Bizarre Patents
Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 7268065 | Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se... | 09/11/2007 |
| 7189623 | Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ... | 03/13/2007 |
| 7129516 | Ion recoil implantation and enhanced carrier mobility in CMOS device An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology ... | 10/31/2006 |
| 7042066 | Dual-trench isolated crosspoint memory array A memory array dual-trench isolation structure and a method for forming the same have been provided. The method comprises: forming a p-doped silicon (p-Si) substrate; forming an n-doped (n+) Si layer overlying the p-Si substrate; prior to forming the n+ Si bit lines... | 05/09/2006 |
| 6083780 | Semiconductor device and method of fabrication thereof A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a s... | 07/04/2000 |
| 5672541 | Ultra-shallow junction semiconductor device fabrication A practical, low-cost and low hazard method and apparatus for the fabrication of ultra large scale integrated circuits is provided. Plasma source ion implantation (PSII) is employed for realizing required ultra-shallow doping junctions, while avoiding pre... | 09/30/1997 |
| 4904611 | Formation of large grain polycrystalline films A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and... | 02/27/1990 |
| 4764478 | Method of manufacturing MOS transistor by dual species implantation and rapid annealing A semiconductor apparatus manufacturing method which is characterized in that the process of distributing an impurity in the gate electrode of the semiconductor apparatus is improved by the steps of depositing a gate oxide layer on a silicon substrate, mo... | 08/16/1988 |
| 4570324 | Stable ohmic contacts for gallium arsenide semiconductors Ohmic contacts are formed on an n-type gallium arsenide semiconductor by applying a layer of nickel to a contact surface of the semiconductor, bombarding the nickel layer with a beam of germanium ions to drive nickel and germanium atoms into the contact a... | 02/18/1986 |
| 4494997 | Ion implant mask and cap for gallium arsenide structures A mask and encapsulating layer suitable for use on gallium arsenide substrates is described incorporating a layer of germanium selenide which is photosensitive and may be exposed and developed to form a mask suitable for ion implantation and which may als... | 01/22/1985 |
| 4452644 | Process for doping semiconductors The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said... | 06/05/1984 |
| 4368083 | Process for doping semiconductors The present invention relates to a process for doping semiconductors, comprising the successive steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bomb... | 01/11/1983 |
