113	Fabrication of dielectrically isolated devices with buried conductive layers In dielectrically isolated devices a buried conducting layer adjacent to the dielectric layer is produced by a drift effect. In particular, if arsenic antimony and/or phosphorus is present in the silicon dioxide layer, it is caused to drift from this laye...	05/30/1989
4774195	Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of activated hydrogen The invention relates to a process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies, with fission products which are to be withdrawn during the process being fo...	09/27/1988
4737470	Method of making three dimensional structures of active and passive semiconductor components The disclosure relates to a three dimensional semiconductor structure formed in a semiconductor substrate wherein electrical components, both active and passive, are formed on the substrate surface as well as in grooves formed in the substrate at an angle...	04/12/1988
4619036	Self-aligned low-temperature emitter drive-in After the extrinsic base region of a bipolar transistor has been formed, and the emitter contact has been patterned and cut, the emitter dopant is deposited or spun on, and the emitter dopant is then driven in using a short pulse of radiant energy. The ne...	10/28/1986

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Class 438/550 - Nonuniform heating