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| Number | Title | Issue Date |
| 8105928 | Graphene based switching device having a tunable bandgap A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an applied strain that reduces an interlayer spacing between the bi-lay... | 01/31/2012 |
| 7268065 | Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se... | 09/11/2007 |
| 7189623 | Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ... | 03/13/2007 |
| 6531379 | High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the pr... | 03/11/2003 |
| 3998661 | Uniform migration of an annular shaped molten zone through a solid body Annular regions of a predetermined type conductivity are produced in a body of semiconductor material by a temperature gradient zone melting process embodying both noncentro-symmetric rotation of the body as well as secondary rotation of the body about it... | 12/21/1976 |
| 3957547 | Method for doping semiconductors in centrifuge A semiconductor material is doped or alloyed under vacuum with an impurity by thermal decomposition and by sedimentation resulting from centrifugal force. The doping material is alternatively applied by evaporation before being subjected to centrifugal fo... | 05/18/1976 |
