Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 7977219 | Manufacturing method for silicon wafer In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment... | 07/12/2011 |
| 7700464 | High-throughput printing of semiconductor precursor layer from nanoflake particles Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or p... | 04/20/2010 |
| 7605062 | Doped nanoparticle-based semiconductor junction A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconduct... | 10/20/2009 |
| 7375011 | Ex-situ doped semiconductor transport layer A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticl... | 05/20/2008 |
| 7358162 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temp... | 04/15/2008 |
| 7316969 | Method and apparatus for thermally treating substrates The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents an apparatus and method for thermally treating substrates, wherein the... | 01/08/2008 |
| 7316967 | Flow method and reactor for manufacturing noncrystals A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method. ... | 01/08/2008 |
| 7314513 | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA a... | 01/01/2008 |
| 7294586 | Method of processing a substrate, heating apparatus, and method of forming a pattern A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically ampl... | 11/13/2007 |
| 7256082 | Production method for semiconductor device A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film, silicon nitride film or silicon oxide nitride film or the like on a sil... | 08/14/2007 |
| 7256147 | Porous body and manufacturing method therefor It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present invention relates to a porous body having a network structure skeleto... | 08/14/2007 |
| 7229859 | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section ... | 06/12/2007 |
| 7223802 | High order silane composition, and method of forming silicon film using the composition It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safet... | 05/29/2007 |
| 7198992 | Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 04/03/2007 |
| 7195669 | Method of producing silicon monocrystal A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal r... | 03/27/2007 |
| 7141492 | Method for forming thin-film, apparatus for forming thin-film, method for manufacturing semiconductor device, electro-optical unit, and electronic apparatus The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor device, an electro-optical unit, and an electronic apparatus. An... | 11/28/2006 |
| 7132372 | Method for preparing a semiconductor substrate surface for semiconductor device fabrication A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe.... | 11/07/2006 |
| 7098119 | Thermal anneal process for strained-Si devices A method is disclosed for forming a semiconductor device using strained silicon. After forming a first substrate material with a first natural lattice constant on a device substrate and a second substrate material with a second natural lattice constant on the first ... | 08/29/2006 |
| 7083680 | Sublimation and purification method A glass bottle containing a sample of an organic material to be purified is located at a position surrounded by a heater near one end in an outer glass tube. An inner glass tube for catching organic crystals obtained by recrystallization is located at a position nea... | 08/01/2006 |
| 7069101 | Computer integrated manufacturing techniques The present invention provides a novel distributed factory system framework including a novel factory automation lifecycle (200) having lifecycle activities for SW developing and integrating (210), installing and administrating (220), factory mo... | 06/27/2006 |
| 7052980 | Transistor manufacturing method, electrooptical apparatus and electronic apparatus A method for manufacturing a transistor, includes the steps of preparing a substrate, preparing a liquid material containing a silane compound, the silane compound forming a high order silane when photopolymerized, coating the liquid material on the substrate so as ... | 05/30/2006 |
| 7049695 | Method and device for heat dissipation in semiconductor modules A structure and method are provided for dissipating heat from a semiconductor device chip. A first layer of a dielectric material (e.g. polyimide) is formed on a front side of a heat spreader (typically Si). A plurality of openings are formed through this first laye... | 05/23/2006 |
| 7030419 | Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for optical applications in which silicon nanoclusters and rare earth el... | 04/18/2006 |
| 7001778 | Method of making layered superlattice material with improved microstructure In the manufacture of an integrated circuit, a first electrode (48) is formed on a substrate (28). In a first embodiment, a strontium bismuth tantalate layer (50) and a second electrode (52) are formed on top of the first electrode (48... | 02/21/2006 |
| 7001787 | Electrode manufacturing method An electrode manufacturing method comprises: forming plural protruding portions on a surface of a substrate; introducing first particles having a size that changes according to heat, light, or a first solvent between said plural protruding portions; changing the siz... | 02/21/2006 |
| 6973710 | Method and apparatus for making devices A method and an apparatus for manufacturing a device are provided. The method and the apparatus can form micro wiring without undesired wetting and spreading using an inexpensive functional-liquid supplying method. A method for forming a device, such as a radiofrequ... | 12/13/2005 |
| 6975012 | Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crysta... | 12/13/2005 |
| 6952656 | Wafer fabrication data acquisition and management systems The present invention provides a semiconductor processing device (800) including a tool (802) having one or more sensors, a primary data communication port (804) and a secondary data communication port (806). A sensor data acquisition sub... | 10/04/2005 |
| 6943054 | Attachment of organic molecules to group III, IV or V substrates This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-bas... | 09/13/2005 |
| 6913956 | Semiconductor device and method of manufacturing the same The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 07/05/2005 |
| 6911367 | Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions The invention includes methods of forming epitaxially-grown semiconductive material having a flattened surface, and methods of incorporating such material into trenched regions and elevated/source drain regions. A method of forming epitaxially-grown semiconductive m... | 06/28/2005 |
| 6908797 | Method of manufacturing a semiconductor device The present invention provides a manufacturing method of a semiconductor device, which is able to improve on-current and mobility of a polycrystal TFT without disturbing a high integration level, and also provide a semiconductor device obtained in accordance with th... | 06/21/2005 |
| 6905635 | Gallium nitride phosphor, its method of manufacture, and a display device using the phosphor This invention presents a gallium nitride phosphor with superior light emitting characteristics, its method of manufacture, and a display device which uses the phosphor. By heat treatment or microwave irradiation of gallium nitride phosphor powder in an ambient cont... | 06/14/2005 |
| 6897130 | Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature The present invention provides a method for thermal processing a semiconductor wafer wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash discharge lamp after preheating the semiconductor wafer to a predetermined t... | 05/24/2005 |
| 6884700 | Method of manufacturing device, device, and electronic apparatus A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of appl... | 04/26/2005 |
| 6878645 | Method for manufacturing silicon wafer Provided is a process for manufacturing a silicon wafer employing heat treatment which is applied on the silicon wafer in inert gas atmosphere represented by Ar annealing to annihilate Grown-in defects in a surface layer region of the silicon wafer as well as to cau... | 04/12/2005 |
| 6825069 | System and method for fabricating a transistor by a low temperature heat treatment process The invention provides a method for fabricating a transistor in which the bulk characteristics of the gate insulating film and the interface characteristics can be simultaneously improved by a low-temperature process. The method can include the step of forming a sem... | 11/30/2004 |
| 6716675 | Semiconductor device, method of manufacturing semiconductor device, lead frame, method of manufacturing lead frame, and method of manufacturing semiconductor device with lead frame The present invention relates to a leadless surface-mount resin-sealing semiconductor device and a manufacturing method thereof; in a semiconductor device comprising a semiconductor element, a resin package sealing this semiconductor element, a terminal formed on a ... | 04/06/2004 |
| 6713370 | Process for the preparation of an ideal oxygen precipitating silicon wafer capable of forming an enhanced denuded zone A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a bulk layer between front and back surface layers. The wafer is subjected to a heat-trea... | 03/30/2004 |
| 6649544 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprise... | 11/18/2003 |
