Class 438/512 - Involving nuclear transmutation doping

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for introducing a dopant into semiconductor regions
No. of patents: 37
Last issue date: 12/27/2011

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Number	Title	Issue Date
8084339	Remote plasma processing of interface surfaces Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a ...	12/27/2011
7915152	III-V nitride substrate boule and method of making and using the same A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a trans...	03/29/2011
7795120	Doping wide band gap semiconductors A 13C diamond is doped by proton induced transmutation. P-type doping is achieved by the 13C(p,αγ)10B reaction. N-type doping is achieved by the 13C(p,γ)14N reaction. The transmutation reaction that occurs is...	09/14/2010
7316934	Personalized hardware A system for personalizing one or more electrical circuits having plurality of layers with electrical characteristics. The layers being produced by an electrical characteristic determination process (ECDP). The system for personalizing includes a wafer stage for rec...	01/08/2008
7288830	III-V nitride semiconductor substrate and its production method A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm is produced by growing a III-V nitride semiconductor crystal while f...	10/30/2007
7276431	Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does...	10/02/2007
7268065	Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se...	09/11/2007
6964917	Semi-insulating silicon carbide produced by Neutron transmutation doping A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutro...	11/15/2005
6913982	Method of fabricating a probe of a scanning probe microscope (SPM) having a field-effect transistor channel A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM probe having a source, channel, and drain is formed by etching a single crystalline sil...	07/05/2005
6703292	Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Semiconductor devices are known comprising a multiple p-n junction RESURF semiconductor material (10) that provides a voltage-sustaining space-charge zone when depleted from a blocking junction (40). Charge balance is important in the alternating p-type (...	03/09/2004
6635956	Semiconductor device, semiconductor module and hard disk A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to the heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting memb...	10/21/2003
6576511	Method for forming nitride read only memory A semiconductor substrate having a source/drain region is initially provided, wherein a channel is formed in the space between the source/drain region within the semiconductor substrate. Then the oxide-nitride-oxide layers are formed on the semiconductor ...	06/10/2003
6465333	Method of manufacturing a circuit When the temperature of a silicon substrate is increased, a first annealing gas which is mainly composed of argon or the like that does not react with said silicon substrate with a trace of oxygen added thereto, is supplied to the position of the silicon ...	10/15/2002
6403454	Silicon semiconductor devices with δ-doped layers We have discovered that, contrary to conventional wisdom about forming DP defects, electrical saturation in highly doped 2D layers of Si does not occur. In accordance with one aspect of our invention, free-carrier concentrations in excess of about 7×10	06/11/2002
6251755	High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the pr...	06/26/2001
6114225	Local penetrating proton beam transmutation doping method for silicon Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of protons is described. A key feature of the invention is that the protons are required to have an energy of at least 4 MeV to overcome the Coulomb barrier, the...	09/05/2000
6100168	Location selective transmutation doping on silicon wafers using high energy deuterons Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of deuterons is described. A key feature of the invention is that the deuterons are required to have an energy of at least 4 MeV, to overcome the Coulomb barrier...	08/08/2000
6027953	Lateral PN arrayed digital X-ray image sensor An X-ray imaging array is described together with a method for its manufacture. The array is defined by a set of PN junctions in a silicon wafer that extend all the way through between the two surfaces of the wafer. The PN junctions are formed using neutr...	02/22/2000
6001715	Non-thermal process for annealing crystalline materials Bulk crystalline materials are annealed by introducing into them mechanical energy of sufficient intensity to create a large amplitude sound wave. The mechanical energy may be introduced into the material, for example, by laser ablation. Where the bulk cr...	12/14/1999
4910156	Neutron transmutation doping of a silicon wafer A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si30 contained in said single silicon crystals made by the CZ method or the M...	03/20/1990
4836788	Production of solid-state image pick-up device with uniform distribution of dopants A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silic...	06/06/1989
4806497	Method for producing large-area power semiconductor components A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, γor proton irradiation) are used to produce the basic doping, to introduce deep pn junctions and...	02/21/1989
4728371	Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si30 (n,γ) Si31 ଲ- P31 includes the steps of covering the sil...	03/01/1988
4639276	Method of making thyristor with a high tolerable bias voltage A thyristor having a high tolerable voltage VBo comprising a first emitter layer (3), a first base layer (1), a second base layer (2), a second emitter layer (4) covering the surface except for a gate region (5) of the second emitter layer, sai...	01/27/1987
4526624	Enhanced adhesion of films to semiconductors or metals by high energy bombardment Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process resul...	07/02/1985
4479829	Method for making high resistance chromium-free semiconductor substrate body with low resistance active semiconductor layer by surface irradiation A high resistance semiconductor substrate body with a thin low resistance active semiconductor layer thereon is generated by a method including the steps of subjecting the semiconductor substrate body to neutron bombardment to a degree which produces high...	10/30/1984
4469527	Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then rendering only the surface of the thus irradiated substrat...	09/04/1984
4240844	Reducing the switching time of semiconductor devices by neutron irradiation The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 Mev. to a dosage between 1×1011 and 1×1...	12/23/1980
4135951	Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials Semiconductor materials which have been doped by neutron transmutation require annealing at high temperatures in order to alleviate radiation damage and to restore electrical resistivity; however, the minority carrier lifetime is reduced significantly thr...	01/23/1979
4129463	Polycrystalline silicon semiconducting material by nuclear transmutation doping A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries....	12/12/1978
4119441	Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the crystal. A silicon single crystal is exposed to a pattern of ra...	10/10/1978
4042454	Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation Si monocrystals of the n-type are produced by zone melting polycrystalline Si rods under conditions sufficient to produce monocrystal rods, measuring the specific conductivity of such monocrystal rods and subjecting such monocrystal rods to a controlled r...	08/16/1977
4027051	Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation Homogeneously doped Si monocrystals of the n-type are produced from p- or n-type Si crystals having a random dopant concentration in radial and axial directions of the crystal and the dopant concentration within such crystals is adjusted by subjecting suc...	05/31/1977
4025365	Method of producing homogeneously doped p-conductive semiconductor materials A homogeneously doped p-conductive semiconductor material is produced by irradiating a desired semiconductor material with γ-photons which trigger nuclear reactions within such irradiated material to form dopant atoms therein....	05/24/1977
4000505	Thin oxide MOS solar cells A semiconductor device comprising a first layer of semiconductor material ving a bulk region of p-type conductivity and an inversion surface of n-type conductivity which forms a p-n junction with said bulk region, a covering layer on said inversion surfac...	12/28/1976
3971057	Lateral photodetector of improved sensitivity A lateral photodetector of improved sensitivity and method of making the e. The photodetector consists of semiconductive wafer, having a transparent layer of metal deposited on its front face to form a Schottky barrier. A negative bias is applied to the ...	07/20/1976
3967982	Method of doping a semiconductor layer A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear reaction into doping material atoms....	07/06/1976

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Class 438/512 - Involving nuclear transmutation doping