Bizarre Patents
A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8110424 | Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polar... | 02/07/2012 |
| 8097481 | Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic c... | 01/17/2012 |
| 8097482 | Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering m... | 01/17/2012 |
| 8093082 | Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconduc... | 01/10/2012 |
| 8093083 | Method for manufacturing a semiconductor light emitting device In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by s... | 01/10/2012 |
| 8080437 | Blue light emitting semiconductor nanocrystal materials A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum e... | 12/20/2011 |
| 8076168 | Light-emitting device and method for producing light emitting device A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer mad... | 12/13/2011 |
| 8067257 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The ... | 11/29/2011 |
| 8053263 | Method of manufacturing semiconductor light emitting device A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing... | 11/08/2011 |
| 8048700 | Semiconductor light emitting element and manufacturing method thereof A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62 | 11/01/2011 |
| 8043879 | Semiconductor light emitting device manufacture method A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer mad... | 10/25/2011 |
| 8039283 | Nitride compound semiconductor element and method for manufacturing same The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrat... | 10/18/2011 |
| 8030109 | Semiconductor light emitting device, method of manufacturing same, and optical module A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in ... | 10/04/2011 |
| 8026119 | Method of fabricating semiconductor substrate and method of fabricating light emitting device The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor... | 09/27/2011 |
| 8026118 | Gallium nitride based compound semiconductor light-emitting device and method for manufacturing same The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a subst... | 09/27/2011 |
| 8021904 | Ohmic contacts to nitrogen polarity GaN Contacting materials and methods for forming ohmic contact to the N-face polarity surfaces of Group-III nitride based semiconductor materials, and devices fabricated using the methods. One embodiment of a light emitting diode (LED) a Group-III nitride active epitaxi... | 09/20/2011 |
| 8021905 | Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each... | 09/20/2011 |
| 8012784 | Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semicond... | 09/06/2011 |
| 7989244 | Method of manufacturing nitride-based semiconductor light-emitting device Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protecti... | 08/02/2011 |
| 7981710 | Light emitting device and manufacturing method A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor l... | 07/19/2011 |
| 7981711 | Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-2... | 07/19/2011 |
| 7977133 | Method of fabricating vertical structure compound semiconductor devices A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a me... | 07/12/2011 |
| 7968360 | Method of producing nitride semiconductor light-emitting device using a surfactant material In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer (105) held between an n-type nitride semiconductor layer (103, 104) and a p-type nitride semiconductor layer (106 to 108... | 06/28/2011 |
| 7955881 | Method of fabricating quantum well structure In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a const... | 06/07/2011 |
| 7951632 | Optical device and method of making An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing... | 05/31/2011 |
| 7947521 | Method for forming electrode for group-III nitride compound semiconductor light-emitting devices A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first elec... | 05/24/2011 |
| 7939354 | Method of fabricating nitride semiconductor laser A method of fabricating a nitride semiconductor laser comprises preparing a substrate having a plurality of marker structures and a crystalline mass made of a hexagonal gallium nitride semiconductor. The primary and back surfaces of the substrate intersect with a pr... | 05/10/2011 |
| 7932114 | Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer Assuming that r (m) represents the radius of a GaN substrate, t1 (m) represents the thickness of the GaN substrate, h1 (m) represents a warp of the GaN substrate before formation of an epitaxialwafer, t2 (m) represents the thickness of an Al | 04/26/2011 |
| 7927901 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 04/19/2011 |
| 7892873 | Fabrication method of nitride-based semiconductor device A fabrication method of a nitride-based semiconductor device includes the steps of forming a stacked structure constituted of a nitride-based semiconductor on a support substrate, depositing a first bonding metal on the stacked structure, depositing a second bonding... | 02/22/2011 |
| 7883915 | Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw m... | 02/08/2011 |
| 7883914 | Method for fabricating a photonic crystal or photonic bandgap vertical-cavity surface-emitting laser The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables... | 02/08/2011 |
| RE42074 | Manufacturing method of light emitting device A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active laye... | 01/25/2011 |
| 7871843 | Method of preparing light emitting device The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light e... | 01/18/2011 |
| 7867799 | MBE growth of a semiconductor laser diode A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guid... | 01/11/2011 |
| 7867801 | Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is d... | 01/11/2011 |
| 7867802 | Diamond LED devices and associated methods LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially sin... | 01/11/2011 |
| 7867800 | Light-emitting semiconductor device using group III nitrogen compound A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga | 01/11/2011 |
| 7858418 | Light emitting device and method of manufacturing the same Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction ty... | 12/28/2010 |
| 7851243 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The ... | 12/14/2010 |
