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| Number | Title | Issue Date |
| 7902054 | Schottky barrier semiconductor device and method for manufacturing the same A silicon carbide Schottky barrier semiconductor device provided with a Ta electrode as a Schottky electrode, in which the Schottky barrier height is controlled to a desired value in a range where power loss is minimized without increasing the n factor. The method f... | 03/08/2011 |
| 7863172 | Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye... | 01/04/2011 |
| 7375019 | Image sensor and method for fabricating the same An image sensor and a method for fabricating the same are disclosed, to improve a contact quality between a contact plug and a source diffusion layer. The image sensor includes a photodiode in an active area of a semiconductor substrate, for receiving incident exter... | 05/20/2008 |
| 7300308 | Patch panel An angled patch panel having left and right end panel sections and left and right central panel sections, each section having at least one connector mounting aperture. The left central panel section and left end panel section being attached together at an angle othe... | 11/27/2007 |
| 7268065 | Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se... | 09/11/2007 |
| 7247226 | Coating support and method for the selective coating of conductive tracks on one such support The present invention concerns a lining support comprising a plurality of conductive pads (12) associated with a shared addressing contact (18) and means of selecting at least one pad to be lined by electrochemical means among the plurality of pads. In... | 07/24/2007 |
| 7220661 | Method of manufacturing a Schottky barrier rectifier A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 05/22/2007 |
| 7189623 | Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ... | 03/13/2007 |
| 7141861 | Semiconductor device and manufacturing method there A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is her... | 11/28/2006 |
| 6900483 | Semiconductor device and method for manufacturing the same A Schottky diode includes a semiconductor substrate made of 4H—SiC, an epitaxially grown 4H—SiC layer, an ion implantation layer, a Schottky electrode, an ohmic electrode, and an insulative layer made of a thermal oxide film. The Schottky electrode and the insul... | 05/31/2005 |
| 6846729 | Process for counter doping N-type silicon in Schottky device Ti silicide barrier A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dos... | 01/25/2005 |
| 6806172 | Physical vapor deposition of nickel Nickel film formation is implemented by heating a deposition chamber during deposition of nickel on a substrate or between processing of two or more substrates or both. Embodiments include forming a nickel silicide on a composite having an exposed silicon surface by... | 10/19/2004 |
| 6750088 | SOI MOS field effect transistor and manufacturing method therefor A device isolation region made up of a silicon oxide film, which is perfectly isolated up to the direction of the thickness of an SOI silicon layer, and an activation region of the SOI silicon layer, whose only ends are locally thinned, are formed on an SOI substrat... | 06/15/2004 |
| 6656832 | Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties A method for fabricating a microelectronic fabrication provides for forming a patterned conductor layer into a via defined by a pair of dielectric layers. Within the method, the via is plasma treated prior to forming therein the patterned conductor layer ... | 12/02/2003 |
| 6555471 | Method of making a void-free aluminum film A method for depositing an aluminum film limits the growth of voids and notches in the aluminum film and forms and aluminum film with a reduced amount of voids and notches. The first step of the method is to form an underlying layer upon which is deposite... | 04/29/2003 |
| 6316342 | Low turn-on voltage indium phosphide Schottky device and method A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including Inx Al1-x AS with x>0.6, or else including a chirped graded superlattice in which successive periods of the... | 11/13/2001 |
| 6294445 | Single mask process for manufacture of fast recovery diode A single mask process for manufacture of a FRED employs a thick oxide layer over an N type silicon surface and a thin nitride layer over the oxide. A single mask defines FRED device spaced P diffusions. The oxide spanning the P diffusions is laterally etc... | 09/25/2001 |
| 5478764 | Method of producing semiconductor device including Schottky barrier diode incorporating a CVD refractory metal layer A method of producing a semiconductor device including a Schottky barrier diode (SBD) comprising the steps of: selectively forming an insulating layer having a first contact hole and a second contact hole, on a (100) silicon semiconductor substrate; selec... | 12/26/1995 |
| 5268316 | Fabrication process for Schottky diode with localized diode well An improved Schottky diode structure (4) is formed by retrograde diffusing an N+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried ... | 12/07/1993 |
| 4997788 | Display device including lateral Schottky diodes In a display device including active switching units, lateral Schottky diodes are used as switching elements. In the lateral Schottky diodes a sub-micron distance between the Schottky electrode and the opposing electrode contacting the semiconductor body ... | 03/05/1991 |
| 4933295 | Method of forming a bipolar transistor having closely spaced device regions A method of forming a bipolar transistor comprising the steps of forming a base region in a semiconductor structure and disposing an emitter region on a surface of a first portion of the base region, the emitter region having upper and side surfaces. An a... | 06/12/1990 |
| 4871686 | Integrated Schottky diode and transistor An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip. Nested N-, P-, N- and P+ regions are fo... | 10/03/1989 |
| 4859616 | Method of making schottky contacts on semiconductor surfaces In a Schottky contact on a semiconductor surface (3) comprising in the semiconductor edge region of the Schottky contact a doped guard ring (7) applied as self-aligning, and in which portions of the semiconductor edge region are shielded by at least one l... | 08/22/1989 |
| 4837174 | Method for producing thin conductive and semi-conductive layers in mono-crystal silicon A method for producing thin conductive or semiconductive layers embedded in silicon in the manufacture of structures for integrated circuits and the like. The invention is characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-d... | 06/06/1989 |
| 4638551 | Schottky barrier device and method of manufacture An improved Schottky barrier device and method of manufacture is disclosed. The device has a semiconductor layer of first conductivity type; an insulating layer covering one face of the semiconductor layer, and has an opening therein. A conductor layer co... | 01/27/1987 |
| 4548671 | Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors A method of making an imager which includes substrate of single crystalline silicon having on one surface of a plurality of spaced detectors arranged in columns and a charge-coupled device between each pair of columns of the detectors. The charge-coupled ... | 10/22/1985 |
| 4481041 | Method for producing Schottky diodes Method for manufacturing Schottky diodes which have a doped self-aligning guard ring in the fringe region of the Schottky contact in the semiconductor layer underneath, in which the guard ring is inserted into the semiconductor layer by means of implantat... | 11/06/1984 |
| 4441931 | Method of making self-aligned guard regions for semiconductor device elements A method for forming a guard zone (21) is disclosed, suitable for a guard ring for a Schottky barrier diode or for a channel guard zone for protecting the channel inversion layer of an insulated gate field effect transistor. The method uses anisotropic (s... | 04/10/1984 |
| 4418468 | Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. ... | 12/06/1983 |
| 4357178 | Schottky barrier diode with controlled characteristics and fabrication method A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The o... | 11/02/1982 |
| 4339869 | Method of making low resistance contacts in semiconductor devices by ion induced silicides A low resistance electrical contact is made to a silicon substrate by forming a layer of a refractory metal on the substrate and thereafter applying a dosage of ions through the layer of refractory metal to the substrate to form a layer of a compound of t... | 07/20/1982 |
| 4338139 | Method of forming Schottky-I2 L devices by implantation and laser bombardment A method for manufacturing a semiconductor device having a Schottky junction which comprises a process for burying first and second regions of a second conductivity type spaced from each other in a semiconductor body of a first conductivity type, a proces... | 07/06/1982 |
| 4310362 | Method of making Schottky diode with an improved voltage behavior The voltage behaviour of a Schottky diode is improved by providing a Schottky diode of the type comprising an epitaxial layer locally covered with a metal layer and by depleting the space charge zone in the epitaxial layer at the periphery of the metal la... | 01/12/1982 |
| 4260431 | Method of making Schottky barrier diode by ion implantation and impurity diffusion A Schottky barrier diode is formed in a low impurity concentration N-type substrate by ion implanting N-type impurities to form a deep region having increased impurity surface concentration of at least 1016 carriers per cubic centimeters, formi... | 04/07/1981 |
| 4243435 | Bipolar transistor fabrication process with an ion implanted emitter A very high current ion implanted emitter is formed in a diffused base. Windows are made through the silicon nitride and silicon dioxide layes to both the base contact and the emitter regions using a resist mask. These regions are then protected by resist... | 01/06/1981 |
| 4119446 | Method for forming a guarded Schottky barrier diode by ion-implantation An improved method for forming a guard ring Schottky barrier diode using ion implantation. Diodes formed in accordance with this method require less area but exhibit breakdown voltage comparable to known prior art guarded Schottky barrier diodes. The meth... | 10/10/1978 |
| 4107835 | Fabrication of semiconductive devices An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at a particular depth; depositing a suitable contact material, such as platinum, over such region; and then heating the wafer... | 08/22/1978 |
| 4096622 | Ion implanted Schottky barrier diode A Schottky barrier diode having a subsurface metalsemiconductor rectifying barrier with electrical rectification properties immune to semiconductor surface contamination. A special ion implantation technique is used to produce a very thin but strongly met... | 06/27/1978 |
| 4063964 | Method for forming a self-aligned schottky barrier device guardring The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces the area of the chip used by other guardring forming techniq... | 12/20/1977 |
| 4045248 | Making Schottky barrier devices A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this layer and forming a Schottky barrier with the body portion. ... | 08/30/1977 |
