Famous Patents
3M employee and church chorister Art Fry needed something to temporarily mark pages in his hymnal. He was in luck because his colleague, Spencer Silver, accidentally developed a glue that was too weak for other purposes. After initially discouraging consumer response, Post-it Notes became a hit in 1979.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8088677 | Method of manufacturing semiconductor device, and semiconductor device A method of manufacturing a semiconductor device including implanting an element selected from fluorine and nitrogen, over the entire region of a semiconductor substrate; oxidizing the semiconductor substrate to thereby form a first oxide film over the surface of th... | 01/03/2012 |
| RE43045 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 12/27/2011 |
| 7897495 | Formation of epitaxial layer containing silicon and carbon Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In ... | 03/01/2011 |
| 7772097 | Methods of selectively depositing silicon-containing films An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from t... | 08/10/2010 |
| 7682953 | Method of forming p-type compound semiconductor layer A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen con... | 03/23/2010 |
| 7648895 | Vertical CVD apparatus for forming silicon-germanium film A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply sy... | 01/19/2010 |
| 7642178 | Semiconductor device, method for manufacturing the same and method for evaluating the same A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of f... | 01/05/2010 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7358171 | Method to chemically remove metal impurities from polycide gate sidewalls An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also... | 04/15/2008 |
| 7271467 | Multiple oxide thicknesses for merged memory and logic applications Structures are provided for multiple oxide thicknesses on a single silicon wafer. In particular, structures are provided for multiple gate oxide thicknesses on a single chip. The chip can include circuitry including but not limited to the memory and logic technologi... | 09/18/2007 |
| 7268052 | Method for reducing soft error rates of memory cells In one embodiment, a method of fabricating a transistor for a memory cell includes the steps of performing a counter doping implant before or after a source/drain implant. The counter doping implant may comprise one or more implant steps that move a metallurgical ju... | 09/11/2007 |
| 7256110 | Crystal manufacturing method A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming ... | 08/14/2007 |
| 7208396 | Permanent adherence of the back end of a wafer to an electrical component or sub-assembly A plurality of successive layers are firmly adhered to one another and to a wafer surface and an electrical component or sub-assembly even when the wafer surface is not even and the layers are bent. The wafer surface is initially cleaned by an ion bombardment of an ... | 04/24/2007 |
| 7208338 | Method of manufacturing semiconductor light emitting device A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding... | 04/24/2007 |
| 7198992 | Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 04/03/2007 |
| 7199397 | AMOLED circuit layout In an active matrix organic light emitting diode (AMOLED) display panel having an improved OLED circuit layout in the TFT back panel, the AMOLED pixels in the AMOLED pixel array are arranged to have the TFT circuit portions of the AMOLED pixels in clustered regions ... | 04/03/2007 |
| 7195986 | Microfluidic device with controlled substrate conductivity A method to achieve controlled conductivity in microfluidic devices, and a device formed thereby. The method comprises forming a microchannel or a well in an insulating material, and ion implanting at least one region of the insulating material at or adjacent the mi... | 03/27/2007 |
| 7166523 | Silicon carbide and method of manufacturing the same In a method of manufacturing a silicon carbide substance, such as a film, a layer, a semiconductor, which is doped with an impurity, a carbonization process is executed after formation of a doped silicon substance which is obtained by carrying out a silicon depositi... | 01/23/2007 |
| 7157314 | Vertically stacked field programmable nonvolatile memory and method of fabrication A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus ... | 01/02/2007 |
| 7147718 | Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they rea... | 12/12/2006 |
| 7122449 | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on... | 10/17/2006 |
| 7061021 | System and method for fabricating diodes This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that t... | 06/13/2006 |
| 7045880 | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Improved methods and structures are provided that are lateral to surfaces with a (110) crystal plane orientation such that an electrical current of such structures is conducted in the direction. Advantageously, improvements in hole carrier mobility of approxim... | 05/16/2006 |
| 7033921 | Method and device for depositing crystalline layers on crystalline substrates The invention relates to a method and device for depositing several crystalline semiconductor layers on at least one semiconductor crystalline substrate. According to said method, gaseous parent substances are introduced into a process chamber of a reactor by means ... | 04/25/2006 |
| 7018856 | Calibration standards for dopants/impurities in silicon and preparation method A multi-point calibration standards and a method of fabricating calibration standards which are used to quantify the dose or concentration of a dopant or impurity in a silicon matrix. The calibration standards include a set of calibration standard wafers for each do... | 03/28/2006 |
| 7015511 | Gallium nitride-based light emitting device and method for manufacturing the same For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of th... | 03/21/2006 |
| 6960821 | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Improved methods and structures are provided that are lateral to surfaces with a (110) crystal plane orientation such that an electrical current of such structures is conducted in the direction. Advantageously, improvements in hole carrier mobility of approxim... | 11/01/2005 |
| 6938668 | Manufacturing medical devices by vapor deposition A method of forming a medical device, the method including the steps of providing a substrate, depositing a metallic layer on the substrate by a vapor deposition process, and removing the metallic layer from the substrate. The metallic layer thus removed is the medi... | 09/06/2005 |
| 6921678 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrog... | 07/26/2005 |
| 6887736 | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a d... | 05/03/2005 |
| 6797571 | Method of manufacturing semiconductor device The present invention provides a method of manufacturing a semiconductor device, in which while a conductive layer is formed on an oxide film formed as an insulating layer by using a CVD method, oxygen deficiency of the oxide film can be avoided without any drop in ... | 09/28/2004 |
| 6784002 | Method to make wafer laser marks visable after bumping process A wafer bumping method comprising the following steps of. A wafer having fields is provided. The wafer having at least one wafer identification character formed thereon within one or more of the fields. A dry film resist is formed over the wafer. Portions of the dry... | 08/31/2004 |
| 6746941 | Semiconductor wafer and production method therefor It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter. When a process gas is supplie... | 06/08/2004 |
| 6743702 | Nitride-based semiconductor laser device and method of forming the same A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor ... | 06/01/2004 |
| 6559038 | Method for growing p-n heterojunction-based structures utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 05/06/2003 |
| 6531072 | Phosphor A phosphor in the form of a columnar powder capable of exhibiting enhanced luminous efficiency, providing various luminous colors by electron excitation depending on the selection of elements added thereto and having improved life characteristics. The pho... | 03/11/2003 |
| 6479313 | Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V gr... | 11/12/2002 |
| 6475825 | Process for preparing zinc oxide films containing p-type dopant A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of... | 11/05/2002 |
| 6454854 | Semiconductor wafer and production method therefor It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter. When a process gas is sup... | 09/24/2002 |
| 6379990 | Method of fabricating a micromechanical semiconductor configuration A membrane of the micromechanical semiconductor configuration is formed within a cavity. The membrane is formed by a crystalline layer within the substrate or within an epitaxial sequence of layers of the semiconductor configuration arranged on a substrat... | 04/30/2002 |
