Class 438/541 - Including diffusion after fusing step

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes including a step of solid-state diffusion subsequent
No. of patents: 26
Last issue date: 04/15/2008

Number	Title	Issue Date
7358168	Ion implantation method for forming a shallow junction A shallow junction that previously would require the use of a low-energy ion implanter can be directly formed by high-energy or middle-energy ion implanters such that the manufacturer need not purchase a new low-energy ion implanter. In one embodiment, an ion-implan...	04/15/2008
7312151	System for ultraviolet atmospheric seed layer remediation The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor subs...	12/25/2007
7268065	Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se...	09/11/2007
7148130	Semiconductor device and method of manufacturing the same A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between the source/drain regions, a gate electrode formed on the gate insula...	12/12/2006
7082346	Semiconductor manufacturing apparatus and semiconductor device manufacturing method A semiconductor manufacturing apparatus which continuously executes oxidation and CVD in a multiprocess apparatus includes an internal apparatus controller which selects the type of process and supplies a start signal and stop signal for the process to the multiproc...	07/25/2006
6905982	Method of manufacturing a semiconductor integrated circuit device A CVD device (100) used for depositing a silicon nitride has a structure in which a hot wall furnace (103) for thermally degrading a source gas and a chamber (101) for forming a film over a surface of a wafer (1) are separated from each o...	06/14/2005
6830995	Method of diffusing zinc into article and method of heating article Provided is a method of heating a semiconductor substrate having a surface of a III-V compound semiconductor containing phosphorus as a group V constituent element. The method comprises the steps of: (a) providing an alloy in a heating furnace, the alloy including t...	12/14/2004
6815229	In situ monitoring of sheet resistivity of silicides during rapid thermal annealing using electrical methods A system and method for analyzing sheet resistivity of a layer on a wafer employing electrical methods and for controlling rapid thermal annealing (RTA) of the layer is provided. The system includes components for performing RTA on the layer and components for analy...	11/09/2004
6723541	Method of producing semiconductor device and semiconductor substrate A method of producing a strain-relaxed Si—Ge virtual substrate for use in a semiconductor substrate which is planar and of less defects for improving the performance of a field effect semiconductor device, which method comprises covering an Si—Ge layer formed on...	04/20/2004
6559039	Doped silicon deposition process in resistively heated single wafer chamber A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive he...	05/06/2003
6500741	Method for making high voltage device An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon...	12/31/2002
6479885	High voltage device and method An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon...	11/12/2002
6376346	High voltage device and method for making the same An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon...	04/23/2002
6251800	Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performance An ultrathin gate dielectric and a method for forming the same are provided. The gate dielectric is believed to allow enhanced performance of semiconductor devices including transistors and dual-gate memory cells. A low-power, low-pressure plasma-enhanced...	06/26/2001
6220091	Liquid level pressure sensor and method The present invention provides methods and systems for forming deposition films on semiconductor wafers. In particular, the present invention measures the amount of liquid remaining in a bubbler ampule of a semiconductor processing system used for chemica...	04/24/2001
6156122	Depositor for depositing a dielectric layer with fewer metallic impurities and a method for reducing the content of the metallic impurities in the dielectric layer by using this depositor The present invention is characterized by setting a filter in the O3 -pipe of the depositor used to depositing a dielectric layer, wherein the filter is used to adsorb the metallic impurities in the O3 /O2 pipe. Therefore,...	12/05/2000
5994209	Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed i...	11/30/1999
5516724	Oxidizing methods for making low resistance source/drain germanium contacts Low resistance contacts for microelectronic devices such as field effect transistors are formed by defining an area on a face of a semiconductor substrate, and forming a layer of an alloy on the defined area wherein the alloy comprises a first material an...	05/14/1996
4609414	Emitter finger structure in a switching transistor A particular emitter finger structure in an NPN type switching transistor. The emitter zone is divided into two lateral N type strips. In the central part are provided, on the one hand, a diffusion of N type dopants whose junction depth is small and, on t...	09/02/1986
4558507	Method of manufacturing semiconductor device The present invention relates to a method of forming a diffused region with a shallow junction having a refractory metal silicide layer thereon. At first, the refractory metal silicide layer is selectively formed on a silicon substrate of one conductivity...	12/17/1985
4154632	Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device An aluminum diffusion source layer is formed by vacuum evaporation on a major surface of a silicon substrate. The silicon substrate is heated to form an aluminum-silicon alloy layer, an aluminum doped silicon recrystallization layer and an aluminum diffus...	05/15/1979
4104786	Method of manufacture of a semiconductor device Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Is...	08/08/1978
4021269	Post diffusion after temperature gradient zone melting Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smoo...	05/03/1977
3988766	Multiple P-N junction formation with an alloy droplet A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting process through a body of semiconductor material leaving behin...	10/26/1976
3972741	Multiple p-n junction formation with an alloy droplet A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting process through a body of semiconductor material leaving behin...	08/03/1976
3956024	Process for making a semiconductor varistor embodying a lamellar structure A varistor has a lamellar structured body of semiconductor material. The lamellar structure is produced by migrating "wires" of metal by a temperature gradient zone melting process to form a plurality of alternate regions of opposite type conductivity in ...	05/11/1976

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Class 438/541 - Including diffusion after fusing step