Quotables
"Fooling around with alternating current is just a waste of time. Nobody will use it, ever."
Thomas Edison ; 1889
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8133803 | Method for fabricating semiconductor substrates and semiconductor devices A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign ... | 03/13/2012 |
| 8048786 | Method for fabricating single-crystalline substrate containing gallium nitride The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containin... | 11/01/2011 |
| 8043945 | Method of fabricating semiconductor device A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member compris... | 10/25/2011 |
| 8008174 | Continuous feed chemical vapor deposition Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided w... | 08/30/2011 |
| 7989327 | Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched step A method of manufacturing a semi-conductor on insulator substrate from an SOI substrate, wherein a Si1-xGex layer is formed on a superficial layer of silicon having a buried electrical insulating layer. A silicon oxide layer is formed on the Si... | 08/02/2011 |
| 7935617 | Method to stabilize carbon in SiGeClayers A method of providing a layer in a semiconductor device, wherein the layer includes Si1-x-yGexCy, and wherein the carbon in the layer is in a stable condition, includes preparing a silicon substrate; preparing a SiGeC precursor; form... | 05/03/2011 |
| 7927985 | Method of manufacturing semiconductor devices A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division lines are partially etched by dry etching to form grooves in a lattic... | 04/19/2011 |
| 7883998 | Vapor phase growth method It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing a... | 02/08/2011 |
| 7863167 | Method of manufacturing group III nitride crystal Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, ont... | 01/04/2011 |
| 7838398 | Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer In a method for producing epitaxially coated semiconductor wafers, a multiplicity of prepared, front side-polished semiconductor wafers are successively coated individually with an epitaxial layer on their polished front sides at temperatures of 800-1200° C. in a r... | 11/23/2010 |
| 7790584 | Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single... | 09/07/2010 |
| 7589003 | GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precurs... | 09/15/2009 |
| 7427556 | Method to planarize and reduce defect density of silicon germanium A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposi... | 09/23/2008 |
| 7413967 | Yield improvement in silicon-germanium epitaxial growth A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are fo... | 08/19/2008 |
| 7378331 | Methods of vertically stacking wafers using porous silicon A method and article to provide a three-dimensional (3-D) IC wafer process flow. In some embodiments, the method and article include bonding a device layer of a multilayer wafer to a device layer of another multilayer wafer to form a bonded pair of device layers, ea... | 05/27/2008 |
| 7371666 | Process for producing luminescent silicon nanoparticles A process for producing brightly photoluminescent silicon nanoparticles with an emission spanning the visible spectrum is disclosed. In one aspect, the process involves reacting a silicon precursor in the presence of a sheath gas with heat from a radiation beam unde... | 05/13/2008 |
| 7368369 | Method for activating P-type semiconductor layer A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprise... | 05/06/2008 |
| 7365410 | Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous... | 04/29/2008 |
| 7364714 | 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thi... | 04/29/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7361563 | Methods of fabricating a semiconductor device using a selective epitaxial growth technique Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are... | 04/22/2008 |
| 7352008 | Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma... | 04/01/2008 |
| 7341175 | Bonding of light emitting diodes having shaped substrates Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do... | 03/11/2008 |
| 7335266 | Method of forming a controlled and uniform lightly phosphorous doped silicon film Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas ha... | 02/26/2008 |
| 7332795 | Dielectric passivation for semiconductor devices A semiconductor device is disclosed that includes a layer of Group III nitride semiconductor material that includes at least one surface, a control contact on the surface for controlling the electrical response of the semiconductor material, a dielectric barrier lay... | 02/19/2008 |
| 7329593 | Germanium deposition A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing th... | 02/12/2008 |
| 7316933 | Method for producing an annular microstructure element An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched... | 01/08/2008 |
| 7309660 | Buffer layer for selective SiGe growth for uniform nucleation Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are disclosed. ... | 12/18/2007 |
| 7309620 | Use of sacrificial layers in the manufacture of high performance systems on tailored substrates The invention relates to methods for preparing a removable system on a mother substrate. The method deposits a high surface to volume sacrificial layer on a mother substrate and stabilizes the sacrificial layer by a) removing volatile chemical species in and on the ... | 12/18/2007 |
| 7300859 | Atmospheric glow discharge with concurrent coating deposition A plasma is produced in a treatment space (58) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes (54,56) separated by a dielectric material (64), a precursor material is i... | 11/27/2007 |
| 7291544 | Homoepitaxial gallium nitride based photodetector and method of producing A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104... | 11/06/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7279115 | Method to reduce stacking fault nucleation sites and reduce V drift in bipolar devices A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (Vf) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide... | 10/09/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7268051 | Semiconductor on glass insulator with deposited barrier layer Methods and apparatus provide for: a silicon on insulator structure, comprising: a glass substrate; a layer of semiconductor material; and a deposited barrier layer of between about 60 nm to about 600 nm disposed between the glass substrate and the semiconductor mat... | 09/11/2007 |
| 7265388 | Semiconductor device A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of ... | 09/04/2007 |
| 7262466 | Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a seco... | 08/28/2007 |
| 7261826 | Electrostatic actuator for microelectromechanical systems and methods of fabrication A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure t... | 08/28/2007 |
| 7253081 | Surface finishing of SOI substrates using an EPI process A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribu... | 08/07/2007 |
| 7250357 | Manufacturing method for strained silicon wafer A manufacturing method for producing a stained silicon wafer has the steps of forming an Si1-xGex composition-graded layer of which Ge concentration is stepwisely increased on a single crystal silicon substrate, forming an Si1-xGe | 07/31/2007 |
