Bizarre Patents
Mouthguard made at least partially from an edible candy
A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.
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| Number | Title | Issue Date |
| 7470604 | Method for manufacturing display device The present invention, the quality of the surface of a substrate is improved and the wettability thereof is controlled by light irradiation from the reverse side with respect to the substrate having the conductive layer. A conductive material or an insulating materi... | 12/30/2008 |
| 7329604 | Semiconductor device and method for fabricating the same The method for fabricating a semiconductor device comprises the step of forming a Co film 72 on a gate electrode 30 having a gate length Lg of below 50 nm including 50 nm; the first thermal processing step of making thermal processing to rea... | 02/12/2008 |
| 7268065 | Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se... | 09/11/2007 |
| 7189623 | Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ... | 03/13/2007 |
| 6980282 | Method for modulating shapes of substrates The present invention is directed to a method for modulating shapes of a substrate, having first and second opposed surfaces. This is achieved by creating a pressure differential between differing regions of the first opposed surface to attenuate structural distorti... | 12/27/2005 |
| 6943097 | Atomic layer deposition of metallic contacts, gates and diffusion barriers The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic sil... | 09/13/2005 |
| 6846730 | Two stage etching of silicon nitride to form a nitride spacer A method of etching nitride over oxide is provided for the formation of vertical profile nitride spacers with high uniformity while maintaining the integrity of underlying thin oxide layers. The method includes providing a first gas flow including a first fluorocarb... | 01/25/2005 |
| 6737340 | Method and apparatus for self-doping contacts to a semiconductor The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously dop... | 05/18/2004 |
| 6632730 | Method for self-doping contacts to a semiconductor The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simulta... | 10/14/2003 |
| 6632728 | Increasing the electrical activation of ion-implanted dopants We have found that under certain prescribed conditions a co-implantation process can be effective in increasing the electrical activation of implanted dopant ions. In accordance with one aspect of our invention, a method of making a semiconductor device i... | 10/14/2003 |
| 6362083 | Method for fabricating locally reinforced metallic microfeature A method for fabricating a locally reinforced metallic microfeature on a substrate provided preferably with an electrical contacting or a driving circuit, and on an organic, patterned sacrificial layer, which is removed after the metallic microfeature is ... | 03/26/2002 |
| 5356837 | Method of making epitaxial cobalt silicide using a thin metal underlayer An epitaxial cobalt silicide film is formed using a thin metal underlayer, which is placed underneath a cobalt layer prior to a heating step which forms the silicide film. More specifically, a refractory metal layer comprising tungsten, chromium, molybden... | 10/18/1994 |
| 4184897 | Droplet migration doping using carrier droplets Carrier droplets are employed in moving melts of metal-rich semiconductor material through a solid body of semiconductor material by thermal gradient zone melting. One element of the droplet is selected for its ability to penetrate and migrate through the... | 01/22/1980 |
| 4178192 | Promotion of surface film stability during initiation of thermal migration Titanium, aluminum, lithium, magnesium and calcium are metal wetting agents which are capable of reducing the oxide of a semiconductor material naturally occurring, deposited or grown on a body of the semiconductor material and increasing the solubility o... | 12/11/1979 |
| 4089713 | Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy A method of adjusting donor concentration in a body of mercury cadmium telluride comprising the steps of contacting the mercury cadmium telluride with a quantity of donor material selected from the group consisting of gallium and gallium alloys containing... | 05/16/1978 |
| 4076559 | Temperature gradient zone melting through an oxide layer Disclosed is a method of manufacturing semiconductor devices by thermomigrating impurities through an oxide layer.... | 02/28/1978 |
