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A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.
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| Number | Title | Issue Date |
| 8187951 | CVD flowable gap fill Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate und... | 05/29/2012 |
| 7863153 | System and method for creating different field oxide profiles in a locos process An efficient method is disclosed for creating different field oxide profiles in a local oxidation of silicon process (LOCOS process). The method comprises (1) forming a first portion of the field oxide with a first field oxide profile (e.g., an abrupt bird's beak pr... | 01/04/2011 |
| 7629227 | CVD flowable gap fill Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate und... | 12/08/2009 |
| 7615461 | Method for forming shallow trench isolation of semiconductor device A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a predetermined thickness of the semiconductor substrate using the nitri... | 11/10/2009 |
| 7405461 | Semiconductor device and method for manufacturing semiconductor device A highly reliable semiconductor device that controls both defects and impurity diffusion and a method for manufacturing such a semiconductor device. An N+ embedment layer and an N-type epitaxial layer are formed on a main surface region of a P-type silico... | 07/29/2008 |
| 7358554 | Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane st... | 04/15/2008 |
| 7323420 | Method for manufacturing multi-thickness gate dielectric layer of semiconductor device In a method for manufacturing a multi-thickness gate dielectric layer of a semiconductor device, a first dielectric layer is formed on a semiconductor substrate. A second dielectric layer is formed using a different dielectric material from the material constituting... | 01/29/2008 |
| 7303973 | ALD process for capacitor dielectric Provided is a method for manufacturing a semiconductor device, including a dual-stage deposition step including: a first stage for introducing tantalum penta-ethoxide containing tantalum as a material gas into a reaction chamber in which a semiconductor substrate on... | 12/04/2007 |
| 7259055 | Method of forming high-luminescence silicon electroluminescence device A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of ... | 08/21/2007 |
| 7250351 | Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistors Enhanced silicon-on-insulator transistors and methods are provided for implementing enhanced silicon-on-insulator transistors. The enhanced silicon-on-insulator (SOI) transistors include a thin buried oxide (BOX) layer under a device channel and a thick self-aligned... | 07/31/2007 |
| 7235498 | Process for growing a dielectric layer on a silicon-containing surface using a mixture of NO and O This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance gr... | 06/26/2007 |
| 7211523 | Method for forming field oxide A method for forming a field oxide is disclosed. In one embodiment, the method comprises providing a semiconductor structure having a substrate, a pad oxide, and a patterned barrier layer, performing a dry oxidation process to form a first field oxide on the substra... | 05/01/2007 |
| 7205217 | Method for forming trench gate dielectric layer A method for forming a trench gate dielectric layer is described. First, a substrate having a trench therein is provided. An in-situ steam generated oxidation process is performed to form a sacrificial layer on the surface of the trench. Then, the sacrificial layer ... | 04/17/2007 |
| 7193277 | Application of different isolation schemes for logic and embedded memory The present invention facilitates semiconductor device fabrication by providing mechanisms for utilizing different isolation schemes within embedded memory and other logic portions of a device. The isolation mechanism of the embedded memory portion is improved relat... | 03/20/2007 |
| 7164195 | Semiconductor device and semiconductor device manufacturing method In a semiconductor device including a semiconductor wafer having a first main surface where a circuit element is formed, electrode pads are formed at an upper portion of the first main surface of the semiconductor wafer electrically connected with the circuit elemen... | 01/16/2007 |
| 7064052 | Method of processing a transistor gate dielectric film with stem A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrat... | 06/20/2006 |
| 7053007 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vic... | 05/30/2006 |
| 7023751 | Method and circuit for reducing DRAM refresh power by reducing access transistor sub threshold leakage The required refresh rate of a DRAM is reduced by biasing active digit lines to a slight positive voltage to reduce the sub threshold current leakage of access transistors in memory cells that are not being accessed. The slight positive voltage is provided by a volt... | 04/04/2006 |
| 7008880 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vic... | 03/07/2006 |
| 6946305 | Apparatus for evaluating amount of charge, method for fabricating the same, and method for evaluating amount of charge A wafer for charge amount evaluation having a silicon substrate and p-type regions sandwiched between a first silicon oxide film and a SA-NSG film and surrounded by an undoped silicon film is prepared and subjected to a target process for which an amount of charge i... | 09/20/2005 |
| 6943088 | Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating different types of liner oxides and thus different types of corner roun... | 09/13/2005 |
| 6929991 | Reliable semiconductor device and method of manufacturing the same The present invention provides a semiconductor device and a method of manufacturing the same improved in reliability of a gate insulating film by increasing a total charge amount Qbd by suppressing a film stress of a gate electrode formed of a polysilicon film, to a... | 08/16/2005 |
| 6835634 | Streamlined field isolation process A field isolation process performed on a silicon wafer is carried out by high pressure oxidation. Using oxygen rather than water vapor as the oxidant substantially eliminates nitride inclusions via the Kooi effect. Preferred high pressure field oxidation processes s... | 12/28/2004 |
| RE38674 | Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is... | 12/21/2004 |
| 6818495 | Method for forming high purity silicon oxide field oxide isolation region A method for forming within a silicon semiconductor substrate employed within a microelectronics fabrication a silicon oxide dielectric layer. There is provided a silicon semiconductor substrate. There is formed upon the silicon semiconductor substrate a blanket sil... | 11/16/2004 |
| 6764920 | Method for reducing shallow trench isolation edge thinning on tunnel oxides using partial nitride strip and small bird's beak formation for high performance flash memory devices A method of semiconductor integrated circuit fabrication. Specifically, one embodiment of the present invention discloses a method for reducing shallow trench isolation (STI) corner recess of silicon in order to reduce STI edge thinning on tunnel oxides (510)... | 07/20/2004 |
| 6746925 | High-k dielectric bird's beak optimizations using in-situ O2 plasma oxidation In a method of forming an integrated circuit device, sidewall oxides are formed by plasma oxidation on the patterned gate. This controls encroachment beneath a dielectric layer underlying the patterned gate. The patterned gate is oxidized using in-situ O2 | 06/08/2004 |
| 6746908 | Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device A temperature control method is provided which is capable of performing quick, accurate, and error-free soaking control over all wafer areas to be thermally treated at a target temperature without requiring any skilled operator and which can be automated by using a ... | 06/08/2004 |
| 6727161 | Isolation technology for submicron semiconductor devices A process for making a semiconductor structure, includes forming a second dielectric layer on exposed regions of an intermediate structure. The intermediate structure includes: a semiconductor substrate having the regions, a first dielectric layer on at least a firs... | 04/27/2004 |
| 6723615 | Semiconductor device and method of fabricating the same A highly reliable semiconductor device capable of preventing generation of a leakage current is provided. The semiconductor device comprises a silicon substrate having a main surface and including a trench formed on the main surface. The trench is defined by surface... | 04/20/2004 |
| 6706616 | Method for improving thermal process steps A method for controlling temperature of a semiconductor wafer in a process chamber includes heating the chamber from a starting temperature to a stabilizing temperature at a heating rate of approximately 12 degrees Celsius per second and maintaining the chamber at t... | 03/16/2004 |
| 6696351 | Semiconductor device having a selectively deposited conductive layer A process of production of a semiconductor memory device having a memory array including memory cells and a peripheral circuit on one substrate comprising the process of forming an interlayer insulating layer covering the memory array and peripheral circu... | 02/24/2004 |
| 6645827 | Method for forming isolation regions on semiconductor device A method for forming isolation regions on a semiconductor substrate, includes partially covering the surface of the semiconductor substrate with oxidation inhabiting films, and heat-treating the portions of the semiconductor substrate which are exposed fr... | 11/11/2003 |
| 6639228 | Method for molecular nitrogen implantation dosage monitoring A method for estimating molecular nitrogen implantation dosage. The semiconductor wafers are first implanted with various concentration of molecular nitrogen. After implantation, the implanted wafers and a non-implanted wafer are subjected to thermal proc... | 10/28/2003 |
| 6610581 | Method of forming isolation film in semiconductor device There is disclosed a method of forming an isolation film in a semiconductor device, the method including the steps of: forming a silicon oxide film and a silicon nitride film in that order on a silicon substrate, using a resist pattern as a mask, etching ... | 08/26/2003 |
| 6579769 | Semiconductor device manufacturing method including forming FOX with dual oxidation In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor subs... | 06/17/2003 |
| 6534388 | Method to reduce variation in LDD series resistance A process used to retard out diffusion of P type dopants from P type LDD regions, resulting in unwanted LDD series resistance increases, has been developed. The process features the formation of a nitrogen containing layer, placed between the P type LDD r... | 03/18/2003 |
| 6528390 | Process for fabricating a non-volatile memory device A method for fabricating a semiconductor structure includes growing regions of oxide on a first structure, to form bit-line regions; wherein said semiconductor structure includes a semiconducting substrate, a patterned ONO layer on said substrate, wherein... | 03/04/2003 |
| 6503815 | Method for reducing stress and encroachment of sidewall oxide layer of shallow trench isolation The invention utilizes introductions of oxygen and hydroxyl to perform an in situ steam generated process to reoxidize a conventional sidewall oxide layer and density the oxide in a shallow trench isolation. The ISSG process renders the conventional sidew... | 01/07/2003 |
| 6495431 | Semiconductor device and method for manufacturing the same that includes a dual oxidation A first field oxidation is performed by masking an element-isolating region formation-expected region on a substrate by a first oxidation preventing film (silicon nitride film) having therein a first opening to thereby form a first field oxide film, which... | 12/17/2002 |
