Bizarre Patents
A banana protective device for storing and transporting a banana carefully.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7977223 | Method of forming nitride semiconductor and electronic device comprising the same A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more th... | 07/12/2011 |
| 7785993 | Method of growing a strained layer A method of forming a Si strained layer 16 on a Si substrate 10 includes forming a first SiGe buffer layer 12 on the Si substrate 10. Then, the first SiGe buffer layer is implanted with an amorphising implant to render the first SiGe buff... | 08/31/2010 |
| 7754589 | Method for improving the quality of a SiC crystal A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or ... | 07/13/2010 |
| 7737011 | Method for improving the quality of an SiC crystal and an SiC semiconductor device It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method. A method for improving th... | 06/15/2010 |
| 7700467 | Methodology of implementing ultra high temperature (UHT) anneal in fabricating devices that contain sige Exemplary embodiments provide methods for implementing an ultra-high temperature (UHT) anneal on silicon germanium (SiGe) semiconductor materials by co-implanting carbon into the SiGe material prior to the UHT anneal. Specifically, the carbon implantation can be emp... | 04/20/2010 |
| 7601621 | Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mas... | 10/13/2009 |
| 7575988 | Method of fabricating a hybrid substrate A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor ... | 08/18/2009 |
| 7419892 | Semiconductor devices including implanted regions and protective layers and methods of forming the same Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, ... | 09/02/2008 |
| 7417248 | Transistor with shallow germanium implantation region in channel A method of manufacturing a transistor and a structure thereof, wherein a very shallow region having a high dopant concentration of germanium is implanted into a channel region of a transistor at a low energy level, forming an amorphous germanium implantation region... | 08/26/2008 |
| 7410876 | Methodology to reduce SOI floating-body effect A method for making a semiconductor device, comprising (a) providing a structure comprising a gate electrode (207) disposed on a substrate (203); (b) creating first (213) and second (214) pre-amorphization implant regions in the substrate... | 08/12/2008 |
| 7405131 | Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor The example embodiments disclose devices and methods to prevent silicide strapping of the Source/Drain to Body in semiconductor devices with S/D stressor. We provide isolation regions in the substrate and a gate structure over the substrate. We form recesses in the ... | 07/29/2008 |
| 7378334 | Nitride semiconductor device comprising bonded substrate and fabrication method of the same A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 | 05/27/2008 |
| 7378681 | Ridge waveguide device surface passivation by epitaxial regrowth A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide... | 05/27/2008 |
| 7364993 | Method of enhancing the photoconductive properties of a semiconductor A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less ... | 04/29/2008 |
| 7364978 | Method of fabricating semiconductor device There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substr... | 04/29/2008 |
| 7348186 | Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film and a hydrogen ion implantation condition used in making the SiGe fil... | 03/25/2008 |
| 7329923 | High-performance CMOS devices on hybrid crystal oriented substrates An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is... | 02/12/2008 |
| 7304332 | Compound semiconductor epitaxial substrate and method for manufacturing same A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure which comprises an InGaAs layer as a channel layer 9 and an InGaP layer containing n-type impurities as a front side electron supplyin... | 12/04/2007 |
| 7285495 | Methods for thermally treating a semiconductor layer A method for thermally treating a semiconductor layer is described. An embodiment of the technique includes implanting atomic species into a first surface of a donor wafer to form a zone of weakness at a predetermined depth that defines the thickness of a transfer l... | 10/23/2007 |
| 7282449 | Thermal treatment of a semiconductor layer A method for thermally treating a silicon germanium semiconductor layer from a donor wafer is described. An embodiment of the technique includes co-implanting atomic species into a first surface of the donor wafer to form a zone of weakness at a predetermined depth ... | 10/16/2007 |
| 7279400 | Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon l... | 10/09/2007 |
| 7276431 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 10/02/2007 |
| 7276428 | Methods for forming a semiconductor structure Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species ... | 10/02/2007 |
| 7273800 | Hetero-integrated strained silicon n- and p-MOSFETs The present invention provides semiconductor structures and a method of fabricating such structures for application of MOSFET devices. The semiconductor structures are fabricated in such a way so that the layer structure in the regions of the wafer where n-MOSFETs a... | 09/25/2007 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7268065 | Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se... | 09/11/2007 |
| 7265030 | Method of fabricating silicon on glass via layer transfer A method of fabricating a silicon-on-glass layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; relaxing the SiGe layer; depositing a layer of silicon on the relaxed SiGe layer; implanting hydrogen ions in a second hydrogen implantati... | 09/04/2007 |
| 7262428 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 08/28/2007 |
| 7241647 | Graded semiconductor layer A process for forming a semiconductor device. The process includes forming a template layer for forming a layer of strained silicon. In one example a layer of graded silicon germanium is formed where the germanium is at a higher concentration at the lower portion an... | 07/10/2007 |
| 7241670 | Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions ... | 07/10/2007 |
| 7217949 | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) A semiconductor structure for use as a template for forming high-performance metal oxide semiconductor field effect transistor (MOSFET) devices is provided. More specifically, the present invention provides a structure that includes a SiGe-on-insulator substrate inc... | 05/15/2007 |
| 7198974 | Micro-mechanically strained semiconductor film One aspect of the present subject matter relates to a method for forming strained semiconductor film. In various embodiments, a single crystalline semiconductor film is formed on a substrate surface, and a recess is created beneath the film. A portion of the film is... | 04/03/2007 |
| 7186626 | Method for controlling dislocation positions in silicon germanium buffer layers A method for controlling dislocation position in a silicon germanium buffer layer located on a substrate includes depositing a strained silicon germanium layer on the substrate and irradiating one or more regions of the silicon germanium layer with a dislocation ind... | 03/06/2007 |
| 7176540 | Method for producing micromechanical structures and a micromechanical structure A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface bar... | 02/13/2007 |
| 7172933 | Recessed polysilicon gate structure for a strained silicon MOSFET device A method of forming a channel region for a MOSFET device in a strained silicon layer via employment of adjacent and surrounding silicon-germanium shapes, has been developed. The method features simultaneous formation of recesses in a top portion of a conductive gate... | 02/06/2007 |
| 7157355 | Method of making a semiconductor device having a strained semiconductor layer An implant is performed in the P channel regions, while masking the N channel regions, to deeply amorphize a layer at the surface of a semiconductor layer. After this amphorization step, germanium is implanted into the amorphized layer. The germanium is implanted to... | 01/02/2007 |
| 7153753 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 12/26/2006 |
| 7129126 | Method and structure for forming strained Si for CMOS devices A method for manufacturing a device including an n-type device and a p-type device. In an aspect of the invention, the method involves doping a portion of a semiconductor substrate and forming a gap in the semiconductor substrate by removing at least a portion of th... | 10/31/2006 |
| 7115480 | Micromechanical strained semiconductor by wafer bonding One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first semiconductor wafer such that the surface of the first semiconductor wafer h... | 10/03/2006 |
| 7109100 | Semiconductor device and method for manufacturing semiconductor device To provide a semiconductor device able to be made uniform in diffusion depth of the impurity in a diffusion layer by a single diffusion and to give the desired threshold voltage and improved in yield and a method of producing the same. The device has a channel layer... | 09/19/2006 |
