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| Number | Title | Issue Date |
| 7977220 | Substrates for silicon solar cells and methods of producing the same Aspects of the invention include methods for depositing silicon on a substrate. In certain embodiments, the methods include exposing a substrate containing silicon to a halogenated silane in a manner sufficient to deposit the silicon on the substrate. In certain emb... | 07/12/2011 |
| 7951694 | Semiconductor structure and method of manufacture of same A method of manufacturing a nitride semiconductor structure includes disposing a semiconductor substrate in a molecular beam epitaxy reactor; growing a wetting layer comprising AlxInyGa(1−(x+y))As(0≦x+y≦1) or AlxIn | 05/31/2011 |
| 7939436 | Method of fabricating a semiconductor device A method of fabricating a semiconductor device forms a micro-sized gate, and mitigates short channel effects. The method includes a pull-back process to form the gate on a substrate. The method also includes forming inner and outer spacers on the gate that are asymm... | 05/10/2011 |
| 7939437 | Metallization method for solar cells A method for the production of a contact structure of a solar cell allows p-contacts and n-contacts to be produced simultaneously. ... | 05/10/2011 |
| 7678673 | Strengthening of a structure by infiltration The present invention provides a method of strengthening a structure, to heal the imperfection of the structure, to reinforce the structure, and thus strengthening the dielectric without compromising the desirable low dielectric constant of the structure. The invent... | 03/16/2010 |
| 7674694 | Process for manufacturing a TFT device with source and drain regions having gradual dopant profile A process for realizing TFT devices on a substrate comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer pro... | 03/09/2010 |
| 7335266 | Method of forming a controlled and uniform lightly phosphorous doped silicon film Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas ha... | 02/26/2008 |
| 7326953 | Layer sequence for Gunn diode The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped nd GaAs layer (3), a graded AlGaAs layer (5), which is placed upon the first h... | 02/05/2008 |
| 7285794 | Quantum semiconductor device and method for fabricating the same The quantum semiconductor device comprises a first semiconductor layer 18 on a substrate 10 with a two-dimensional carrier gas formed in; a quantum dot 20 formed on the first semiconductor layer 18; a second semiconductor layer 22 ... | 10/23/2007 |
| 7279699 | Integrated circuit comprising a waveguide having an energy band engineered superlattice An integrated circuit may include at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stac... | 10/09/2007 |
| 7262117 | Germanium integrated CMOS wafer and method for manufacturing the same The present invention discloses an integration flow of germanium into a conventional CMOS process, with improvements in performing selective area growth, and implementing electrical contacts to the germanium, in a way that has minimal impact on the preexisting trans... | 08/28/2007 |
| 7247812 | Laser annealing apparatus An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas divers... | 07/24/2007 |
| 7226504 | Method to form thick relaxed SiGe layer with trench structure A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium ... | 06/05/2007 |
| 7226833 | Semiconductor device structure and method therefor Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and an overlying layer of the other crystal orientation. The underlying l... | 06/05/2007 |
| 7109087 | Absorber layer for DSA processing A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, ... | 09/19/2006 |
| 7094670 | Plasma immersion ion implantation process A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersi... | 08/22/2006 |
| 7084051 | Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device A purpose of the invention is to provide a manufacturing method for a semiconductor substrate in which a high quality strained silicon channel can easily be formed without sacrificing the processing efficiency of a wafer and to provide a manufacturing method for a s... | 08/01/2006 |
| 7056755 | P-type nitride semiconductor and method of manufacturing the same A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources o... | 06/06/2006 |
| 7033921 | Method and device for depositing crystalline layers on crystalline substrates The invention relates to a method and device for depositing several crystalline semiconductor layers on at least one semiconductor crystalline substrate. According to said method, gaseous parent substances are introduced into a process chamber of a reactor by means ... | 04/25/2006 |
| 7026219 | Integration of high k gate dielectric Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-... | 04/11/2006 |
| 7015511 | Gallium nitride-based light emitting device and method for manufacturing the same For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of th... | 03/21/2006 |
| 6982214 | Method of forming a controlled and uniform lightly phosphorous doped silicon film Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas ha... | 01/03/2006 |
| 6953729 | Heterojunction field effect transistor and manufacturing method thereof In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain areas, conventionally, the N-type carrier supply layer and the N-typ... | 10/11/2005 |
| 6953740 | Highly doped III-nitride semiconductors A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by firs... | 10/11/2005 |
| 6936526 | Method of disordering quantum well heterostructures A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructu... | 08/30/2005 |
| 6927140 | Method for fabricating a bipolar transistor base A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentrat... | 08/09/2005 |
| 6861340 | Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes. ... | 03/01/2005 |
| 6797595 | Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes. ... | 09/28/2004 |
| 6746941 | Semiconductor wafer and production method therefor It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter. When a process gas is supplie... | 06/08/2004 |
| 6743702 | Nitride-based semiconductor laser device and method of forming the same A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor ... | 06/01/2004 |
| 6723622 | Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber while simultaneously decreasing a deposition temperature and decreasing... | 04/20/2004 |
| 6673702 | Method for producing a semiconductor device A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made o... | 01/06/2004 |
| 6524976 | Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.... | 02/25/2003 |
| 6518082 | Method for fabricating nitride semiconductor device First, the substrate temperature is set to 1020° C., and an n-type cladding layer (14) made of n-type Al0.1 Ga0.9 N, an n-type optical guide layer (15) made of n-type GaN, and a flatness maintenance layer (16) made of n-type Al... | 02/11/2003 |
| 6444547 | Method for manufacturing semiconductor device The present invention is characterized by providing epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing impurities having different conductivity type in the epitaxiall... | 09/03/2002 |
| 6429102 | Method of manufacturing low resistivity p-type compound semiconductor material The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on ... | 08/06/2002 |
| 6391799 | Process for fabricating a structure of semiconductor-on-insulator type in particular SiCOI A process for fabricating a structure including a carrier substrate and a layer of semiconductor material on one surface of the carrier substrate. The process a) forms a layer of semiconductor material on one surface of a first substrate, b) forms a cleav... | 05/21/2002 |
| 6387779 | Method of crystallizing a silicon film and thin film transistor and fabricating method thereof using the same The present invention relates to a method of crystallizing a silicon film, a thin film transistor, and a fabricating method thereof using the same. More particularly, the present invention relates forming a crystalline silicon film by crystallizing a sili... | 05/14/2002 |
| 6387769 | Method of producing a schottky varicap A method of producing a Schottky varicap (25) including: (a) providing an epitaxial layer (12) on a semiconductor substrate (1); (b) providing an insulating layer including an oxide layer and a nitride layer on a predetermined area of the surface of the epitaxial l... | 05/14/2002 |
| 6337239 | Layer configuration with a material layer and a diffusion barrier which blocks diffusing material components and process for producing a diffusion barrier A layer configuration includes a material layer and a diffusion barrier which blocks diffusing material components. The barrier is disposed in the vicinity of a layer boundary of the material layer and is formed predominantly in grain boundaries of the ma... | 01/08/2002 |
