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| Number | Title | Issue Date |
| 8168517 | Method for epitaxial growth and epitaxial layer structure using the method There are provided a method for epitaxial growth capable of securing stable optical and electrical characteristics by minimizing defects produced in a second epitaxial layer when growing the second epitaxial layer on a first epitaxial layer having defects formed the... | 05/01/2012 |
| 8093143 | Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order: simultaneously polishing the fron... | 01/10/2012 |
| 7998847 | III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitri... | 08/16/2011 |
| 7968437 | Semiconductor device manufacturing method and substrate processing apparatus Productivity and product yield, as well as the step coverage and the adhesion are improved. A film forming process includes an initial film forming step, and a main film forming step. In the initial film forming step, a step of supplying a material gas into a proces... | 06/28/2011 |
| 7875535 | Compound semiconductor device using SiC substrate and its manufacture A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer ... | 01/25/2011 |
| 7682952 | Method for forming low defect density alloy graded layers and structure containing such layers A structure and method of forming same, comprising a low threading density alloy graded layer, deposited according to a deposition temperature profile in correspondence with increasing alloy composition. In one embodiment, a first substantially relaxed alloy graded ... | 03/23/2010 |
| 7629237 | MBE growth of a semiconductor layer structure A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14)... | 12/08/2009 |
| 7550370 | Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density A method of forming a silicon germanium on insulator (SGOI) structure. A SiGe layer is deposited on an SOI wafer. Thermal mixing of the SiGe and Si layers is performed to form a thick SGOI with high relaxation and low stacking fault defect density. The SiGe layer is... | 06/23/2009 |
| 7514342 | Method and apparatus for forming deposited film A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias volta... | 04/07/2009 |
| 7491628 | Method for patterning large scale nano-fibrous surfaces using capillography A method of assembling large numbers of nanoscale structures in pre-determined ways using fluids or capillary lithography to control the patterning and arrangement of the individual nanoscale objects and nanostructures formed in accordance with the inventive method ... | 02/17/2009 |
| 7393710 | Fabrication method of multi-wavelength semiconductor laser device The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second ar... | 07/01/2008 |
| 7365022 | Additive printed mask process and structures produced thereby A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material... | 04/29/2008 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7271071 | Method of forming a catalytic surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate is provided which has a first substrate surface comprising at least o... | 09/18/2007 |
| 7256110 | Crystal manufacturing method A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming ... | 08/14/2007 |
| 7226850 | Gallium nitride high electron mobility transistor structure A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on... | 06/05/2007 |
| 7220312 | Methods for treating semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 05/22/2007 |
| 7217322 | Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein arsenic and germanium are introduced subsequently into different regions of... | 05/15/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7198671 | Layered substrates for epitaxial processing, and device A substrate comprising at least two layers which have different thermal expansion coefficients (TECs) is used for subsequent epitaxial growth of semiconductors. A typical example is an epitaxial growth of III-V Nitride (InGaAlBNAsP alloy semiconductor) on sapphire. ... | 04/03/2007 |
| 7192849 | Methods of growing nitride-based film using varying pulses Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each eleme... | 03/20/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
| 7183208 | Methods for treating pluralities of discrete semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 02/27/2007 |
| 7183186 | Atomic layer deposited ZrTiOfilms After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but i... | 02/27/2007 |
| 7179727 | Formation of lattice-tuning semiconductor substrates A method of forming a lattice-tuning semiconductor substrate comprises the steps of defining parallel strips of a Si surface by the provision of spaced parallel oxide walls (2) on the surface, selectively growing a first SiGe layer on the strips such that fir... | 02/20/2007 |
| 7179728 | Optical component and manufacturing method thereof, microlens substrate and manufacturing method thereof, display device, and imaging device The invention provides an optical component whose siting, shape and size are well controlled and a method of manufacturing such an optical component. The optical component of the present invention includes a base member disposed on a substrate, and an optical member... | 02/20/2007 |
| 7150568 | Light-receiving element, manufacturing method for the same, optical module, and optical transmitting device To provide a light-receiving element that is capable of high-speed operation and includes an optical element with controlled setting position, shape and size, a manufacturing method for the light-receiving element, and an optical module and an optical transmitting d... | 12/19/2006 |
| 7150789 | Atomic layer deposition methods An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 12/19/2006 |
| 7135369 | Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c... | 11/14/2006 |
| 7128787 | Atomic layer deposition method An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 10/31/2006 |
| 7125732 | Semiconductor light emitting device and its manufacturing method In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of a... | 10/24/2006 |
| 7115427 | Red light-emitting device and method for preparing the same The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent con... | 10/03/2006 |
| 7112243 | Method for producing Group III nitride compound semiconductor The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound ... | 09/26/2006 |
| 7112544 | Method of atomic layer deposition on plural semiconductor substrates simultaneously The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 09/26/2006 |
| 7101444 | Defect-free semiconductor templates for epitaxial growth A semiconductor device includes at least one defect-free epitaxial layer. At least a part of the device is manufactured by a method of fabrication of defect-free epitaxial layers on top of a surface of a first solid state material having a first thermal evaporation ... | 09/05/2006 |
| 7101813 | Atomic layer deposited Zr-Sn-Ti-O films A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and ox... | 09/05/2006 |
| 7084078 | Atomic layer deposited lanthanide doped TiOx dielectric films A dielectric film containing atomic layer deposited lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lantha... | 08/01/2006 |
| 7067841 | Organic electronic devices Organic electronic devices are fabricated by a process includes forming an organic layer including: placing a first liquid composition over a first portion of a surface of a substrate without a well structure connected to or adjacent the first portion of the surface... | 06/27/2006 |
| 7060632 | Methods for fabricating strained layers on semiconductor substrates Methods for fabricating multi-layer semiconductor structures including strained material layers using a minimum number of process tools and under conditions optimized for each layer. Certain regions of the strained material layers are kept free of impurities that ca... | 06/13/2006 |
