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| Number | Title | Issue Date |
| 8110486 | Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of... | 02/07/2012 |
| 8093144 | Patterning of nanostructures A technique for forming nanostructures including a definition of a charge pattern on a substrate and introduction of charged molecular scale sized building blocks (MSSBBs) to a region proximate the charge pattern so that the MSSBBs adhere to the charge pattern to fo... | 01/10/2012 |
| 8017509 | Growth of monocrystalline GeN on a substrate The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° ... | 09/13/2011 |
| 7977221 | Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same A strained Si—SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layer 14 on an SOI substrate 10 having an Si layer 13 and a buried oxide film 12; formi... | 07/12/2011 |
| 7968438 | Ultra-thin high-quality germanium on silicon by low-temperature epitaxy and insulator-capped annealing Exemplary embodiments provide semiconductor devices with a high-quality semiconductor material on a lattice mismatched substrate and methods for their manufacturing using low temperature growth techniques followed by an insulator-capped annealing process. The semico... | 06/28/2011 |
| 7964483 | Growth method for nitride semiconductor epitaxial layers The present invention relates to a method for growing a nitride semiconductor epitaxial layer, which comprises the steps of growing a second nitride semiconductor epitaxial layer on a first nitride semiconductor epitaxial layer at a first temperature, growing a thir... | 06/21/2011 |
| 7947581 | Formation of graphene wafers on silicon substrates Processes for forming full graphene wafers on silicon or silicon-on-insulator substrates. The processes comprise formation of a metal carbide layer on the substrate and annealing of the metal carbide layer under high vacuum. For volatile metals, this annealing step ... | 05/24/2011 |
| 7642179 | Semiconductor substrate and manufacturing method for the same A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline s... | 01/05/2010 |
| 7528057 | Laser annealing method and laser annealing device A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and seco... | 05/05/2009 |
| 7407869 | Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined b... | 08/05/2008 |
| 7402505 | Single electron devices formed by laser thermal annealing A semiconductor device with a superlattice and method of making same includes forming a layer of amorphous silicon over a substrate, and forming a layer of nanocrystals by laser thermal annealing the layer of amorphous silicon. A gate dielectric is formed between th... | 07/22/2008 |
| 7358162 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temp... | 04/15/2008 |
| 7358166 | Relaxed, low-defect SGOI for strained Si CMOS applications Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer... | 04/15/2008 |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7344898 | Method for manufacturing semiconductor device After a bottom electrode film is formed, a ferroelectric film is formed on the bottom electrode film. Then, a heat treatment is performed for the ferroelectric film in an oxidizing atmosphere so as to crystallize the ferroelectric film. Then, a top electrode film is... | 03/18/2008 |
| 7338815 | Semiconductor device manufacturing method A semiconductor device manufacturing method, includes a step of forming refractory metal silicide layers 13a to 13c in a partial area of a semiconductor substrate 10, a step of forming an interlayer insulating film 21 on the... | 03/04/2008 |
| 7332417 | Semiconductor structures with structural homogeneity Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free. ... | 02/19/2008 |
| 7329593 | Germanium deposition A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing th... | 02/12/2008 |
| 7326587 | Semiconductor memory device having capacitor and method of forming the same A semiconductor memory device having a capacitor is disclosed. The capacitor includes a bottom capacitor surface formed of a silicon-germanium crystalline layer or a dual layer in which a silicon-germanium crystalline layer covers a silicon crystalline layer. The bo... | 02/05/2008 |
| 7319530 | System and method for measuring germanium concentration for manufacturing control of BiCMOS films A system and method is disclosed for measuring a germanium concentration in a semiconductor wafer for manufacturing control of BiCMOS films. Germanium is deposited over a silicon substrate layer to form a silicon germanium film. Then a rapid thermal oxidation (RTO) ... | 01/15/2008 |
| 7316969 | Method and apparatus for thermally treating substrates The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents an apparatus and method for thermally treating substrates, wherein the... | 01/08/2008 |
| 7312480 | Semiconductor device and method of fabricating the same A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity c... | 12/25/2007 |
| 7291516 | Low temperature melt-processing of organic-inorganic hybrid The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of... | 11/06/2007 |
| 7288332 | Conductive layer for biaxially oriented semiconductor film growth A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film ... | 10/30/2007 |
| 7282425 | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The... | 10/16/2007 |
| 7282384 | Thermoelectric transducing material thin film, sensor device, and its manufacturing method The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member ... | 10/16/2007 |
| 7271404 | Group III-V nitride-based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impu... | 09/18/2007 |
| 7259397 | Self-scanning light-emitting element array chip Provided is a self-scanning light-emitting element array chip structured on a substrate using Si. A lattice mismatching buffer layer (32) is formed on a Si substrate (30). On the lattice mismatching buffer layer (32), successively stacked are an... | 08/21/2007 |
| 7259094 | Apparatus and method for heat treating thin film An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater whic... | 08/21/2007 |
| 7258739 | Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on the surface layer portion of the wafer. Thereby, the concentration of g... | 08/21/2007 |
| 7256110 | Crystal manufacturing method A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming ... | 08/14/2007 |
| 7256082 | Production method for semiconductor device A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film, silicon nitride film or silicon oxide nitride film or the like on a sil... | 08/14/2007 |
| 7253081 | Surface finishing of SOI substrates using an EPI process A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribu... | 08/07/2007 |
| 7247357 | Image display device The image display device has a display section formed of plural pixels and a control section which controls the display section, and is provided with nonvolatile phase-change type pixel memories in respective ones of the pixels, or is provided with a nonvolatile pha... | 07/24/2007 |
| 7244668 | Methods of manufacturing semiconductor devices Methods for manufacturing semiconductor devices are disclosed. In one example, the semiconductor device has a gate and source/drain regions formed on a substrate. One example method includes introducing transition metal (Ti) source or precursor so that the introduce... | 07/17/2007 |
| 7238595 | Epitaxial semiconductor deposition methods and structures Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-f... | 07/03/2007 |
| 7238560 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may f... | 07/03/2007 |
| 7232716 | Display device and method for manufacturing the same The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum va... | 06/19/2007 |
| 7209857 | Method of evaluating shape of semiconductor wafer and apparatus for evaluating shape of semiconductor wafer The present invention is a method of evaluating a shape of a semiconductor wafer comprising the steps of: measuring shape data of a semiconductor wafer by scanning a front surface and/or a back surface of the semiconductor wafer; calculating a differential profile t... | 04/24/2007 |
| 7202145 | Strained Si formed by anneal A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium layer. The silicon-germanium layer may include a thickness of 500 angs... | 04/10/2007 |
