Bizarre Patents
A beach chair which can be adapted for a woman who is pregnant and wishes to sunbathe in the prone position.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8163634 | Devices with graphene layers A method includes an act of providing a crystalline substrate with a diamond-type lattice and an exposed substantially (111)-surface. The method also includes an act of forming a graphene layer or a graphene-like layer on the exposed substantially (111)-surface.... | 04/24/2012 |
| 8133802 | Silicon-germanium hydrides and methods for making and using same The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherei... | 03/13/2012 |
| 8105922 | Method of thin film epitaxial growth using atomic layer deposition A method of thin film epitaxial growth using atomic layer deposition is provided by introducing a first deposition precursor and a second deposition precursor into a chamber after a vent valve connected between the chamber and a vacuum pump is closed. The chamber is... | 01/31/2012 |
| 8076224 | Thin-film deposition and recirculation of a semi-conductor material A process for coating a substrate at atmospheric pressure is disclosed, the process comprising the steps of vaporizing a mass of semiconductor material within a heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature... | 12/13/2011 |
| 8076223 | Method for producing semiconductor substrate The present invention is a method for producing a semiconductor substrate, including steps of forming a SiGe gradient composition layer and a SiGe constant composition layer on a Si single crystal substrate, flattening a surface of the SiGe constant composition laye... | 12/13/2011 |
| 8048785 | Method of fabricating nanosized filamentary carbon devices over a relatively large-area Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need of applying any external voltage source bias. The growth process may b... | 11/01/2011 |
| 8021968 | Susceptor and method for manufacturing silicon epitaxial wafer Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coati... | 09/20/2011 |
| 7985666 | Method of manufacturing silicon nanowires using silicon nanodot thin film Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a n... | 07/26/2011 |
| 7964482 | Deposition of group III-nitrides on Ge The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method co... | 06/21/2011 |
| 7947580 | Hybrid semiconductor structure A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different sem... | 05/24/2011 |
| 7927984 | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas f... | 04/19/2011 |
| 7875536 | Nanostructures formed of branched nanowhiskers and methods of producing the same A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The sec... | 01/25/2011 |
| 7816238 | GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a subs... | 10/19/2010 |
| 7781314 | Nitride semiconductor device manufacturing method Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate... | 08/24/2010 |
| 7745315 | Highly aligned vertical GaN nanowires using submonolayer metal catalysts A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires. | 06/29/2010 |
| 7713851 | Method of manufacturing silicon epitaxial wafer A silicon epitaxial layer 2 is grown in vapor phase on a silicon single crystal substrate 1 manufactured by the Czochralski method, and doped with boron so as to adjust the resistivity to 0.02 Ω·cm or below, oxygen precipitation nuclei 11 are ... | 05/11/2010 |
| 7687382 | Method of making group III nitride-based compound semiconductor A method of making a group III nitride-based compound semiconductor has the steps of: providing a semiconductor substrate with a polished surface, the semiconductor substrate being of group III nitride-based compound semiconductor; and growing a semiconductor epitax... | 03/30/2010 |
| 7662706 | Nanostructures formed of branched nanowhiskers and methods of producing the same A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The sec... | 02/16/2010 |
| 7560366 | Nanowire horizontal growth and substrate removal The present invention provides processes for producing horizontal nanowires that are separate and oriented and allow for processing directly on a substrate material. The nanowires grow horizontally by suppressing vertical growth from a nucleating particle, such as a... | 07/14/2009 |
| 7547617 | Semiconductor device including container having epitaxial silicon therein Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided. ... | 06/16/2009 |
| 7524742 | Structure of metal interconnect and fabrication method thereof A process and structure for a metal interconnect includes providing a substrate with a first electric conductor, forming a first dielectric layer and a first patterned hard mask, using the first patterned hard mask to form a first opening and a second electric condu... | 04/28/2009 |
| 7524741 | Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmo... | 04/28/2009 |
| 7517775 | Methods of selective deposition of heavily doped epitaxial SiGe The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900... | 04/14/2009 |
| 7439142 | Methods to fabricate MOSFET devices using a selective deposition process In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsi... | 10/21/2008 |
| 7407872 | Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microsco... | 08/05/2008 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7368263 | Chemically assembled nano-scale circuit elements The present invention provides nano-scale devices, including electronic circuits, using DNA molecules as a support structure. DNA binding proteins are used to mask regions of the DNA as a material, such as a metal is coated onto the DNA. Included in the invention ar... | 05/06/2008 |
| 7351668 | Film formation method and apparatus for semiconductor process An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a ca... | 04/01/2008 |
| 7341844 | Methods for diagnosing autism The invention relates to the use of Reelin as a marker for diagnosing psychiatric conditions. The disclosed tools and techniques can facilitate the diagnosis of psychiatric disorders including major depression, bipolar disorder, schizophrenia and autism. ... | 03/11/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7335395 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to cre... | 02/26/2008 |
| 7329593 | Germanium deposition A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing th... | 02/12/2008 |
| 7320931 | Interfacial layer for use with high k dielectric materials Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the critical thickness for pure germanium on silicon. The germanium layer serves... | 01/22/2008 |
| 7300859 | Atmospheric glow discharge with concurrent coating deposition A plasma is produced in a treatment space (58) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes (54,56) separated by a dielectric material (64), a precursor material is i... | 11/27/2007 |
| 7301197 | Non-volatile nanocrystal memory transistors using low voltage impact ionization A low voltage non-volatile charge storage transistor has a nanocrystal layer for permanently storing charge until erased. A subsurface charge injector generates secondary carriers by stimulating electron-hole current flowing toward the substrate, with some carriers ... | 11/27/2007 |
| 7294198 | Process for producing single-crystal gallium nitride A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. a... | 11/13/2007 |
| 7291544 | Homoepitaxial gallium nitride based photodetector and method of producing A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104... | 11/06/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7256466 | Nanosensors Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described. ... | 08/14/2007 |
| 7253086 | Recessed drain extensions in transistor device A method of forming an integrated circuit transistor (50). The method provides a first semiconductor region (52) and forms (110) a gate structure (54x) in a fixed position relative to the first semiconductor region. The gate st... | 08/07/2007 |
