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| Number | Title | Issue Date |
| 8097529 | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrat... | 01/17/2012 |
| 7994031 | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions A method of manufacturing a semiconductor device is further described, comprising the steps of providing a supply of dopant atoms or molecules into an ionization chamber, combining the dopant atoms or molecules into clusters containing a plurality of dopant atoms, i... | 08/09/2011 |
| 7947582 | Material infusion in a trap layer structure using gas cluster ion beam processing A method of preparing a floating trap type device on a substrate is described. The method comprises forming a trap layer structure on a substrate, and modifying a composition of one or more layers in the trap layer structure by exposing the trap layer structure to a... | 05/24/2011 |
| 7919402 | Cluster ion implantation for defect engineering A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and ... | 04/05/2011 |
| 7732309 | Plasma immersed ion implantation process Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing... | 06/08/2010 |
| 7723219 | Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctu... | 05/25/2010 |
| 7442631 | Doping method and method of manufacturing field effect transistor A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound ... | 10/28/2008 |
| 7410890 | Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams. ... | 08/12/2008 |
| 7405111 | Methods for manufacturing an active matrix display device The present invention is to carry out stable doping and to prevent the drastic pressure change in a treatment chamber by reducing degasification of resist during adding impurities. In the present invention, the stability of the impurity ion injection can be ensured ... | 07/29/2008 |
| 7397048 | Technique for boron implantation A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coup... | 07/08/2008 |
| 7396745 | Formation of ultra-shallow junctions by gas-cluster ion irradiation Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams. ... | 07/08/2008 |
| 7396746 | Methods for stable and repeatable ion implantation A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from th... | 07/08/2008 |
| 7393765 | Low temperature CVD process with selected stress of the CVD layer on CMOS devices Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of... | 07/01/2008 |
| RE40138 | Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner deposition A process for fabricating input/output, N channel, (I/O NMOS) devices, featuring an ion implanted nitrogen region, used to reduce hot carrier electron, (HEC), injection, has been developed. The process features implanting a nitorgen region, at the interface of an ov... | 03/04/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking... | 11/06/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7276431 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 10/02/2007 |
| 7268065 | Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se... | 09/11/2007 |
| 7259036 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduc... | 08/21/2007 |
| 7250727 | High power, long focus electron source for beam processing Beam processing methods including e-beam welding and e-beam evaporation for thin film deposition are implemented with a novel high power, long focus electron source. The high power, long focus electron source generates an e-beam. The e-beam is transported through a ... | 07/31/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7241667 | Method of separating layers of material A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on ... | 07/10/2007 |
| 7235461 | Method for bonding semiconductor structures together A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydro... | 06/26/2007 |
| 7223676 | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silic... | 05/29/2007 |
| 7205552 | Monatomic boron ion source and method Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the p... | 04/17/2007 |
| 7202141 | Method of separating layers of material A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on ... | 04/10/2007 |
| 7199028 | Method for manufacturing semiconductor device Provided is a method for manufacturing a semiconductor device capable of preventing a solution from penetrating a lower layer by forming a poly silicon layer stacked of the films having the different grain boundary structures at border, wherein the solution is used ... | 04/03/2007 |
| 7186631 | Method for manufacturing a semiconductor device Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon;... | 03/06/2007 |
| 7183177 | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of... | 02/27/2007 |
| 7176108 | Method of detaching a thin film at moderate temperature after co-implantation A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone leading to the det... | 02/13/2007 |
| 7166524 | Method for ion implanting insulator material to reduce dielectric constant An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielec... | 01/23/2007 |
| 7163826 | Method of fabricating multi layer devices on buried oxide layer substrates A method for fabricating multi layer devices on a substrate with a buried oxide layer is disclosed. Multi layer microelectromechanical, microfluidic, and integrated circuit devices are fabricated on a substrate with layers of predetermined weak and strong bond regio... | 01/16/2007 |
