Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 7985664 | Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film forma... | 07/26/2011 |
| 7666766 | Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film forma... | 02/23/2010 |
| 7452789 | Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element A method for forming an underlayer composed of a GaN-based compound semiconductor is provided. In this method, at the time of epitaxial growth of an underlayer on the surface of a sapphire substrate, no gap is generated between the underlayer and the surface of the ... | 11/18/2008 |
| 7312133 | Method of manufacturing semiconductor device A method of manufacturing a lateral trench-type MOSFET exhibiting a high breakdown voltage and including an offset drain region around a trench. Specifically, impurity ions are irradiated obliquely to the side wall of a trench to implant the impurity ions only into ... | 12/25/2007 |
| 7226874 | Substrate processing method A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-exci... | 06/05/2007 |
| 7214597 | Electronic components and method of fabricating the same A method is provided for fabricating integrated electronic components. According to the method, an initial structure is produced on the surface of a first substrate. This initial structure incorporates a defined pattern formed from volumes of differentiated material... | 05/08/2007 |
| 7194197 | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible. ... | 03/20/2007 |
| 7182122 | Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus A heating and cooling apparatus with which batch processing is possible and throughput can be increased, and furthermore which is more compact and uses less energy. A substrate heating chamber and a substrate cooling chamber each capable of simultaneously holding a ... | 02/27/2007 |
| 7163877 | Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxyge... | 01/16/2007 |
| 7129151 | Planarizing method employing hydrogenated silicon nitride planarizing stop layer A planarizing method for forming a patterned planarized aperture fill layer within an aperture employs a planarizing stop layer formed of a reductant based material, such as but not limited to a hydrogenated silicon nitride material. The reductant based material pro... | 10/31/2006 |
| 7125811 | Oxidation method for semiconductor process An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the pr... | 10/24/2006 |
| 7115446 | Flip chip bonding method for enhancing adhesion force in flip chip packaging process and metal layer-built structure of substrate for the same A flip chip bonding method and substrate architecture are disclosed for enhancing bonding performance between a chip and a substrate by forming a bump on the chip or the substrate. The flip chip bonding method includes performing pretreatment of a wafer having chips... | 10/03/2006 |
| 7060595 | Circuit substrate and fabrication method thereof A circuit substrate includes a board, a plurality of metal layers and an insulator. The board has a plurality of conductive traces layers and a via formed therein. The metal layers are formed on the inner wall of the via and each of the metal layers is electrically ... | 06/13/2006 |
| 7052976 | Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure A method and system for cutting a wafer comprising a conductive substrate attached to an array of integrated devices includes placing the wafer on a stage such as a movable X-Y stage including a vacuum chuck having a porous mounting surface, and securing the wafer d... | 05/30/2006 |
| 7049202 | Method of manufacturing semiconductor device A method of manufacturing a lateral trench-type MOSFET exhibiting a high breakdown voltage and including an offset drain region around a trench. Specifically, impurity ions are irradiated obliquely to the side wall of a trench to implant the impurity ions only into ... | 05/23/2006 |
| 6967383 | Transistor with nitrogen-hardened gate oxide The present invention provides an improved surface P-channel transistor and a method of making the same. A preferred embodiment of the method of the present invention includes providing a semiconductor substrate, forming a gate oxide layer over the semiconductor sub... | 11/22/2005 |
| 6959029 | Apparatus for performing anastomosis A wide-slit lateral growth projection mask, projection system, and corresponding crystallization process are provided. The mask includes an opaque region with at least one a transparent slit in the opaque region. The slit has a width in the range of 10X to 50X micro... | 10/25/2005 |
| 6946029 | Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semic... | 09/20/2005 |
| 6946358 | Method of fabricating shallow trench isolation by ultra-thin SIMOX processing The present invention provides a cost effective and simple method of forming isolation regions, such as shallow trench isolation regions, in a semiconductor substrate that avoids etching into the trench. In the present invention, the isolation regions are formed by ... | 09/20/2005 |
| 6943096 | Semiconductor component and method of manufacture A semiconductor component having a metallization system that includes a multi-metal seed layer and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a lower level interconnect. A hardmask is formed over the dielect... | 09/13/2005 |
| 6938638 | Gas circulating-processing apparatus A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from... | 09/06/2005 |
| 6925616 | Method to test power distribution system A method for testing a core power distribution system for an integrated circuit chip which includes arranging a plurality of experiments for an integrated circuit chip, performing the plurality of experiments for the integrated circuit chip over a range of frequenci... | 08/02/2005 |
| 6916509 | Conveyor device and film formation apparatus for a flexible substrate With a conventional cylindrical can method, a region used as a film formation ground electrode is a portion of the cylindrical can, and an apparatus becomes larger in size in proportion to the surface area of the electrode. A conveyor device and a film formation app... | 07/12/2005 |
| 6917108 | Reliable low-k interconnect structure with hybrid dielectric An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of ... | 07/12/2005 |
| 6897118 | Method of multiple pulse laser annealing to activate ultra-shallow junctions A method for forming a highly activated ultra shallow ion implanted semiconductive elements for use in sub-tenth micron MOSFET technology is described. A key feature of the method is the ability to activate the implanted impurity to a highly active state without per... | 05/24/2005 |
| 6881986 | Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products A novel structure for a photodiode is disclosed. It is comprised of a p-type region, which can be a p-substrate or p-well, extending to the surface of a semiconductor substrate. A multiplicity of parallel finger-like n-wells is formed in the p-type region. The finge... | 04/19/2005 |
| 6787451 | Semiconductor device and manufacturing method thereof In a method for manufacturing an FET having a gate insulation film with an SiO2 equivalent thickness of 2 nm or more and capable of suppressing the leak current to {fraction (1/100)} or less compared with existent SiO2 films, an SiO2 | 09/07/2004 |
| 6774018 | Barrier coatings produced by atmospheric glow discharge A plasma is produced in a treatment space by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes separated by a dielectric material, a vapor precursor is mixed with the plasma, and a substrate mate... | 08/10/2004 |
| 6709956 | Transistor and method of making the same The present invention provides an improved surface P-channel transistor and a method of making the same. A preferred embodiment of the method of the present invention includes providing a semiconductor substrate, forming a gate oxide layer over the semiconductor sub... | 03/23/2004 |
| 6667240 | Method and apparatus for forming deposited film A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wh... | 12/23/2003 |
| 6600173 | Low temperature semiconductor layering and three-dimensional electronic circuits using the layering In a method for forming a three dimensional interconnected structure, sets of devices on receiver and donor semiconductor substrates. The donor substrate is implanted with two or more exfoliating implants, the substrates are bonded together to form a bond... | 07/29/2003 |
| 6541377 | Method and apparatus for preparing polysilicon granules The present invention relates to a method and an apparatus for preparing polysilicon, more specifically to a method and an apparatus for preparing polysilicon in granule form by equipping a fluidized bed reactor with a nozzle that provides an etching gas ... | 04/01/2003 |
| 6528396 | Transistor and method of making the same The present invention provides an improved surface P-channel transistor and a method of making the same. A preferred embodiment of the method of the present invention includes providing a semiconductor substrate, forming a gate oxide layer over the semico... | 03/04/2003 |
| 6514837 | High density plasma chemical vapor deposition apparatus and gap filling method using the same A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at i... | 02/04/2003 |
| 6509275 | Method of manufacturing thin film and pretreating method thereof In pre-treating a surface of a substrate in a process of forming a narrowed thin film pattern on the surface of the substrate from a solution such as a plating liquid, a mask with an opening corresponding to the thin film pattern to be formed later is for... | 01/21/2003 |
| 6506666 | Method of fabricating an SrRuO3 film A method of fabricating an SrRuO3 thin film is disclosed. The method utilizes a multi-step deposition process for the separate control of the Ru reagent, relative to the Sr reagent, which requires a much lower deposition temperature than the Sr... | 01/14/2003 |
| 6492248 | Few-particle-induced low-pressure TEOS process A few-particle-induced low-pressure TEOS process is disclosed. First, a lot of semiconductor substrates are arranged on a boat and transferred into a TEOS reactor. Silicon oxide films are then deposited on the semiconductor substrates by performing a low-... | 12/10/2002 |
| 6488995 | Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby Disclosed herein is a method of forming a microcrystalline silicon film by using a raw gas containing at least a silicon compound by a high-frequency plasma CVD method, wherein the formation of the film is conducted in such a manner that the residence tim... | 12/03/2002 |
| 6468883 | Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections Methods of forming contact openings, making electrical interconnections, and related integrated circuitry are described. Integrated circuitry formed through one or more of the inventive methodologies is also described. In one implementation, a conductive ... | 10/22/2002 |
| 6436797 | Apparatus and method for forming a deposited film on a substrate A film-forming apparatus for forming a non-single crystalline silicon series semiconductor film on a substrate in a film-forming space provided in a vacuum chamber using a very high frequency power supplied through a high frequency power supply means comp... | 08/20/2002 |
