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| Number | Title | Issue Date |
| 8153512 | Patterning techniques A method of forming a patterned layer, including the steps of: (i) depositing via a liquid medium a first material onto a substrate to form a first body on said substrate; (ii) depositing via a liquid medium a second material onto said substrate to form a second bod... | 04/10/2012 |
| 8026159 | Method of manufacturing semiconductor device and substrate processing apparatus A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the pr... | 09/27/2011 |
| 8008173 | III nitride single crystal and method of manufacturing semiconductor device incorporating the III nitride single crystal A III nitride single-crystal manufacturing method in which a liquid layer (3) of 200 μm or less thickness is formed in between a substrate (1) and a III nitride source-material baseplate (2), and III nitride single crystal (4) is grown o... | 08/30/2011 |
| 7964481 | Method for fabricating an inorganic nanocomposite An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a ... | 06/21/2011 |
| 7732308 | Process for depositing layers containing silicon and germanium The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid sta... | 06/08/2010 |
| 7622371 | Fused nanocrystal thin film semiconductor and method A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction te... | 11/24/2009 |
| 7582545 | Forming method for film pattern, device, electro-optical apparatus, electronic apparatus, and manufacturing method for active matrix substrate A forming method for a film pattern, includes: forming a first bank layer on a substrate; forming a second bank layer on the first bank layer; patterning the first bank layer and the second bank layer thereby forming a bank having a pattern formation region includin... | 09/01/2009 |
| 7399688 | Identification code drawing method, substrate, display module, and electronic apparatus An identification code drawing method of drawing an identification code on a substrate includes: cleaning the substrate by using a cleaning unit; performing lyophobization for the substrate; discharging liquid droplets of functional liquid, into which particles of m... | 07/15/2008 |
| 7364996 | Methods of fabricating patterned layers on a substrate A method of fabricating a pattern on a substrate, comprises the steps of: depositing; such as by ink-jet printing, multiple drops of a first liquid material as a first deposit (15) on the substrate: depositing, such as by ink-jet printing, multiple drops of a... | 04/29/2008 |
| 7326654 | Monodisperse nanoparticles produced by size-selective photoetching reaction Monodisperse nanoparticles are prepared with a high degree of reproducibility by controlling pH in size-selective photoetching. The nanoparticles have uniform optical properties and other properties. ... | 02/05/2008 |
| 7326953 | Layer sequence for Gunn diode The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped nd GaAs layer (3), a graded AlGaAs layer (5), which is placed upon the first h... | 02/05/2008 |
| 7288468 | Luminescent efficiency of semiconductor nanocrystals by surface treatment A method for improving the luminescent efficiency of semiconductor nanocrystals by surface treatment with a reducing agent to produce an improvement in luminescent efficiency and quantum efficiency without creating changes in the luminescent characteristics of the n... | 10/30/2007 |
| 7265037 | Nanowire array and nanowire solar cells and methods for forming the same Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 μm. They can be formed on any suitable substrate. Photovoltaic devices are also described. ... | 09/04/2007 |
| 7256147 | Porous body and manufacturing method therefor It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present invention relates to a porous body having a network structure skeleto... | 08/14/2007 |
| 7250359 | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer on the at least one first layer.... | 07/31/2007 |
| 7226504 | Method to form thick relaxed SiGe layer with trench structure A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium ... | 06/05/2007 |
| 7199033 | Pattern forming method, device, method of manufacture thereof, electro-optical apparatus, and electronic apparatus A method of forming a predetermined pattern by disposing a functional liquid on a substrate, the method includes the steps of forming banks on the substrate, and disposing the functional liquid on a region divided by the banks, wherein a width of the region is parti... | 04/03/2007 |
| 7183146 | Method of manufacturing semiconductor device To provide a method for manufacturing a wiring, a conductive layer, a display device, and a semiconductor device, each of which can meet a large sized substrate and which is manufactured with a higher throughput by using a material efficiently, the conductive layer ... | 02/27/2007 |
| 7183131 | Process for producing a nanoelement arrangement, and nanoelement arrangement A process for producing a nanoelement arrangement and to a nanoelement arrangement. A first nanoelement is at least partially covered with catalyst material for catalyzing the growth of nanoelements. Furthermore, at least one second nanoelement is grown on the catal... | 02/27/2007 |
| 7169631 | Silicon and silicon/germanium light-emitting device, methods and systems A light-emitting device and optical communication system based on the light-emitting device is disclosed. The light-emitting device is formed in a float-zone substrate. The light-emitting device includes on the substrate lower surface a reflective layer and on the u... | 01/30/2007 |
| 7164183 | Semiconductor substrate, semiconductor device, and method of manufacturing the same A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress t... | 01/16/2007 |
| 7148092 | Semiconductor device and method of manufacturing the same To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which c... | 12/12/2006 |
| 7138583 | Method and apparatus for maintaining a separation between contacts Methods and apparatus for controlling the distance between contact pads or leads which are to be interfaced are disclosed. According to one aspect of the present invention, an electrical package includes a body and a contact. The body includes electrical circuitry s... | 11/21/2006 |
| 7115507 | Patterning method A substrate is patterned by forming an indent region 8 in the surface 10 of a substrate 4 and depositing a liquid material onto the surface 10 at selected locations adjacent to the indent region 8. The liquid material spreads over ... | 10/03/2006 |
| 7045446 | Semiconductor device fabrication method In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate with a plurality of recessed portions formed therein, protruding poti... | 05/16/2006 |
| 7037812 | Manufacturing method of circuit substrate, circuit substrate and manufacturing device of circuit substrate A manufacturing method of a circuit substrate, in which an electronic circuit is formed on a surface of a base member by a solution jetting device. The manufacturing method comprises: jetting liquid drops of a solution which is supplied into a nozzle having a discha... | 05/02/2006 |
| 7018906 | Chemical mechanical polishing for forming a shallow trench isolation structure A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relatively small active regions, is provided. The meth... | 03/28/2006 |
| 7001713 | Method of forming partial reverse active mask A method of forming a partial reverse active mask. A mask pattern comprising a large active region pattern with an original dimension and a small active region pattern is provided. The large active region pattern and the small active region pattern are shrunk until ... | 02/21/2006 |
| 7001787 | Electrode manufacturing method An electrode manufacturing method comprises: forming plural protruding portions on a surface of a substrate; introducing first particles having a size that changes according to heat, light, or a first solvent between said plural protruding portions; changing the siz... | 02/21/2006 |
| 6884700 | Method of manufacturing device, device, and electronic apparatus A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of appl... | 04/26/2005 |
| 6869863 | Fabrication process of solar cell Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step. ... | 03/22/2005 |
| 6838153 | Layered product, capacitor and a method for producing the layered product A method for producing a laminate having resin layers and thin metal layers by repeating a process unit comprising a step of laminating a resin layer by applying a resin material, a step of depositing a patterning material on the resin layer and a step of laminating... | 01/04/2005 |
| 6762113 | Method for coating a semiconductor substrate with a mixture containing an adhesion promoter A method of coating a semiconductor substrate material with a coating material consisting of the steps of mixing an adhesion promoter with a coating material and applying the mixture to a semiconductor substrate material. The invention also includes means for coatin... | 07/13/2004 |
| 6660615 | Method and apparatus for growing layer on one surface of wafer A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bot... | 12/09/2003 |
| 6635555 | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films A method is provided to produce thin polycrystalline films having a single predominant crystal orientation. The method is well suited to the production of films for use in production of thin film transistors (TFTs). A layer of amorphous silicon is deposit... | 10/21/2003 |
| 6566277 | Liquid-phase growth method, liquid-phase growth apparatus, and solar cell The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a seco... | 05/20/2003 |
| 6478883 | Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits hi... | 11/12/2002 |
| 6448159 | Chemical mechanical polishing for forming a shallow trench isolation structure A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relative large active regions and a number of relative small active regions, is provided. T... | 09/10/2002 |
| 6413791 | Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminance An epitaxial semiconductor crystal plate or wafer capable of attaining increased reliability with enhanced luminance, a manufacturing method thereof, as well as a light-emitting diode (LED). It has been found that epitaxial wafers with enhanced illuminanc... | 07/02/2002 |
| 6406982 | Method of improving epitaxially-filled trench by smoothing trench prior to filling A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that an opening width thereof is wider than that of... | 06/18/2002 |
