Bizarre Patents
Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 8110425 | Laser liftoff structure and related methods Light-emitting devices, and related components, systems, and methods associated therewith are provided. ... | 02/07/2012 |
| 8088637 | Method of manufacturing a semiconductor device including a superlattice strain relief layer A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and... | 01/03/2012 |
| 8071409 | Fabrication method of light emitting diode A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer incl... | 12/06/2011 |
| 8053264 | Photoelectrochemical etching of P-type semiconductor heterostructures A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the ... | 11/08/2011 |
| 8048701 | Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating th... | 11/01/2011 |
| 8048702 | Method of fabricating nitride-based semiconductor optical device In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-b... | 11/01/2011 |
| 8048703 | Light emitting devices with inhomogeneous quantum well active regions A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer. ... | 11/01/2011 |
| 8030110 | Nitride semiconductor light-emitting device and method for fabrication thereof A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 | 10/04/2011 |
| 8003421 | Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of t... | 08/23/2011 |
| 7998773 | Method of growing semiconductor heterostructures based on gallium nitride The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers... | 08/16/2011 |
| 7981713 | Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the same A group III-V nitride-based semiconductor substrate has: a first layer made of GaN single crystal; and a second layer formed on the first layer, the second layer made of group III-V nitride-based semiconductor single crystal represented by AlxGa1-x | 07/19/2011 |
| 7981712 | Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of... | 07/19/2011 |
| 7977134 | Nitride-based semiconductor light emitting diode and method of manufacturing the same A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor... | 07/12/2011 |
| 7968361 | GaN based semiconductor light emitting device and lamp A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based ... | 06/28/2011 |
| 7968362 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 06/28/2011 |
| 7968363 | Manufacture method for ZnO based semiconductor crystal and light emitting device using same A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the ... | 06/28/2011 |
| 7955882 | Method of radiation generation and manipulation A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma waves are generated in the carrier gas using a laser pulse. The frequency... | 06/07/2011 |
| 7951633 | Light emitting diode and method of making the same A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology... | 05/31/2011 |
| 7906357 | P-type layer for a III-nitride light emitting device A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure... | 03/15/2011 |
| 7906358 | Epitaxial growth of cubic crystalline semiconductor alloys on basal plane of trigonal or hexagonal crystal Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to under... | 03/15/2011 |
| 7897423 | Method for production of a radiation-emitting semiconductor chip A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, ... | 03/01/2011 |
| 7892874 | Nitride-based light-emitting device and method of manufacturing the same A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a sin... | 02/22/2011 |
| 7888154 | Optical semiconductor device and manufacturing method therefor To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer ... | 02/15/2011 |
| 7871845 | Nitride-based semiconductor light emitting device and method of manufacturing the same Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrific... | 01/18/2011 |
| 7867803 | Method of fabricating light emitting device and compound semiconductor wafer and light emitting device A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section 24, composed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrate 1 by Metal Organic Vapor Phase Epitaxy, and a Hydride Vapor ... | 01/11/2011 |
| 7858419 | Gallium nitride-based compound semiconductor multilayer structure and production method thereof An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emis... | 12/28/2010 |
| 7842531 | Gallium nitride-based device and method A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type I... | 11/30/2010 |
| 7842532 | Nitride semiconductor device and method for manufacturing the same A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; ... | 11/30/2010 |
| 7838317 | Vertical nitride semiconductor light emitting diode and method of manufacturing the same A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an ... | 11/23/2010 |
| 7816163 | Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body bei... | 10/19/2010 |
| 7781248 | Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured using the method There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect o... | 08/24/2010 |
| 7781247 | Method for producing Group III-Group V vertical light-emitting diodes A method of producing one or more vertical light-emitting diode (VLED) dies having a light-emitting diode (LED) stack comprising Group III-Group V combinations of elements (e.g., GaN, AlN, InN, AlGaN, InGaN, and InAlGaN) and a metal substrate is provided. The techni... | 08/24/2010 |
| 7763486 | Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivat... | 07/27/2010 |
| 7754515 | Compound semiconductor and method for producing same A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InxGayAlzN (wherein x+y+z=1, 0 | 07/13/2010 |
| 7745246 | Method of fabricating light emitting device A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on... | 06/29/2010 |
| 7736926 | Method for manufacturing a light-emitting device with a periodic structure in an active region The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using t... | 06/15/2010 |
| 7732237 | Quantum dot based optoelectronic device and method of making same A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therei... | 06/08/2010 |
| 7713770 | Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active l... | 05/11/2010 |
| 7704771 | Light emitting device, method of manufacturing the same and monolithic light emitting diode array A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed ... | 04/27/2010 |
| 7691659 | Radiation-emitting semiconductor element and method for producing the same This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principa... | 04/06/2010 |
