Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 8163570 | Method of initiating molecular bonding A method of initiating molecular bonding, comprising bringing one face of a first wafer to face one face of a second wafer and initiating a point of contact between the two facing faces. The point of contact is initiated by application to one of the two wafers, for ... | 04/24/2012 |
| 8153450 | Method for manufacturing SIMOX wafer At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means ... | 04/10/2012 |
| 8148175 | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device A manufacturing apparatus for a semiconductor device, treating a SiN film formed on a wafer with phosphoric acid solution, including a processing bath to store phosphoric acid solution provided for treatment of the wafer, a control unit for calculating integrated Si... | 04/03/2012 |
| 8143074 | Semiconductor processing system and method of processing a semiconductor wafer A method of processing semiconductor wafers includes applying reactive gas through a plurality of inlets to the semiconductor wafers. The method further includes removing exhaust gas resulting from the step of applying reactive gas. The removing of the exhaust gas i... | 03/27/2012 |
| 8110412 | Integrated circuit wafer system with control strategy An integrated circuit wafer system includes an integrated circuit wafer, measuring thicknesses of the integrated circuit wafer, calculating a change in temperature ramp rates and thickness offsets for subsequent processing based on the temperature ramp rates for pri... | 02/07/2012 |
| 8097474 | Integrated circuit chip design flow methodology including insertion of on-chip or scribe line wireless process monitoring and feedback circuitry Disclosed are embodiments of a design and manufacturing system and an associated method that allow for design analysis and for insertion, during wafer manufacture, of intra-process monitoring circuitry. These embodiments use a library of pre-qualified intra-process ... | 01/17/2012 |
| 8097473 | Alignment method, exposure method, pattern forming method, and exposure apparatus An alignment method is provided in which a substrate including first and second layers is aligned in forming a second pattern in the second layer. The method includes storing first alignment measurement data to be used in alignment performed in forming a first patte... | 01/17/2012 |
| 8088632 | Elemental analysis method and semiconductor device manufacturing method Protons are entered into a substrate to be analyzed at a proton incident angle larger than 0° and smaller 90°. Excited by the entered protons and emitted from the substrate to be analyzed, the characteristic X-ray is measured by an energy dispersive X-ray detector... | 01/03/2012 |
| 8071397 | Semiconductor fabricating apparatus with function of determining etching processing state A semiconductor fabricating method including: placing the semiconductor wafer having a film thereon inside of a chamber; generating plasma; detecting a quantity of interference lights for each of at least two wavelengths obtained from a surface of the wafer for a pr... | 12/06/2011 |
| 8053254 | Apparatus for forming thin film and method of manufacturing semiconductor film An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply u... | 11/08/2011 |
| 8053253 | Method for manufacturing semiconductor device An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in ... | 11/08/2011 |
| 8003411 | Device for processing a substrate, method of processing a substrate and method of manufacturing semiconductor device Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing... | 08/23/2011 |
| 7981700 | Semiconductor oxidation apparatus and method of producing semiconductor element A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamb... | 07/19/2011 |
| 7968353 | Apparatus and methods for manufacturing thin-film solar cells Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentiall... | 06/28/2011 |
| 7960187 | Recovery processing method to be adopted in substrate processing apparatus, substrate processing apparatus and program The present invention provides a recovery processing method to restore the substrate processing apparatus to an operating state after correcting an abnormality having occurred in the substrate processing apparatus in operation and having resulted in a stop in the op... | 06/14/2011 |
| 7955874 | Method of producing bonded silicon wafer A bonded silicon wafer is produced by a method comprising a step of implanting oxygen ions from one surface of a silicon wafer for active layer to form an oxygen ion implanted layer, a step of bonding the one surface of the silicon wafer for active layer to one surf... | 06/07/2011 |
| 7935545 | Method and apparatus for performing a site-dependent dual patterning procedure The present invention includes a method of performing a double-patterning (DP) processing sequence using a plurality of Site-Dependent (S-D) procedures, the method including receiving a first set of wafers by one or more subsystems in a processing system, creating o... | 05/03/2011 |
| 7888141 | Manufacturing method for semiconductor integrated device In a chip pick-up process after dicing in an assembly process during manufacture of a semiconductor integrated circuit device it is an important subject to diminish a pick-up defect caused by the reduction in thickness of each chip which is proceeding in quick tempo... | 02/15/2011 |
| 7875468 | Body to be plated, method of determining plated film thickness, and method of manufacturing semiconductor device A structure to be plated includes a body to be plated 11 on which plating is formed, and plated film thickness determining member 16 opposed to and electrically isolated from the body to be plated 11 through a slit portion 12. The plated ... | 01/25/2011 |
| 7851233 | E-chuck for automated clamped force adjustment and calibration The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a wafer; measuring the wafer for wafer data after the first process; securing the wafer on an E-chuck in a processing chamber; collecting sensor d... | 12/14/2010 |
| 7842519 | In-line lithography and etch system The invention can provide a method of processing a wafer using Site-Dependent (S-D) processing sequences that can include S-D creation procedures, S-D evaluation procedures, and S-D transfer sequences. The S-D creation procedures can be performed using S-D processin... | 11/30/2010 |
| 7838309 | Measurement and control of strained devices A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production ... | 11/23/2010 |
| 7838308 | Method of controlling embedded material/gate proximity A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gat... | 11/23/2010 |
| 7829353 | Pulsed mass flow delivery system and method A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to b... | 11/09/2010 |
| 7816151 | Nanoporous membrane reactor for miniaturized reactions and enhanced reaction kinetics Reactors and methods for miniaturized reactions having enhanced reaction kinetics. In particular the subject matter is directed to chemical and biological reactions conducted in a nanoporous membrane environment. The subject matter contemplates methods for modifying... | 10/19/2010 |
| 7767471 | Auto routing for optimal uniformity control A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a fir... | 08/03/2010 |
| 7767470 | Semiconductor wafers with highly precise edge profile and method for producing them A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant... | 08/03/2010 |
| 7767472 | Substrate processing method and substrate processing apparatus A substrate processing method is used to polish a substrate. The substrate processing method includes rotating a substrate 13 by a motor 12, polishing a first surface of a peripheral portion of the substrate 13 by pressing a polishing surface of... | 08/03/2010 |
| 7759135 | Method of forming a sensor node module A method of manufacturing a sensor node module includes forming a protruding structure on a carrier. A sensor die is applied onto the protruding structure with an active sensing surface of the sensor die facing the carrier. The sensor die is encapsulated with mold m... | 07/20/2010 |
| 7736912 | Semiconductor production method and semiconductor production device The objective of the present invention is to prevent the variation in an ashing rate according to a temporal change within an ashing chamber. Then, in order to maintain the ashing rate, the decrease in the number of oxygen atoms in ashing gas within a process chambe... | 06/15/2010 |
| 7713756 | Apparatus and method for plasma etching A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the proc... | 05/11/2010 |
| 7700376 | Edge temperature compensation in thermal processing particularly useful for SOI wafers A retuning process particularly useful with an Ar/H2 smoothing anneal by rapid thermal processing (RTP) of a silicon-on-insulator (SOI) wafer performed after cleavage. The smoothing anneal or other process is optimized including a radial temperature profi... | 04/20/2010 |
| 7695984 | Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes Method and system for detecting endpoint for a plasma etch process are provided. In accordance with one embodiment, the method provides a semiconductor substrate having a film to be processed thereon. The film is processed in a plasma environment during a time perio... | 04/13/2010 |
| 7695983 | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a f... | 04/13/2010 |
| 7678586 | Structure and method to prevent charge damage from e-beam curing process An example embodiment is a method of curing a film over a semiconductor structure. We provide a semiconductor structure comprised of a substrate and an interconnect structure. We provide a film over the semiconductor structure. We provide an electron source, an anod... | 03/16/2010 |
| 7618830 | Rapid thermal processing apparatus and methods Rapid thermal processing apparatus methods are disclosed. In a disclosed apparatus, rapid thermal processing is carried out when the residual oxygen detected by a residual oxygen detector does not exceed a predetermined tolerance level. Accordingly, it is possible t... | 11/17/2009 |
| 7592190 | Method of evaluating characteristics of and forming of an insulating film for a semiconductor device A method of evaluating characteristics of an insulating film 1 is disclosed. The insulating film 1 is formed of an insulative inorganic material as a main material, the insulative inorganic material containing silicon and oxygen. The insulating film | 09/22/2009 |
| 7572647 | Internal balanced coil for inductively coupled high density plasma processing chamber A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a s... | 08/11/2009 |
| 7569402 | Chip data providing system and chip data providing server used therefore A chip data providing system is provided. The chip data providing system is equipped with an inspection device for inspecting each chip after processing steps of forming integrated circuits on a plurality chips included in a semiconductor wafer are completed, an ins... | 08/04/2009 |
| 7534627 | Methods and systems for controlling critical dimensions in track lithography tools A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a... | 05/19/2009 |
