Class 438/498 - Differential etching

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the differential etching of the substrate
No. of patents: 29
Last issue date: 03/30/2010

Number	Title	Issue Date
7687381	Method of forming electrical interconnects within insulating layers that form consecutive sidewalls including forming a reaction layer on the inner sidewall Methods of forming integrated circuit device having electrical interconnects include forming an electrically insulating layer on a substrate and forming a hard mask on the electrically insulating layer. The hard mask and the electrically insulating layer are selecti...	03/30/2010
7265024	DMOS device having a trenched bus structure A DMOS device having a trench bus structure thereof is introduced. The trench bus structure comprises a field oxide layer formed on a P substrate, and a trench extending from an top surface of the field oxide layer down to a lower portion of the P substrate. A gate ...	09/04/2007
7022247	Process to form fine features using photolithography and plasma etching Methods of making a sharp pointed structure (19), such as a sharp pointed structure in a semiconductor, includes providing a substrate (14) and then depositing an oxide layer (16), such as silicon oxide or silicon nitride, on the substrate (1...	04/04/2006
6939765	Integration method of a semiconductor device having a recessed gate electrode Embodiments of the invention are directed to an integrated circuit device and a method for forming the device. In some embodiments of the invention, two types of transistors are formed on a single substrate, transistors: transistors having a recessed gate, and trans...	09/06/2005
6909142	Semiconductor device including a channel stop structure and method of manufacturing the same It is an object to obtain a semiconductor device comprising a channel stop structure which is excellent in an effect of stabilizing a breakdown voltage and a method of manufacturing the semiconductor device. A silicon oxide film (2) is formed on an upper surf...	06/21/2005
6602793	Pre-clean chamber An improved pre-clean chamber of a semiconductor processing system minimizes the generation of particulates during processing, thereby decreasing contamination levels that can adversely affect plasma vapor deposition film properties while also decreasing ...	08/05/2003
6475884	Devices and methods for addressing optical edge effects in connection with etched trenches In a first aspect of the invention, a modified semiconductor substrate is provided. The modified substrate comprises: (1) a semiconductor substrate; (2) at least one buffer layer provided over at least a portion of the substrate; and (3) a plurality of tr...	11/05/2002
6100172	Method for forming a horizontal surface spacer and devices formed thereby The present invention provides a method for forming self-aligned spacers on the horizontal surfaces while removing spacer material from the vertical surfaces. The preferred method uses a resist that can be made insoluble to developer by the use of an impl...	08/08/2000
6083520	Bioactive feed The present invention relates to a bioactive feed pellet comprising besides commonly used nutritionally valuable components, a biologically active ingredient such as a therapeutically or prophylactically active compound, a vaccine, a pigment, a vitamin, a...	07/04/2000
6033995	Inverted layer epitaxial liftoff process The invention relates to a method for integrating semiconductor device epilayers with arbitrary host substrates, where an indium gallium arsenide etch-stop layer (34) is deposited on an indium phosphide growth substrate (32) and device epilayers (36, 38) ...	03/07/2000
5918128	Reduced channel length for a high performance CMOS transistor An integrated circuit fabrication process is provided in which a transistor having an ultra short channel length is formed by multiple etchings of a gate conductor layer. After formation of the gate conductor using a photolithographic process, the lateral...	06/29/1999
5561079	Stalagraphy A method of lithography is disclosed for making very small structures (10-6 m and smaller) on a surface such as in the manufacture of semiconductor devices. Many micron-sized or smaller droplets of a suitable material are formed on the surface,...	10/01/1996
5443685	Composition and method for off-axis growth sites on nonpolar substrates Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a ...	08/22/1995
5358881	Silicon topography control method A semiconductor method for establishing a predetermined, constant-depth recess in a semiconductor structure fabricated on the surface of a silicon substrate or wafer. Fabrication includes first growing a thin screen oxide layer on the surface of the wafer...	10/25/1994
5314837	Method of making a registration mark on a semiconductor The process of making a registration mark on an integrated-circuit substrate wherein photoimaging first is used to define an optically-recognizable mark on a predetermined position of the substrate, and the substrate then is covered with silicon dioxide. ...	05/24/1994
5312764	Method of doping a semiconductor substrate A method of decoupling a step for modulating a defect density from a step for modulating a junction depth. A semiconductor substrate (30) having a portion doped with a dopant (34) is heated to a pre-oxidation anneal temperature in a pre-oxidation anneal s...	05/17/1994
5206185	Semiconductor laser device A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the...	04/27/1993
5202290	Process for manufacture of quantum dot and quantum wire semiconductors Quantum dot and quantum wire semiconductors in the nanosize range are produced by a process which utilizes a microporous aluminum oxide surface layer on an aluminum metal substrate as a template for the semiconducting material. The microporous surface lay...	04/13/1993
5192710	Method of making a semiconductor laser with a liquid phase epitaxy layer and a plurality of gas phase or molecular beam epitaxy layers A semiconductor laser which comprises a grating, a waveguide layer applied to the grating by LPE, and a plurality of layers disposed above the waveguide layer. This laser is characterized in that the layers disposed on the waveguide layer are applied with...	03/09/1993
5160492	Buried isolation using ion implantation and subsequent epitaxial growth A method of producing a buried insulation layer used to channel current through a small opening through the insulation layer. Ions are implanted to a depth controlled by the ion kinetic energy and are activated to form the insulation layer. A groove, pref...	11/03/1992
5114876	Selective epitaxy using the gild process The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconduc...	05/19/1992
4963507	Method and manufacturing a laser diode with buried active layer In the manufacture of laser diodes having a stripe-shaped, active layer, a problem arises upon application of lateral layers, particularly of blocking pn-junctions for lateral current conduction, in that these layers are undesired above the active layer. ...	10/16/1990
4818722	Method for generating a strip waveguide A method for generating a strip laser in a buried hetero-structure composed of layers, wherein a raised strip is etched out of the layer structure and the strip is laterally etched with an erosion melt. The lateral edges of the laser active layer are prot...	04/04/1989
4561915	Process for epitaxial growth on a corrugated wafer A process for epitaxial growth which effects epitaxial growth while suppressing thermal deformation of surface corrugations of an InGaAsP/InP system semiconductor substrate. Deformation of surface corrugations is suppressed by disposing a GaAs1-z	12/31/1985
4381956	Self-aligned buried channel fabrication process A technique is described for the preparation of buried channels of arbitrary conductivity type in a semiconductor device or integrated circuit containing oxide moats in an epitaxial surface layer. By following a specific sequence of process steps, two mas...	05/03/1983
4255206	Method for manufacturing a semiconductor structure A method for manufacturing a semiconductor structure, especially for optoelectronic components, in which, at least one layer of a further semiconductor compound is deposited epitaxially on a substrate of a semiconductor compound. The surface of the substr...	03/10/1981
4251299	Planar epitaxial refill using liquid phase epitaxy Planar silicon device structures are fabricated by refilling grooves etched in an oxide-coated silicon substrate using liquid phase epitaxial growth from a tin melt. Since tin does not wet silicon dioxide, silicon nucleation on the oxide-covered areas of ...	02/17/1981
4178195	Semiconductor structure A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the bin...	12/11/1979
4073676	GaAs-GaAlAs semiconductor having a periodic corrugation at an interface A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700°...	02/14/1978

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Class 438/498 - Differential etching