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Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
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| Number | Title | Issue Date |
| 8187958 | Substrate processing method and method of manufacturing crystalline silicon carbide (SIC) substrate The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness i... | 05/29/2012 |
| 8124510 | Method of manufacturing a silicon carbide semiconductor device A method of manufacturing a silicon carbide semiconductor device is disclosed in which a trench and a hole are controlled to have a predetermined configuration even if the silicon carbide semiconductor device is subjected to a heat treatment at a temperature of not ... | 02/28/2012 |
| 8097530 | Method for manufacturing SIC semiconductor device A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity in the SiC layer; applying a cap layer on the SiC la... | 01/17/2012 |
| 7998848 | Method of producing field effect transistor The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing th... | 08/16/2011 |
| 7981780 | Method and apparatus for processing semiconductor wafer after impurity implantation A semiconductor wafer implanted with impurities is loaded into a chamber. After oxygen gas is introduced around the semiconductor wafer, the semiconductor wafer is irradiated with a flash of light from flash lamps for an irradiation time not shorter than 0.1 millise... | 07/19/2011 |
| 7977224 | Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby A method of preventing the escape of nitrogen during the activation of ion implanted dopants in a Group III-nitride semiconductor compound without damaging the Group III-nitride semiconductor comprising: depositing a first layer of another Group III-nitride that act... | 07/12/2011 |
| 7943496 | Method of manufacturing GaN-based transistors A method of manufacturing a GaN-based field effect transistor is provided by which a lower resistance and a higher breakdown voltage are obtained and which is less affected by a current collapse. A method of manufacturing the GaN-based field effect transistor(s) can... | 05/17/2011 |
| 7875537 | High temperature ion implantation of nitride based HEMTs A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted produce an improved ohmic contact between the layer and contact metals, w... | 01/25/2011 |
| 7867882 | Method of manufacturing silicon carbide semiconductor device A method of manufacturing an SiC semiconductor device includes the steps of ion implanting a dopant at least in a part of a surface of an SiC single crystal, forming an Si film on the surface of the ion-implanted SiC single crystal, and heating the SiC single crysta... | 01/11/2011 |
| 7855132 | Method of manufacturing bonded wafer The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bondi... | 12/21/2010 |
| 7820534 | Method of manufacturing silicon carbide semiconductor device A method of manufacturing a silicon carbide semiconductor device includes ion-implanting an impurity in a surface of a silicon carbide wafer, and forming a carbon protection film of a predetermined thickness over all surfaces of the silicon carbide wafer, which has ... | 10/26/2010 |
| 7811913 | Method of fabricating a low, dark-current germanium-on-silicon pin photo detector A method of fabricating a low, dark-current germanium-on-silicon PIN photo detector includes preparing a P-type silicon wafer; implanting the P-type silicon wafer with boron ions; activating the boron ions to form a P+ region on the silicon wafer; forming a boron-do... | 10/12/2010 |
| 7807553 | Substrate heating apparatus and semiconductor fabrication method A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receivi... | 10/05/2010 |
| 7795121 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or poly... | 09/14/2010 |
| 7772098 | Method for manufacturing semiconductor device On one face of a semiconductor wafer 1 having a first face (principal face) 1a and a second face (rear face) 1b, a protection film 2 is formed. When allowing the semiconductor wafer 1 to be attracted onto an attractin... | 08/10/2010 |
| 7737012 | Manufacturing method of a semiconductor device An amorphous layer 101 is formed in a region from a surface of a silicon substrate 100 to a first depth A. At this time, defects 103 are generated near an amorphous-crystal interface 102. By heat treatment, the crystal structure of the am... | 06/15/2010 |
| 7718519 | Method for manufacturing silicon carbide semiconductor element A method of producing a silicon carbide semiconductor device, including: step (A) of forming an impurity-doped region by implanting impurity ions 3 into at least a portion of a silicon carbide layer 2 formed on a first principal face of a silicon carbi... | 05/18/2010 |
| 7629239 | Method of fabricating a semiconductor device with a dopant region in a lower wire A semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a lower wire, an interlayer insulating film formed on the lower wire and having a via hole exposing the upper surface of the lower wire, a diffusion barrier ... | 12/08/2009 |
| 7419892 | Semiconductor devices including implanted regions and protective layers and methods of forming the same Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, ... | 09/02/2008 |
| 7396717 | Method of forming a MOS transistor A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the... | 07/08/2008 |
| 7396747 | Hetero-integrated strained silicon n- and p-MOSFETs The present invention provides semiconductor structures and a method of fabricating such structures for application of MOSFET devices. The semiconductor structures are fabricated in such a way so that the layer structure in the regions of the wafer where n-MOSFETs a... | 07/08/2008 |
| 7361562 | Method of manufacturing semiconductor device Provided is a method of manufacturing a semiconductor device capable of forming a thin high-quality gate oxide layer by suppressing occurrence of recoiled oxygen due to ion implanting. The method of manufacturing a semiconductor device includes steps of: removing an... | 04/22/2008 |
| 7337019 | Integration of fault detection with run-to-run control Semiconductor wafers are processed in conjunction with a manufacturing execution system using a run-to-run controller and a fault detection system. A recipe is received from the manufacturing execution system by the run-to-run controller for controlling a tool. The ... | 02/26/2008 |
| 7329614 | Heat resistant ohmic electrode and method of manufacturing the same An aspect of the present invention provides an ohmic electrode that includes an SiC (silicon carbide) substrate, an impurity region selectively formed in a surface of the SiC substrate, an insulating film formed on the surface of the SiC substrate, a contact hole op... | 02/12/2008 |
| 7285497 | Mask, method for manufacturing a mask, method for manufacturing an electro-optical device, and electronic equipment A mask includes a silicon member, and a portion defining an opening penetrating the silicon member; and the corner of the opening is rounded. ... | 10/23/2007 |
| 7276431 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 10/02/2007 |
| 7273800 | Hetero-integrated strained silicon n- and p-MOSFETs The present invention provides semiconductor structures and a method of fabricating such structures for application of MOSFET devices. The semiconductor structures are fabricated in such a way so that the layer structure in the regions of the wafer where n-MOSFETs a... | 09/25/2007 |
| 7268065 | Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se... | 09/11/2007 |
| 7259094 | Apparatus and method for heat treating thin film An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater whic... | 08/21/2007 |
| 7242049 | Memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 07/10/2007 |
| 7239017 | Low-k B-doped SiC copper diffusion barrier films The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintai... | 07/03/2007 |
| 7235469 | Semiconductor device and method for manufacturing the same A semiconductor device suitable for the miniaturization and comprising properly controlled Si/SiGe gate electrode comprises an insulator formed on a semiconductor substrate, a first gate electrode formed on the insulator and including silicon-germanium, wherein a ge... | 06/26/2007 |
| 7229493 | 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor ... | 06/12/2007 |
| 7223615 | High emissivity capacitor structure The present invention is directed to controlling wafer temperature during rapid thermal processing. Regions and devices in an integrated circuit may be surrounded, inlayed, and overlaid with high absorptive structures to increase the average absorptivity of a region... | 05/29/2007 |
| 7221010 | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on... | 05/22/2007 |
| 7214627 | Graded junction termination extensions for electronic devices A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconducto... | 05/08/2007 |
| 7199030 | Method of manufacturing semiconductor device An impurity is ion-implanted with a silicon nitride film formed on a silicon substrate as a mask film to form a source/drain layer of a MOS transistor. Heat treatment for activating the impurity is done as it is without removing the silicon nitride film to thereby p... | 04/03/2007 |
| 7196929 | Method for operating a memory device having an amorphous silicon carbide gate insulator A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The... | 03/27/2007 |
| 7179731 | Hypercontacting The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region ... | 02/20/2007 |
| 7176049 | Method of increasing a free carrier concentration in a semiconductor substrate A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free... | 02/13/2007 |
