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| Number | Title | Issue Date |
| 8080467 | Silicon-based visible and near-infrared optoelectric devices In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction w... | 12/20/2011 |
| 8067303 | Solid state energy conversion device A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A ther... | 11/29/2011 |
| 8030192 | Process for manufacturing a large-scale integration MOS device and corresponding MOS device A process for manufacturing a MOS device and the MOS device manufactured thereby are disclosed. The process includes in a semiconductor layer forming a gate structure above the semiconductor layer; forming a first doped region within a first surface portion of the s... | 10/04/2011 |
| 7947584 | Suitably short wavelength light for laser annealing of silicon in DSA type systems The present invention generally relates to a thermal processing apparatus and method that permits a user to index one or more preselected light sources capable of emitting one or more wavelengths to a collimator. Multiple light sources may permit a single apparatus ... | 05/24/2011 |
| 7915153 | Passivation film and method of forming the same A passivation film and a method of forming the same are provided, the passivation film being used in a plasma display panel etc. In the passivation film, a first MgO layer, an intervening layer, and a second MgO layer are laminated and a laser is then irradiated to ... | 03/29/2011 |
| 7888251 | Photo-assisted hydrogenation process Apparatus and method are provided for hydrogenating semiconductor or other materials by ultraviolet (UV) radiation in the presence of hydrogen. Hydrogen uptake may be optimized by selection of temperature and wavelength of the UV radiation. Patterned areas may be se... | 02/15/2011 |
| 7838402 | Method of manufacturing electronic apparatus and electronic apparatus A method of manufacturing an electronic apparatus having a resist pattern provided over a substrate provided with a thin film transistor, the method includes the steps of forming by application a resist film over the substrate in the state of covering the thin film ... | 11/23/2010 |
| 7811914 | Apparatus and method for increasing thermal conductivity of a substrate An apparatus and method is disclosed for increasing the thermal conductivity in a substrate of a non-wide bandgap material comprising the steps of directing a thermal energy beam onto the substrate in the presence of a first doping gas for converting a region of the... | 10/12/2010 |
| 7799666 | Method of spatially selective laser-assisted doping of a semiconductor A method utilizing spatially selective laser doping for irradiating predetermined portions of a substrate of a semiconductor material is disclosed. Dopants are deposited onto the surface of a substrate. A pulsed, visible beam is directed to and preferentially absorb... | 09/21/2010 |
| 7666772 | Heat treatment apparatus and method of manufacturing a semiconductor device A heat treatment apparatus which enables a heating process for a short time with high reproducibility in a manufacturing process of a MOS transistor manufactured using a semiconductor substrate, and a method of manufacturing a semiconductor device using the heat tre... | 02/23/2010 |
| 7547619 | Method of introducing impurity, device and element A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a... | 06/16/2009 |
| 7485554 | Method of increasing a free carrier concentration in a semiconductor substrate A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free... | 02/03/2009 |
| 7419887 | Laser assisted nano deposition An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto t... | 09/02/2008 |
| 7410852 | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a sour... | 08/12/2008 |
| 7387974 | Methods for providing gate conductors on semiconductors and semiconductors formed thereby A method of providing a gate conductor on a semiconductor is provided. The method includes defining an organic polymer plating mandrel on the semiconductor, activating one or more sites of the organic polymer plating mandrel, binding a seed layer to the activated si... | 06/17/2008 |
| 7365346 | Ion-implanting apparatus, ion-implanting method, and device manufactured thereby An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured wi... | 04/29/2008 |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7338913 | Semiconductor device, manufacturing method thereof, and electronic device A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film ... | 03/04/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7326630 | Method of fabricating semiconductor device utilizing laser irradiation Crystallization by irradiation of laser light forms a plurality of convex portions (ridges) on the surface of a crystalline semiconductor film that is obtained, which decreases a film quality. A method of laser irradiation comprises the steps of: overlapping an area... | 02/05/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| RE39988 | Deposition of dopant impurities and pulsed energy drive-in A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure ... | 01/01/2008 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7312151 | System for ultraviolet atmospheric seed layer remediation The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor subs... | 12/25/2007 |
| 7309655 | Etching method in a semiconductor processing and etching system for performing the same Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching ... | 12/18/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7282427 | Method of implanting a substrate and an ion implanter for performing the method An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the... | 10/16/2007 |
| 7262106 | Absorber layer for DSA processing A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient... | 08/28/2007 |
| 7253424 | Method of implanting a substrate and an ion implanter for performing the method An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the... | 08/07/2007 |
| 7253120 | Selectable area laser assisted processing of substrates A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations o... | 08/07/2007 |
| 7250667 | Selectable open circuit and anti-fuse element An integrated circuit is provided with a semiconductor substrate that is doped with a set concentration of an oxidizable dopant of a type that segregates to the top surface of a silicide when the semiconductor substrate is reacted to form such a silicide. A gate die... | 07/31/2007 |
| 7244669 | Patterning of devices A method for forming an organic or partly organic switching device, comprising: depositing layers of conducting, semiconducting, insulating, or surface modifying layers by solution processing and direct printing; and defining high-resolution patterns of these layers... | 07/17/2007 |
| 7238597 | Boron ion delivery system A boron ion plasma, generated by use of a cathodic arc, is manipulated and delivered to a large flat product such as a silicon wafer with boron ion energies suitable for incorporation of boron atoms into solid state devices as one of the key steps in manufacturing s... | 07/03/2007 |
| 7235797 | Method of implanting a substrate and an ion implanter for performing the method An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the... | 06/26/2007 |
| 7233022 | Thin film transistor including a polysilicon film In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the subs... | 06/19/2007 |
| 7220655 | Method of forming an alignment mark on a wafer, and a wafer comprising same Disclosed herein is a method comprised of providing a wafer comprised of a bulk substrate, an insulating layer positioned above the bulk substrate, and a semiconducting layer positioned above the insulating layer, forming an opening in the semiconducting layer and t... | 05/22/2007 |
| 7205215 | Fabrication method of thin film transistor The present invention provides a fabrication method of thin film transistor including a step of forming an amorphous silicon layer on a substrate, a step of forming a capping layer on the amorphous silicon layer, a step of forming a metal catalyst layer on the cappi... | 04/17/2007 |
| 7202568 | Semiconductor passivation deposition process for interfacial adhesion A method of passivating an integrated circuit (IC) is provided. An insulating layer is formed onto the IC. An adhesion layer is formed onto a surface of the insulating layer by treating the surface of the insulating layer with a gas. A first passivation layer is for... | 04/10/2007 |
| 7189623 | Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ... | 03/13/2007 |
