Class 438/537 - Fusing dopant with substrate (i.e., alloy junction)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for incorporating an electrically active impurity
No. of patents: 37
Last issue date: 09/11/2007

Number	Title	Issue Date
7268065	Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se...	09/11/2007
7262119	Method for incorporating germanium into a semiconductor wafer A method of fabricating a semiconductor wafer includes fabricating a gate electrode on a silicon substrate of the semiconductor device and incorporating germanium into the silicon substrate thereafter. ...	08/28/2007
7189623	Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ...	03/13/2007
7134509	Portable power tool with rotating output shaft and overload protection A portable power tool is provided which includes a rotation motor (11), an output shaft (14), a gearing (13) and a drive spindle (12; 112) connecting the gearing (13) to the motor (11). A drive line arresting lock device (	11/14/2006
7109098	Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the w...	09/19/2006
7060547	Method for forming a junction region of a semiconductor device A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to f...	06/13/2006
7012008	Dual spacer process for non-volatile memory devices In a two-step spacer fabrication process for a non-volatile memory device, a thin oxide layer is deposited on a wafer substrate leaving a gap in the core of the non-volatile memory device. Implantation and/or oxide-nitride-oxide removal can be accomplished through t...	03/14/2006
6872644	Semiconductor device with non-compounded contacts, and method of making A semiconductor device includes source and drain contact regions which include a non-compounded combination of a semiconductor material and at least one metal. The metal may include an elemental metal, such as gold or aluminum, or may include an intermetallic. The c...	03/29/2005
6784018	Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry A first conductive electrode material is formed on a substrate. Chalcogenide comprising material is formed thereover. The chalcogenide material comprises AxSey. A silver comprising layer is formed over the chalcogenide material. The silver is i...	08/31/2004
6709959	Semiconductor device having a shallow junction and a fabrication process thereof A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then anne...	03/23/2004
6703295	Method and apparatus for self-doping contacts to a semiconductor The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simulta...	03/09/2004
6531379	High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the pr...	03/11/2003
6507626	Bandpass phase tracker that automatically samples at prescribed carrier phases when digitizing VSB I-F signal A bandpass phase tracker automatically samples at prescribed carrier phases when digitizing a vestigial-sideband intermediate-frequency signal, which VSB I-F signal is modulated in accordance with a baseband symbol code of a prescribed symbol frequency. H...	01/14/2003
6500741	Method for making high voltage device An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon...	12/31/2002
6479885	High voltage device and method An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon...	11/12/2002
6376346	High voltage device and method for making the same An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semicon...	04/23/2002
6287881	Semiconductor device with low parasitic capacitance A method of fabricating a semiconductor device having active components grown on a substrate, involves providing a semiconductor substrate on which the active components are grown, and doping the semiconductor substrate to render it non conductive and the...	09/11/2001
5589408	Method of forming an alloyed drain field effect transistor and device formed A method of forming an alloyed drain field effect transistor (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electr...	12/31/1996
5561079	Stalagraphy A method of lithography is disclosed for making very small structures (10-6 m and smaller) on a surface such as in the manufacture of semiconductor devices. Many micron-sized or smaller droplets of a suitable material are formed on the surface,...	10/01/1996
4703553	Drive through doping process for manufacturing low back surface recombination solar cells A method for providing deep impurity doped regions under the back contacts of a solar cell. In a semiconductor wafer with a p-n junction therein defining an n+ layer emitter and p-type layer bulk, a p+ layer is formed in the p-type layer under the back su...	11/03/1987
4436557	Modified laser-annealing process for improving the quality of electrical P-N junctions and devices The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor ma...	03/13/1984
4392010	Photovoltaic cells having contacts and method of applying same Electrically conductive contacts containing zinc or other solderable metals, and aluminum are formed on the front and/or back surfaces of a solar cell. They are deposited by spraying the metals onto the cell surfaces, together or as layers, with the alumi...	07/05/1983
4389256	Method of manufacturing pn junction in group II-VI compound semiconductor A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming the...	06/21/1983
4349691	Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion A method of making a silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, in which the back surface junction of the cell is formed by aluminum alloying at relatively low temperatures....	09/14/1982
4301188	Process for producing contact to GaAs active region The stability of semiconductor devices such as gallium arsenide field effect transistors are significantly improved by controlling the process leading to the production of the drain contact. The process requires that the annealing of metals used to form t...	11/17/1981
4297391	Method of applying electrical contacts to a photovoltaic cell A method of forming an electrical contact on the surface of a photovoltaic cell in which particles of electrically conductive material are formed at a temperature in excess of the alloying temperature of the material and silicon, and thereafter spraying, ...	10/27/1981
4297149	Method of treating SiPOS passivated high voltage semiconductor device The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400° C. to 525° C. range. The original breakdown voltage is recovered by annealing the devices at a ...	10/27/1981
4293587	Low resistance backside preparation for semiconductor integrated circuit chips To provide an electrically conductive p-type wafer backside for semiconductor integrated circuit chips (die), a process is provided consisting of applying a thin layer of aluminum on a silicon dioxide free surface of the chip, followed by a layer of gold,...	10/06/1981
4246693	Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of...	01/27/1981
4226017	Method for making a semiconductor device A method for use in making semiconductor type electrical devices such as solar cells. In the method, a wafer of semiconductor material having two major surfaces is provided, the wafer being doped with an impurity of one conductivity type. A layer of a met...	10/07/1980
4128897	Archival memory media and method for information recording thereon Binary information is stored in a semiconductor archival memory medium by formation of a region of an alloy, of the semiconductor material and a non-doping material, at each of a plurality of potential memory sites at which a first binary value of informa...	12/05/1978
4126496	Method of making a single chip temperature compensated reference diode A reference diode and a method for making same are described, wherein a single wafer of semiconductive material is processed to provide a reverse PN junction acting in its breakdown region and to provide one or more forward PN junctions in electrical seri...	11/21/1978
4081794	Alloy junction archival memory plane and methods for writing data thereon A memory plane for an archival, non-volatile mass storage memory has a planar semiconductor diode with each of a plurality of small P-N junction diodes alloyed into the surface of its fabricated layer responsive to a selectively-actuated scanned energy be...	03/28/1978
4066485	Method of fabricating a semiconductor device A method of fabricating a semiconductor device comprises steps for forming recesses which can be used in the subsequent visual alignment of photomasks. The novel recess forming steps are so linked with a conventional processing step that the total number ...	01/03/1978
4056879	Method of forming silicon solar energy cell having improved back contact A silicon solar energy cell having a diffusant junction extending inwardly from one surface, an aluminum-silicon junction of the opposite polarity extending inwardly from the other surface, and a film of aluminum-oxygen-diffusant formed over the aluminum-...	11/08/1977
3975756	Gadolinium doped germanium A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a p-n junction....	08/17/1976
3965279	Ohmic contacts for group III-V n-type semiconductors A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The ...	06/22/1976

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Class 438/537 - Fusing dopant with substrate (i.e., alloy junction)