Class 438/513 - Plasma (e.g., glow discharge, etc.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process involving the use of a gaseous vapor of ions in
No. of patents: 267
Last issue date: 05/22/2012

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Number	Title	Issue Date
8183136	Method of forming insulating layer and method of manufacturing transistor using the same Provided are a method of forming an insulating layer and a method of manufacturing a transistor using the method. The method of forming the insulating layer includes forming a preliminary insulating layer including silicon oxide (SiO2) on a silicon (Si)-c...	05/22/2012
8138071	Isotopically-enriched boron-containing compounds, and methods of making and using same An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentrat...	03/20/2012
8129261	Conformal doping in P3I chamber Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surf...	03/06/2012
8124507	Semiconductor device and method for fabricating the same A fin-type semiconductor region (103) is formed on a substrate (101), and then a resist pattern (105) is formed on the substrate (101). An impurity is implanted into the fin-type semiconductor region (103) by a plasma doping proces...	02/28/2012
8105926	Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resis...	01/31/2012
8105925	Method for forming an insulated gate field effect device An improved insulated gate field effect device (60) is obtained by providing a substrate (20) desirably comprising a III-V semiconductor, having a further semiconductor layer (22) on the substrate (20) adapted to contain the channel (2...	01/31/2012
8101510	Plasma processing apparatus A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, an...	01/24/2012
8062965	Isotopically-enriched boron-containing compounds, and methods of making and using same An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentrat...	11/22/2011
8062964	Solar cell defect passivation method The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects ...	11/22/2011
8048787	Methods of forming semiconductor devices Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reactin...	11/01/2011
8012862	Method for manufacturing semiconductor device using plasma doping A fin-shaped semiconductor region is formed on a substrate, and then the substrate is placed in a chamber. Then, an ignition gas is introduced into a chamber to thereby turn the ignition gas into a plasma, and then a process gas containing an impurity is introduced ...	09/06/2011
8003500	Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to inc...	08/23/2011
8003501	Method of doping P-type impurity ions in dual poly gate and method of forming dual poly gate using the same A method of doping p-type impurity ions in a dual poly gate, comprising: forming a polysilicon layer doped with n-type impurity ions on a substrate with a gate insulation layer being interposed between the polysilicon layer and the substrate; exposing a region of th...	08/23/2011
7981779	Method for making junction and processed material formed using the same An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an elect...	07/19/2011
7972944	Process simulation method, semiconductor device manufacturing method, and process simulator A process simulation method includes: converting condition data of plasma doping for introducing an impurity into a semiconductor in a plasma atmosphere to corresponding condition data of ion implantation for implanting impurities as an ion beam into the semiconduct...	07/05/2011
7972945	Plasma doping apparatus and method, and method for manufacturing semiconductor device A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a ...	07/05/2011
7951695	Method for reducing plasma discharge damage during processing A semiconductor process and apparatus to provide a way to reduce plasma-induced damage by applying a patterned layer of photoresist (114) which includes resist openings formed (117) over the active circuit areas (13, 14) as well as additional re...	05/31/2011
7943495	Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device. The method includes forming an oxide-nitride-oxide (ONO) layer over a semiconductor substrate, and forming a recess over the semiconductor substrate by etching the ONO layer, forming a vertical structure...	05/17/2011
7939438	Method of inhibiting background plating Methods of inhibiting background plating on semiconductor substrates using oxidizing agents are disclosed. ...	05/10/2011
7927986	Ion implantation with heavy halogenide compounds A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragme...	04/19/2011
7863168	Plasma doping method and plasma doping apparatus In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is he...	01/04/2011
7838400	Rapid thermal oxide passivated solar cell with improved junction A method of manufacturing a solar cell is provided. One surface of a semiconductor substrate is doped with a n-type dopant. The substrate is then subjected to a thermal oxidation process to form an oxide layer on one or both surfaces of the substrate. The thermal pr...	11/23/2010
7838399	Plasma immersed ion implantation process using balanced etch-deposition process Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture ...	11/23/2010
7833887	Notched-base spacer profile for non-planar transistors A method of forming a notched-base spacer profile for non-planar transistors includes providing a semiconductor fin having a channel region on a substrate and forming a gate electrode adjacent to sidewalls of the channel region and on a top surface of the channel re...	11/16/2010
7825014	Method for fabricating semiconductor device A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source ga...	11/02/2010
7820533	Multi-step plasma doping with improved dose control A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition im...	10/26/2010
7811912	Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes the steps of forming a first insulation layer on a substrate; forming a damascene pattern in the first insulation layer; conducting a first process for forming metal lines in the damascene pattern; conductin...	10/12/2010
7790586	Plasma doping method An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced ...	09/07/2010
7741199	Method for introducing impurities and apparatus for introducing impurities A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus u...	06/22/2010
7737010	Method of photoresist strip for plasma doping process of semiconductor manufacturing A method of forming an intermediate semiconductor device is disclosed that comprises providing a semiconductor substrate, forming a photoresist layer on the semiconductor substrate, implanting a dopant into the semiconductor substrate, and removing a dopant-containi...	06/15/2010
7709362	Method for introducing impurities and apparatus for introducing impurities A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus u...	05/04/2010
7700465	Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the ch...	04/20/2010
7696072	Method for introduction impurities and apparatus for introducing impurities A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus u...	04/13/2010
7666771	System and method for the manufacture of semiconductor devices by the implantation of carbon clusters A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrat...	02/23/2010
7666770	Method of controlling impurity doping and impurity doping apparatus A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions ...	02/23/2010
7642180	Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform...	01/05/2010
7605063	Photoresist stripping chamber and methods of etching photoresist on substrates Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to ...	10/20/2009
7601619	Method and apparatus for plasma processing A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a ga...	10/13/2009
7575987	Method of plasma doping A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plas...	08/18/2009
7531434	Method of fabricating semiconductor devices A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication o...	05/12/2009

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Class 438/513 - Plasma (e.g., glow discharge, etc.)