Class 438/542 - Diffusing a dopant

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for permeating an electrically active impurity
No. of patents: 205
Last issue date: 05/15/2012

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Number	Title	Issue Date
8178431	Process for producing a PN homojunction in a nanostructure The invention relates to a process for producing a p-n junction in a nanostructure, in which the nanostructure has one or more nanoconstituents made of a semiconductor material with a single type of doping having one conductivity type, characterized in that it inclu...	05/15/2012
8076227	Electroactive polymers for lithography Systems and methods for lithography include actuating an electroactive polymer member to position mask and/or substrate. ...	12/13/2011
8053343	Method for forming selective emitter of solar cell and diffusion apparatus for forming the same A method for forming a selective emitter of a solar cell and a diffusion apparatus for forming the same are provided. The method includes texturing a surface of a silicon substrate by etching the silicon substrate, coating an impurity solution on the surface of the ...	11/08/2011
8034700	Method of fabricating a diode A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from t...	10/11/2011
7989328	Resistive memory array using P-I-N diode select device and methods of fabrication thereof An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devic...	08/02/2011
7919403	Method of manufacturing silicon carbide semiconductor device A method of manufacturing a silicon carbide semiconductor device is provided that includes a step of forming in a surface of a silicon carbide wafer of first conductivity type a first region of second conductivity type having a predetermined space thereinside by ion...	04/05/2011
7846823	Masking paste, method of manufacturing same, and method of manufacturing solar cell using masking paste A masking paste used as a mask for controlling diffusion when diffusing a p-type dopant and an n-type dopant into a semiconductor substrate and forming a high-concentration p-doped region and a high concentration n-doped region is provided that contains at least a s...	12/07/2010
7772100	Method of manufacturing a semiconductor device having a buried doped region A method of providing a region of doped semiconductor (40) which is buried below the surface of a semiconductor substrate (10) without the requirement of epitaxially deposited layers is provided. The method includes the steps of forming first and secon...	08/10/2010
7737014	Reduction of boron diffusivity in pFETs A stressed film applied across a boundary defined by a structure or a body (e.g. substrate or layer) of semiconductor material provides a change from tensile to compressive stress in the semiconductor material proximate to the boundary and is used to modify boron di...	06/15/2010
7727868	Apparatus and method for controlling diffusion A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of dopant elements. Selection of a plurality of dopant elements includes selecting a first dopant element with...	06/01/2010
7629240	Controlling dopant diffusion in a semiconductor region Dopant diffusion into semiconductor material is controlled during fabrication of a semiconductor structure by depositing a nucleation layer over a first layer of the semiconductor structure and depositing a device layer containing the dopant over the nucleation laye...	12/08/2009
7605064	Selective laser annealing of semiconductor material A method of manufacture for semiconductor electronic products and a circuit structure. A semiconductor material has a surface region and dopant is provided to a portion of the surface region. The portion of the surface region provided with the dopant is irradiated w...	10/20/2009
7524745	Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure Method and device for doping or diffusion, or oxidation of silicon wafers (4), the wafers being introduced into the chamber (2) of an oven (1) wherein is introduced at least a gas for performing the doping or diffusion or oxidation process. The ...	04/28/2009
7514345	Electroactive polymers for lithography Systems and methods for lithography include actuating an electroactive polymer member to position mask and/or substrate. ...	04/07/2009
7485555	Methods for forming a P-type polysilicon layer in a semiconductor device A P-type polysilicon layer having a stable and desired resistivity is formed by alternately depositing a plurality of silicon atom layers and a plurality of group IIIA element atom layers on a semiconductor substrate by atomic layer deposition, and thereafter formin...	02/03/2009
7439159	Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor devices A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the ...	10/21/2008
7435514	Active mask lithography An active mask emits a patterned energy flux in response to an energy input. ...	10/14/2008
7368356	Transistor with doped gate dielectric A transistor and method of manufacture thereof. A semiconductor workpiece is doped before depositing a gate dielectric material. Using a separate anneal process or during subsequent anneal processes used to manufacture the transistor, dopant species from the doped r...	05/06/2008
7338829	Semiconductor structures having through-holes sealed with feed through metalization The invention relates to a method for producing a detector for determining the energy of photons and charged particles; to be precise, a so-called ΔE detector or transmission detector. The invention also relates to a detector that can be produced by using said meth...	03/04/2008
7338876	Method for manufacturing a semiconductor device A method for forming a semiconductor memory device includes the steps of: implanting a dopant in a semiconductor substrate; heat treating the semiconductor substrate in an oxidizing ambient to diffuse the dopant for forming diffused regions in the semiconductor subs...	03/04/2008
7335575	Semiconductor constructions and semiconductor device fabrication methods A method of fabricating a semiconductor device includes etching a substrate to form a recess, the substrate being formed on a backside of a semiconductor wafer, forming pores in the substrate in an area of the recess, and forming in the recess a material having a th...	02/26/2008
7312160	Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential. ...	12/25/2007
7311999	Anode for a battery and a battery using an anode An anode and a battery using same as provided. The battery has a winding electrode body wherein a cathode and an anode are layered and wound with a separator and an electrolyte layer, which hold an electrolyte solution in a holding body therebetween. The anode has a...	12/25/2007
7285449	Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source /drain and semiconductor device manufactured by the method A gate electrode made of semiconductor is formed on the partial surface area of a semiconductor substrate. A mask member is formed on the surface of the semiconductor substrate in an area adjacent to the gate electrode. Impurities are implanted into the gate electro...	10/23/2007
7268065	Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se...	09/11/2007
7262463	Transistor including a deposited channel region having a doped portion A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge...	08/28/2007
7262111	Method for providing a deep connection to a substrate or buried layer in a semiconductor device A system and method is disclosed for providing a deep connection to a substrate or buried layer of a semiconductor device. Three shallow trenches are etched halfway through a layer of epitaxial silicon that is located on a substrate. A second doped layer is created ...	08/28/2007
7247548	Doping method and semiconductor device using the same The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is condu...	07/24/2007
7244970	Low capacitance two-terminal barrier controlled TVS diodes A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and...	07/17/2007
7235468	FinFET device with reduced DIBL FinFET devices formed with a Silicon On Insulator (SOI) technology with reduced Drain Induced Barrier Lowering (DIBL) characteristics and methods for producing the same. The methods involve dopant implants into the insulator layer, thereby creating borophosphosilica...	06/26/2007
7220674	Copper alloys for interconnections having improved electromigration characteristics and methods of making same Formation of copper alloy interconnect lines on integrated circuits includes introducing dopant elements into a copper layer. Copper alloy interconnect lines may be formed by providing a doping layer over a copper layer, driving dopant material into the copper layer...	05/22/2007
7217657	Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device A method is disclosed in which differing metal layers are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a...	05/15/2007
7202164	Method of forming ultra thin silicon oxynitride for gate dielectric applications A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon lay...	04/10/2007
7198447	Semiconductor device producing apparatus and producing method of semiconductor device A semiconductor device producing apparatus is disclosed. The apparatus includes a carrier-holding stage for placing a carrier; first, second and third stages each for holding first and second boats one at a time, each boat holding one or more substrates; a boat tran...	04/03/2007
7166232	Method for producing a solid body including a microstructure According to a method for producing a solid body (1) including a microstructure (2), the surface of a substrate (3) is provided with a masking layer (6) that is impermeable to a substance to be applied. The substance is then incorporated ...	01/23/2007
7148130	Semiconductor device and method of manufacturing the same A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between the source/drain regions, a gate electrode formed on the gate insula...	12/12/2006
7141511	Method and apparatus for fabricating a memory device with a dielectric etch stop layer The present technique relates to a method and apparatus to provide a dielectric etch stop layer that prevents shorts for a buried digit layer as an interconnect. In a memory device, such as DRAM or SRAM, various layers are deposited to form structures, such as PMOS ...	11/28/2006
7122454	Method for improving nitrogen profile in plasma nitrided gate dielectric layers A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or “annealed” in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system exper...	10/17/2006
7118997	Implantation of gate regions in semiconductor device fabrication A method for implanting gate regions essentially without implanting regions of the semiconductor layer where source/drain regions will be later formed. The method includes the steps of (a) providing (i) a semiconductor layer, (ii) a gate dielectric layer on the semi...	10/10/2006
7118998	Method of forming a conductive structure A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming a plurality of trenches between the first and second regions, implanting a dopant into the bott...	10/10/2006

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Class 438/542 - Diffusing a dopant